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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1407S

Name: IRF1407S
Brand: Infineon Technologies
SKU: IRF1407S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1407S

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF1407S.pdf

Description:: MOSFET N-CH 75V 100A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF1407S from Infineon Technologies (formerly International Rectifier) is a 75V, 100A N-channel D2Pak surface-mount power MOSFET with 7.8 mΩ R_DS(on) at V_GS = 10 V, rated for continuous operation up to 175°C junction temperature and capable of 520 A pulsed drain current. It integrates a robust body diode with 110–170 ns reverse recovery time and supports unclamped inductive switching with 390 mJ single-pulse avalanche energy.

For engineers reviewing the IRF1407S datasheet, IRF1407S pinout, IRF1407S application, or IRF1407S equivalent, key selection criteria include its ultra-low on-resistance in D2Pak packaging, thermal derating capability (1.3 W/°C), fast switching performance (11 ns turn-on delay, 150 ns rise time), and validated repetitive avalanche operation up to T_jmax.

Technical Context

This HEXFET® device employs advanced silicon processing to minimize conduction losses while maintaining high dv/dt immunity (4.6 V/ns) and rugged unclamped inductive switching behavior. Its gate charge profile (160–250 nC total, 54–81 nC Q_gd) enables efficient hard-switching in high-frequency DC-DC converters and motor drives.

The D2Pak package delivers 0.75 °C/W junction-to-case thermal resistance and supports 200 W steady-state power dissipation at T_C = 25°C. Internal source and drain inductances (L_S = 7.5 nH, L_D = 4.5 nH) are characterized to support accurate layout-dependent switching loss modeling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Maximum blocking voltage before avalanche; defines usable bus voltage range in 48 V systems.
R_DS(on)	7.8 mΩ @ V_GS = 10 V, I_D = 78 A - Enables <1 W conduction loss at 100 A, critical for high-current synchronous rectification.
I_D (T_C = 25°C)	100 A - Continuous current rating limited by package thermal capacity, not silicon.
E_AS	390 mJ - Single-pulse avalanche energy at T_J = 25°C; supports reliable operation under inductive load turn-off stress.
Q_g	160–250 nC - Total gate charge determines driver strength requirement; impacts switching loss trade-off in 100–500 kHz designs.
T_J Range	–55 to +175 °C - Extended temperature rating enables use in automotive under-hood and industrial motor control environments.
trr / Q_rr	110–170 ns / 390–590 nC - Body diode recovery characteristics directly affect shoot-through risk and snubber design in half-bridge topologies.

Pinout & Package

The IRF1407S uses the D2Pak (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Package dimensions comply with JEDEC MO-211 standard.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures compatibility with 3.3 V and 5 V controllers when biased above V_GS(th).
D (Drain)	Main power output terminal	Internally connected to exposed copper pad; must be soldered to large PCB copper area for thermal management and low-inductance return path.
S (Source)	Power reference node	Provides low-impedance return for load current; internal 7.5 nH inductance affects gate drive loop stability and high-speed switching fidelity.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7.8 mΩ enables <1 W conduction loss at 100 A, reducing heatsink requirements in high-current DC-DC stages.
175°C maximum junction temperature	Supports operation in sealed enclosures or high-ambient environments without derating, extending reliability in automotive and industrial applications.
Dynamic dv/dt rating	4.6 V/ns immunity prevents false turn-on during high-slew-rate transients in bridge configurations.
Repetitive avalanche capability	Validated up to T_jmax per Fig. 15–16; allows safe operation in unclamped inductive switching without external snubbers.
Lead-free construction	RoHS-compliant Pb-free plating and halogen-free mold compound meet IPC-J-STD-020 moisture sensitivity level 3 (MSL3).

Applications

Motor Drive Inverter Stage

High-Current DC-DC Converter Primary Switch

Use Scenario: 3-phase BLDC inverter for industrial pumps operating at 48 V bus with 80 A peak phase current.

IC Role / Device Role / Timing Role: High-side and low-side N-channel switch in 6-step commutation; handles 100 A pulsed current during torque peaks.

Use Value: 7.8 mΩ R_DS(on) reduces conduction loss by >30% vs. comparable 12 mΩ devices, lowering thermal stress on PCB copper and enabling smaller heatsinks.

Use Scenario: 48 V to 12 V, 600 W isolated forward converter in telecom power supply.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 250 kHz with 78 A RMS current.

Use Value: Fast 150 ns rise time and low Q_gd/Q_g ratio minimize switching loss, improving efficiency from 92% to 94.2% at full load.

Automotive Starter Solenoid Replacement

UPS Inverter Output Stage

Use Scenario: Solid-state replacement for mechanical starter solenoid in 24 V commercial vehicle starting system.

IC Role / Device Role / Timing Role: Single-pole, high-current switch controlling 100 A cranking current for <500 ms duration.

Use Value: 520 A pulsed drain rating and 390 mJ avalanche energy ensure survival during battery voltage sag and inductive kickback without external clamping.

Use Scenario: 1 kVA online UPS delivering pure sine wave output with 120 VAC, 8.3 A RMS output.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge output stage handling bidirectional 100 A surge currents during transfer switching.

Use Value: 175°C T_J rating and 1.3 W/°C thermal derating allow sustained operation at 70°C ambient without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N75F7	75 V, 110 A, R_DS(on) = 6.5 mΩ, TO-220FP package, lower Q_g (130 nC)	Through-hole mounting only; higher R_θJA (62 °C/W) limits power density in compact layouts	Preferred where board space permits through-hole assembly and lower gate drive loss is prioritized over thermal performance.
IXFH100N075	75 V, 100 A, R_DS(on) = 7.5 mΩ, TO-247 package, higher PD (300 W)	Larger footprint and higher cost; superior thermal performance but incompatible with D2Pak PCB footprints	Selected when maximum power dissipation (>200 W) and long-term reliability under thermal cycling outweigh SMT assembly constraints.

Compared with STP110N75F7 and IXFH100N075, the IRF1407S offers optimal balance of ultra-low R_DS(on), surface-mount compatibility, and proven avalanche ruggedness-making it ideal for space-constrained, high-current industrial and automotive power stages where thermal management relies on PCB copper rather than discrete heatsinks.

Availability

IRF1407S is available at Aetrix Electronics and suitable for motor drives, high-current DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-lifecycle support.

Supply support for IRF1407S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

The IRF1407S belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial motor control, power conversion, and automotive electrification systems.

FAQ

What is the maximum continuous drain current for IRF1407S at 100°C case temperature?

The maximum continuous drain current is 70 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures, not silicon current limitation. The 100 A rating applies only at T_C = 25°C and assumes adequate PCB copper area for thermal conduction.

Does IRF1407S require a gate resistor for safe operation in hard-switching applications?

Yes-a gate resistor (typically 2.5 Ω to 10 Ω) is required to control dV/dt and di/dt during switching transitions. The datasheet specifies switching times (e.g., 150 ns rise time) using R_G = 2.5 Ω; omitting this resistor risks oscillation, excessive EMI, and gate driver overstress due to the device's 160–250 nC total gate charge and low input capacitance.

Can IRF1407S be used in synchronous rectification topologies without external Schottky diodes?

Yes-the integrated body diode has characterized reverse recovery parameters (t_rr = 110–170 ns, Q_rr = 390–590 nC) and is rated for continuous source current up to 100 A. However, for >200 kHz operation, external Schottky diodes may still be preferred to minimize recovery losses and prevent cross-conduction in tightly timed synchronous gate drives.

Is IRF1407S pin-compatible with the obsolete IRF1407LPbF through-hole variant?

No-IRF1407S uses the D2Pak (TO-263) surface-mount package with three leads (G-D-S) and an exposed drain pad, while IRF1407LPbF uses the TO-262 (I²PAK) through-hole package with bent leads and no thermal pad. Their footprints, soldering methods, and thermal interface requirements are fundamentally incompatible despite identical electrical specifications.

IRF1407S Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.8mOhm @ 78A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 250 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF1407S FAQ

1.How can I place an order for IRF1407S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1407S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1407S reliable?

The price and inventory of IRF1407S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1407S is usually 5 days.

3.What payment methods are accepted for IRF1407S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1407S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1407S?

IRF1407S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1407S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1407S?

For technical support, including IRF1407S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1407S requirements.

6.How does Aetrix verify that IRF1407S is sourced from the original manufacturer or authorized distributors?

All IRF1407S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1407S meets industry standards.

7.What is the process for return or replacement of IRF1407S?

All IRF1407S units undergo pre-shipment inspection (PSI). If there is an issue with IRF1407S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1407S part is unused and in its original packaging.

Return procedure for IRF1407S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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