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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1407STRR

Name: IRF1407STRR
Brand: Infineon Technologies
SKU: IRF1407STRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1407STRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF1407STRR.pdf

Description:: MOSFET N-CH 75V 100A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:6,861

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Product details

Overview

IRF1407STRR from Infineon Technologies is a 75V, 100A N-channel enhancement-mode HEXFET® Power MOSFET in D2Pak (TO-263) surface-mount package, featuring 7.8 mΩ R_DS(on) at V_GS = 10V, 175°C maximum junction temperature, and rated for repetitive avalanche energy up to 390 mJ - used in high-current DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IRF1407STRR datasheet, IRF1407STRR pinout, IRF1407STRR application, or IRF1407STRR equivalent, key selection criteria include its low on-resistance under high-temperature operation, fast switching performance (t_r = 150 ns, t_f = 140 ns), body diode recovery characteristics (t_rr = 110–170 ns), and thermal robustness with R_θJC = 0.75°C/W.

Technical Context

This MOSFET employs advanced silicon processing to achieve ultra-low R_DS(on) per die area while maintaining rugged unclamped inductive switching capability. Its gate charge profile (Q_g = 160–250 nC, Q_gd = 54–81 nC) supports efficient high-frequency hard-switching in synchronous rectifiers and half-bridge topologies.

The device integrates a fast, low-loss intrinsic body diode (V_SD = 1.3 V at I_S = 78 A, T_J = 25°C) with controlled reverse recovery (Q_rr = 390–590 nC, di/dt = 100 A/µs), enabling reliable operation in freewheeling and regenerative braking paths without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Maximum drain-source blocking voltage before avalanche onset; defines safe operating range in 48V bus systems.
R_DS(on)	7.8 mΩ @ V_GS = 10 V, I_D = 78 A - Enables <1 W conduction loss at 100 A, critical for high-efficiency power stages.
I_D (T_C = 25°C)	100 A - Continuous drain current rating under ideal heatsinking; limited by package thermal resistance, not silicon.
E_AS	390 mJ - Single-pulse avalanche energy at T_J = 25°C; allows safe operation during inductive turn-off transients.
t_r/t_f	150 ns / 140 ns - Rise/fall times at V_DD = 38 V, I_D = 78 A, R_G = 2.5 Ω; determines minimum practical switching frequency.
R_θJC	0.75 °C/W - Junction-to-case thermal resistance; enables 200 W power dissipation with ≤150°C case temperature rise.
Q_g	160–250 nC - Total gate charge; directly impacts driver power requirement and switching loss in PWM control.

Pinout & Package

The IRF1407STRR is housed in a D2Pak (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. The package provides low internal inductance (L_D = 4.5 nH, L_S = 7.5 nH) and supports PCB-mount power dissipation up to 200 W with proper copper area.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires 10 V for full enhancement; threshold voltage 2.0–4.0 V ensures noise immunity in noisy environments.
2 (D)	Drain	Main high-side power terminal; electrically and thermally connected to exposed copper pad; must be soldered to large PCB copper pour.
3 (S)	Source	Power return and reference node; forms common path for gate drive return and current sensing; low-inductance layout essential for stability.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7.8 mΩ at 10 V gate drive reduces conduction losses by >30% vs. legacy 75 V MOSFETs in 12–48 V systems.
Repetitive avalanche rated	Supported up to T_Jmax = 175°C; eliminates need for external clamping in inductive load switching applications.
Dynamic dv/dt rating	4.6 V/ns - Ensures immunity to false turn-on during high-speed voltage transients in bridge configurations.
High-temperature operation	Rated for continuous operation at 175°C junction temperature; maintains R_DS(on) stability across industrial ambient ranges.

Applications

Motor Drive Inverter Stage

Industrial DC-DC Converter Primary Switch

Use Scenario: High-current 3-phase BLDC motor control in HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: Low-side switching element in 6-step commutation; handles 70–100 A peak phase current with minimal thermal stress.

Use Value: 7.8 mΩ R_DS(on) limits conduction loss to <0.8 W at 100 A, reducing heatsink size and system cost.

Use Scenario: Primary-side switch in isolated 48 V to 12 V telecom DC-DC converter with 500 kHz switching.

IC Role / Device Role / Timing Role: Hard-switched N-channel MOSFET in forward or active-clamp flyback topology.

Use Value: Fast 150 ns rise time and low Q_gd/Q_g ratio enable efficient high-frequency operation with reduced Miller-induced shoot-through risk.

Uninterruptible Power Supply (UPS) Output Stage

Automotive 48 V Mild Hybrid DC-Link Switch

Use Scenario: Bidirectional power flow control in online UPS inverters supporting battery charging and grid feeding.

IC Role / Device Role / Timing Role: Synchronous rectifier and freewheeling switch; leverages body diode for reverse conduction during regeneration.

Use Value: Body diode V_SD = 1.3 V and t_rr = 110–170 ns minimize reverse recovery loss and EMI in bidirectional modes.

Use Scenario: High-side main switch in 48 V battery disconnect and load-dump protection circuits.

IC Role / Device Role / Timing Role: Load switch controlling power delivery to ADAS ECUs and infotainment subsystems.

Use Value: 390 mJ single-pulse avalanche rating withstands ISO 7637-2 pulse 5a/b load dump transients without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N75F7	75 V, 110 A, R_DS(on) = 6.5 mΩ @ 10 V; lower Q_g (135 nC) but higher C_oss (1250 pF).	Better conduction efficiency at light loads; slower dv/dt immunity (3.2 V/ns) limits use in high-noise motor drives.	Prefer when minimizing gate drive loss dominates over switching speed; verify layout for increased C_oss-induced ringing.
IXFH110N75X3	75 V, 110 A, R_DS(on) = 6.2 mΩ @ 10 V; enhanced avalanche rating (E_AS = 520 mJ); TO-247 package.	Higher thermal mass and R_θJC = 0.45°C/W support higher sustained power but require through-hole mounting.	Select for mission-critical 24/7 operation where avalanche margin and thermal headroom outweigh SMT assembly benefits.

Compared with STP110N75F7 and IXFH110N75X3, the IRF1407STRR offers optimal balance of surface-mount compatibility, 0.75°C/W thermal resistance, and proven 390 mJ avalanche capability - making it preferred for space-constrained, high-reliability industrial power modules where D2Pak footprint and thermal performance are decisive.

Availability

IRF1407STRR is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term production continuity.

Supply support for IRF1407STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF1407STRR belongs to the HEXFET® Power MOSFET product line, engineered for high-current, high-efficiency switching in industrial and automotive power conversion systems where thermal reliability and ruggedness are critical.

FAQ

What is the maximum continuous drain current for IRF1407STRR at 100°C case temperature?

The maximum continuous drain current is 70 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2Pak package and ensures junction temperature remains ≤175°C under steady-state conditions with appropriate PCB copper area and airflow.

Does IRF1407STRR support gate drive voltages below 10 V?

Yes - the gate threshold voltage is 2.0–4.0 V, so the device begins conducting at low gate voltages. However, full enhancement (R_DS(on) ≤ 7.8 mΩ) requires V_GS ≥ 10 V. Operation at 5–8 V yields significantly higher on-resistance and is only suitable for low-duty-cycle or low-current applications.

Can IRF1407STRR be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (see Fig. 4) promotes current sharing between paralleled devices. Successful implementation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink or copper plane to ensure uniform junction temperature rise.

Is the body diode in IRF1407STRR suitable for synchronous rectification?

No - while the body diode is fast (t_rr = 110–170 ns) and rated for 100 A continuous source current, its forward voltage (1.3 V) and Q_rr (390–590 nC) are higher than dedicated Schottky or GaN-based synchronous rectifiers. It is intended for freewheeling and fault protection, not primary rectification.

IRF1407STRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.8mOhm @ 78A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 250 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF1407STRR FAQ

1.How can I place an order for IRF1407STRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1407STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1407STRR reliable?

The price and inventory of IRF1407STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1407STRR is usually 5 days.

3.What payment methods are accepted for IRF1407STRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1407STRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1407STRR?

IRF1407STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1407STRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1407STRR?

For technical support, including IRF1407STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1407STRR requirements.

6.How does Aetrix verify that IRF1407STRR is sourced from the original manufacturer or authorized distributors?

All IRF1407STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1407STRR meets industry standards.

7.What is the process for return or replacement of IRF1407STRR?

All IRF1407STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF1407STRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1407STRR part is unused and in its original packaging.

Return procedure for IRF1407STRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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