Infineon Technologies IRF1407L

Overview

IRF1407L from Infineon Technologies (formerly International Rectifier) is a through-hole N-channel enhancement-mode HEXFET® Power MOSFET rated for 75 V V_DS, 0.0078 Ω R_DS(on) at V_GS = 10 V, and 100 A continuous drain current at T_C = 25°C. It serves as a high-efficiency main or synchronous rectifier switch in DC-DC converters, motor drives, and UPS systems where low conduction loss and rugged avalanche capability are critical.

For engineers reviewing the IRF1407L datasheet, IRF1407L pinout, IRF1407L application, or IRF1407L equivalent, key selection criteria include its TO-262 (I²PAK) package thermal performance, 390 mJ single-pulse avalanche energy rating, 175°C maximum junction temperature, and body diode recovery characteristics (t_rr = 110–170 ns, Q_rr = 390–590 nC).

Technical Context

This device employs advanced silicon processing to achieve ultra-low on-resistance per die area while maintaining fast switching (t_d(on) = 11 ns, t_r = 150 ns) and robust unclamped inductive switching capability. Its gate threshold voltage (2.0–4.0 V) and transconductance (74 S) support stable operation across industrial temperature ranges.

The integrated body diode exhibits low forward voltage (V_SD = 1.3 V at I_S = 78 A, T_J = 25°C) and controlled reverse recovery behavior, enabling use in freewheeling and synchronous rectification roles without external diode supplementation in many medium-frequency power topologies.

Key Specifications

Pinout & Package

The IRF1407L uses the TO-262 (I²PAK) through-hole package with 3 leads: Gate (G), Drain (D), and Source (S). The package features low-profile mounting height and high thermal conductivity via direct case-to-heatsink contact.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP100N75F7 and IXTH100N075L2, the IRF1407L delivers optimal balance of low R_DS(on), TO-262 thermal performance (R_θJC = 0.75°C/W), and cost-effective manufacturability for mid-power industrial systems requiring 70–100 A switching.

Availability

IRF1407L is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, uninterruptible power supplies, and industrial battery chargers requiring stable component supply and long-term production continuity.

Supply support for IRF1407L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

The IRF1407L belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-current, high-reliability industrial switching applications demanding low on-resistance, rugged avalanche tolerance, and extended temperature operation.

FAQ

What is the maximum continuous drain current for IRF1407L at 100°C case temperature?

The IRF1407L supports 70 A continuous drain current at T_C = 100°C, derived from its 100 A rating at 25°C and linear derating factor of 1.3 W/°C. This value reflects thermal limitation of the TO-262 package, not silicon capability, and assumes proper heatsinking per Infineon's recommended footprint in AN-994.

Does IRF1407L require a gate driver IC for 100 A switching applications?

Yes - with total gate charge of 160–250 nC and typical gate resistance of 2.5 Ω in switching tests, driving IRF1407L at >100 kHz requires a dedicated gate driver (e.g., IR2110 or MIC442x) capable of ≥2 A peak source/sink current to minimize switching losses and prevent shoot-through in bridge configurations.

Can IRF1407L replace IRF1404 in an existing design?

Yes, with verified benefits: IRF1407L offers 75 V V_DS (vs. 40 V for IRF1404) and 0.0078 Ω R_DS(on) (vs. 0.028 Ω), enabling higher bus voltage operation and ~72% lower conduction loss at 78 A. Layout compatibility is maintained as both use TO-262, but gate drive timing and avalanche margin must be revalidated.

Is the body diode in IRF1407L suitable for synchronous rectification?

It is usable but suboptimal: V_SD = 1.3 V and Q_rr = 390–590 nC result in higher conduction and switching losses than discrete Schottky or GaN-based synchronous rectifiers. For >200 kHz designs or efficiency-critical applications, external low-V_F diodes or dedicated SR controllers are recommended.