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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1405ZSTRRPBF

Name: IRF1405ZSTRRPBF
Brand: Infineon Technologies
SKU: IRF1405ZSTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1405ZSTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF1405ZSTRRPBF.pdf

Description:: MOSFET N-CH 55V 75A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF1405ZSTRRPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET in D2Pak (TO-263) package, rated for 55 V V_DSS, 4.9 mΩ R_DS(on) at V_GS = 10 V, and 75 A continuous drain current at T_C = 25°C. It features 175°C junction temperature rating, fast switching (t_r = 110 ns, t_f = 82 ns), and tested repetitive avalanche capability up to T_jmax, making it suitable for high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF1405ZSTRRPBF datasheet, IRF1405ZSTRRPBF pinout, IRF1405ZSTRRPBF application, or IRF1405ZSTRRPBF equivalent, key selection criteria include on-resistance vs. thermal derating, gate charge (Q_g = 120–180 nC), body diode recovery (Q_rr = 30–45 nC), and avalanche energy rating (E_AS = 150 mJ).

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction loss per unit area while maintaining robust safe operating area (SOA) across pulse widths from 10 µs to 10 ms. Its low R_DS(on) and high ID capability are enabled by optimized cell pitch and trench geometry, supporting high-efficiency synchronous rectification in 12 V/48 V industrial power supplies.

The device integrates a fast, low-V_SD (≤1.3 V) body diode with trr = 30–46 ns and Q_rr = 30–45 nC, enabling reliable operation in hard-switched topologies without external anti-parallel diodes. Thermal performance is characterized by R_θJC = 0.65 °C/W and R_θJA = 40 °C/W (PCB mount), supporting high-power density designs when mounted on thermally enhanced copper pads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; defines use in ≤48 V bus systems with margin.
R_DS(on)	4.9 mΩ max @ V_GS = 10 V, T_J = 25°C - Enables <1 W conduction loss at 75 A, critical for thermal management.
I_D (cont)	75 A @ T_C = 25°C - Sustains high-load motor drive or battery charging currents with minimal heatsinking.
Q_g	120–180 nC - Determines gate driver strength requirement; impacts switching loss in 100–500 kHz SMPS.
E_AS	150 mJ (tested) - Supports unclamped inductive switching in relay drivers or solenoid controls without failure.
T_J max	175°C - Allows operation in sealed enclosures or high-ambient environments without derating below 125°C.
Q_rr	30–45 nC - Quantifies reverse recovery charge during commutation; directly affects shoot-through risk in bridge legs.

Pinout & Package

IRF1405ZSTRRPBF uses the surface-mount D2Pak (TO-263) package with three terminals: Drain (tab), Source (pins 1 & 2), and Gate (pin 3). The exposed drain tab provides low-inductance, high-current path and serves as primary thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-current output terminal	Electrically and thermally connected to PCB copper pour; must be soldered to ≥100 mm² 2 oz Cu for R_θJC compliance.
Source (Pins 1 & 2)	Reference node for gate drive and current return	Parallel pins reduce source inductance (L_S = 7.5 nH); critical for minimizing V_GS ringing during fast switching.
Gate (Pin 3)	Control input for channel modulation	High-impedance node requiring low-inductance gate loop; sensitive to noise due to V_GS(th) = 2.0–4.0 V.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.9 mΩ enables ≤0.5% efficiency loss in 75 A load paths at 12 V input, reducing heatsink volume by >40% vs. 8 mΩ alternatives.
Repetitive avalanche rating	Tested to 150 mJ single-pulse and validated for repetitive operation up to T_jmax, eliminating need for external snubbers in inductive load switching.
Fast body diode	Q_rr = 30–45 nC and trr = 30–46 ns allow clean commutation in synchronous buck converters without cross-conduction penalties.
175°C junction rating	Supports full 75 A current delivery at case temperatures up to 100°C, enabling compact designs in fanless industrial controllers.

Applications

Motor Drive Half-Bridge

High-Current DC-DC Converter

Use Scenario: Driving brushed DC motors in automated guided vehicles with 48 V bus and peak loads of 60 A.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology; handles PWM at 20 kHz with 95% duty cycle.

Use Value: 4.9 mΩ R_DS(on) limits conduction loss to 17.6 W at 60 A, enabling natural convection cooling instead of forced air.

Use Scenario: Output synchronous rectifier in 48 V → 12 V, 600 W telecom power supply.

IC Role / Device Role / Timing Role: Secondary-side power switch synchronized to primary-side controller; operates at 300 kHz.

Use Value: Low Q_g (120–180 nC) and fast t_f (82 ns) reduce gate drive loss and dead-time penalty, improving efficiency by 0.8% over TO-220 equivalents.

Industrial Solenoid Driver

UPS Inverter Stage

Use Scenario: Controlling 24 V, 30 A solenoid valves in factory automation PLC I/O modules.

IC Role / Device Role / Timing Role: Unclamped inductive switch; subjected to repeated 100 µs turn-off events with L·di/dt = 500 V/µs.

Use Value: Validated 150 mJ E_AS withstands worst-case energy without clamping circuitry, reducing BOM count by two TVS diodes per channel.

Use Scenario: High-side switch in three-phase 400 V line-interactive UPS inverter with 10 kVA output.

IC Role / Device Role / Timing Role: N-channel MOSFET in leg configuration; switched at 16 kHz with 175°C thermal limit.

Use Value: 175°C T_jmax allows sustained 75 A operation under overload conditions, extending system hold-up time during grid failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	R_DS(on) = 7.5 mΩ @ 10 V; Q_g = 125 nC; TO-220 package	Higher conduction loss (+51%) and lower thermal conductivity (R_θJC = 1.0 °C/W) limit current to 55 A at same T_C	Select when cost sensitivity outweighs efficiency and board space constraints.
IXTP75N055T	R_DS(on) = 5.5 mΩ @ 10 V; Q_g = 105 nC; TO-220 package; 150°C T_jmax	Limited to 150°C junction, requiring earlier thermal derating above 85°C ambient; no tested avalanche rating	Select when gate drive power minimization is critical and avalanche stress is absent.

Compared with STP75NF75 and IXTP75N055T, IRF1405ZSTRRPBF delivers superior thermal performance via D2Pak mounting and verified avalanche robustness-key for inductive load reliability-while maintaining competitive gate charge for high-frequency operation.

Availability

IRF1405ZSTRRPBF is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and high-current DC-DC converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF1405ZSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial motor control, renewable energy inverters, and server power supplies.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF1405ZSTRRPBF supports 270 A pulsed drain current (I_DM) but its continuous drain current at T_C = 100°C is 230 A, as specified in the Absolute Maximum Ratings table. This value assumes proper PCB thermal design with ≥100 mm² 2 oz copper and no airflow restriction.

Does this MOSFET require a gate resistor for stability?

Yes-a gate resistor of 4.4 Ω is used in the official switching characterization (per datasheet Fig. 18a), and typical designs employ 2.2–10 Ω to dampen V_GS ringing caused by L_S = 7.5 nH and Q_gd = 46 nC. Omitting it risks oscillation during turn-on due to Miller effect.

Can IRF1405ZSTRRPBF replace IRF1404 in existing designs?

Yes, with verification: both share D2Pak package and 55 V rating, but IRF1405ZSTRRPBF has 4.9 mΩ R_DS(on) vs. 5.6 mΩ for IRF1404, yielding ~12% lower conduction loss. Thermal and gate drive circuits remain compatible, though layout should confirm gate loop inductance remains ≤5 nH.

Is the body diode suitable for synchronous rectification?

Yes-the body diode is characterized with V_SD ≤ 1.3 V at 75 A and Q_rr = 30–45 nC, enabling use in synchronous buck converters up to 300 kHz. However, its reverse recovery is not soft; external Schottky clamping may be needed in high-di/dt (>100 A/µs) applications.

IRF1405ZSTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 180 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4780 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF1405ZSTRRPBF FAQ

1.How can I place an order for IRF1405ZSTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1405ZSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1405ZSTRRPBF reliable?

The price and inventory of IRF1405ZSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1405ZSTRRPBF is usually 5 days.

3.What payment methods are accepted for IRF1405ZSTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1405ZSTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1405ZSTRRPBF?

IRF1405ZSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1405ZSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1405ZSTRRPBF?

For technical support, including IRF1405ZSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1405ZSTRRPBF requirements.

6.How does Aetrix verify that IRF1405ZSTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF1405ZSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1405ZSTRRPBF meets industry standards.

7.What is the process for return or replacement of IRF1405ZSTRRPBF?

All IRF1405ZSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1405ZSTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1405ZSTRRPBF part is unused and in its original packaging.

Return procedure for IRF1405ZSTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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