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Infineon Technologies IRF1407STRRPBF
- Part No.:
- IRF1407STRRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF1407STRRPBF.pdf
- Description:
- MOSFET N-CH 75V 100A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,420
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Product details
Overview
IRF1407STRRPBF from Infineon Technologies is a 75V, 100A N-channel D2Pak surface-mount power MOSFET with 7.8 mΩ RDS(on) at VGS = 10 V, optimized for high-current DC-DC converters and motor drive half-bridges where low conduction loss and fast switching are critical. It features 175°C junction rating, 390 mJ single-pulse avalanche energy, and integrated body diode with 110 ns reverse recovery time.
For engineers reviewing the IRF1407STRRPBF datasheet, IRF1407STRRPBF pinout, IRF1407STRRPBF application, or IRF1407STRRPBF equivalent, key selection criteria include continuous drain current derating above 25°C, thermal resistance (RθJC = 0.75°C/W), gate charge (Qg = 160–250 nC), and avalanche ruggedness under unclamped inductive switching.
Technical Context
This HEXFET® device uses advanced silicon processing to achieve ultra-low on-resistance per die area while maintaining robust dv/dt immunity (4.6 V/ns) and repetitive avalanche capability up to TJmax. Its D2Pak package enables high-power surface-mount operation with 200 W maximum power dissipation at TC = 25°C.
The MOSFET operates with gate threshold voltage of 2.0–4.0 V, forward transconductance of 74 S, and exhibits normalized RDS(on) drift of <1.5× from 25°C to 175°C. Body diode recovery is characterized by Qrr = 390–590 nC and trr = 110–170 ns under IF = 78 A, di/dt = 100 A/µs conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 75 V - Maximum blocking voltage before avalanche; sets upper limit for bus voltage in buck converters and H-bridge arms. |
| RDS(on) | 7.8 mΩ @ VGS = 10 V - Determines I²R conduction loss; yields ≤6.1 W loss at 78 A DC current. |
| ID (TC = 25°C) | 100 A - Continuous drain current limited by package thermal capacity, not silicon; requires heatsink for sustained operation. |
| Qg | 160–250 nC - Total gate charge defining driver strength requirement; impacts switching loss and gate drive IC selection. |
| EAS | 390 mJ - Single-pulse avalanche energy rating; enables reliable operation during inductive turn-off transients without snubbers. |
| trr | 110–170 ns - Body diode reverse recovery time; directly affects shoot-through risk and EMI in synchronous rectification. |
| RθJC | 0.75 °C/W - Junction-to-case thermal resistance; defines minimum heatsink interface performance needed to maintain TJ ≤ 175°C. |
Pinout & Package
The IRF1407STRRPBF is housed in a D2Pak (TO-263) surface-mount package with three terminals: Gate (G), Drain (D), and Source (S). The exposed drain pad provides low-inductance, high-current path and serves as primary thermal interface to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control input | Receives 10 V logic-level signal to fully enhance channel; requires ≥2.0 V to begin conduction, ≤4.0 V threshold max. |
| D | Main current output terminal | Connected to high-side or low-side power rail; electrically and thermally tied to large copper pour via exposed pad. |
| S | Source reference and return path | Serves as common node for gate drive reference and load current return; internal source inductance LS = 7.5 nH affects switching waveform fidelity. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 7.8 mΩ enables >96% efficiency in 48 V input, 12 V output 50 A DC-DC stages at full load. |
| 175°C operating junction temperature | Allows operation in sealed enclosures or high-ambient industrial environments without forced air cooling. |
| Repetitive avalanche rated | Permits safe operation under unclamped inductive switching up to TJmax, eliminating need for external clamping diodes in motor drives. |
| Dynamic dv/dt rating | 4.6 V/ns immunity prevents false turn-on during high-speed commutation in half-bridge topologies. |
Applications
| High-Efficiency DC-DC Converters | Brushless DC Motor Drives |
|---|---|
Use Scenario: 48 V to 12 V step-down converter in telecom power shelf delivering 60 A continuous output. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch in multiphase buck regulator; switched at 300 kHz with 50% duty cycle. Use Value: 7.8 mΩ RDS(on) reduces conduction loss to 28.1 W per phase at 30 A, enabling >95% peak efficiency without liquid cooling. | Use Scenario: 3-phase inverter driving 2 kW BLDC motor in HVAC compressor with field-oriented control. IC Role / Device Role / Timing Role: High-side and low-side power switch in each leg; operated with 2 µs dead-time and 15 kHz PWM frequency. Use Value: 390 mJ avalanche energy rating absorbs inductive kickback during short-circuit events, preventing latch-up or failure without added protection circuitry. |
| Industrial UPS Inverters | Automotive On-Board Chargers |
Use Scenario: 5 kVA double-conversion UPS with 400 V DC bus and 230 V AC output using full-bridge topology. IC Role / Device Role / Timing Role: Output stage switch handling 12 A RMS fundamental current; subjected to line surges and zero-crossing transitions. Use Value: 4.6 V/ns dv/dt immunity suppresses parasitic turn-on during rapid bus voltage transitions, reducing gate driver stress and EMI generation. | Use Scenario: 6.6 kW bidirectional OBC in PHEV, operating in AC/DC and DC/AC modes with SiC boost stage. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated LLC resonant converter; conducts 85 A peak during charging cycles. Use Value: 100 A continuous rating at TC = 25°C and 70 A at TC = 100°C supports high-duty-cycle operation while maintaining <110°C junction temperature with standard heatsinking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP110N75F7 | 75 V, 110 A, RDS(on) = 6.5 mΩ, D2PAK package, Qg = 150 nC | Lower RDS(on) improves conduction loss but higher Ciss (6200 pF) increases switching loss at >200 kHz | Select when optimizing for <100 kHz operation with minimal conduction loss; verify gate driver capability for higher Qg edge rate. |
| IXTH100N075L2 | 75 V, 100 A, RDS(on) = 7.5 mΩ, TO-247 package, RθJC = 0.45°C/W | Superior thermal resistance enables 30% higher power density but requires through-hole mounting and larger board area | Prefer for space-constrained industrial inverters needing >150 W dissipation; avoid if surface-mount assembly is mandatory. |
Compared with STP110N75F7 and IXTH100N075L2, the IRF1407STRRPBF offers balanced trade-offs: best-in-class surface-mount thermal performance (RθJC = 0.75°C/W), verified avalanche ruggedness, and gate charge compatible with standard 1-A peak drivers-making it optimal for high-volume, automated assembly of mid-power industrial converters.
Availability
IRF1407STRRPBF is available at Aetrix Electronics and suitable for high-current DC-DC converters, brushless motor drives, and industrial UPS inverters requiring stable component supply across multi-year production cycles.
Supply support for IRF1407STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.
The IRF1407STRRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial motor drives, renewable energy systems, and server power supplies.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRF1407STRRPBF supports 70 A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2Pak package and must be validated with actual PCB copper area and airflow conditions.
Does this MOSFET require a gate resistor for stability in hard-switching applications?
Yes-a gate resistor of 2.5 Ω is used in the official switching time test circuit (Fig. 10a) to control dV/dt and prevent oscillation. For 300 kHz operation, a 5–10 Ω resistor balances switching speed and ringing suppression while keeping gate driver losses below 0.5 W.
Can the IRF1407STRRPBF replace the obsolete IRF1407LPbF in existing designs?
Yes-the IRF1407STRRPBF (D2Pak) is a direct surface-mount replacement for the through-hole IRF1407LPbF (TO-262), sharing identical electrical specs and thermal performance. Layout changes are required for footprint and solder paste stencil, but no circuit redesign is needed.
Is the body diode suitable for synchronous rectification in LLC resonant converters?
Yes-the body diode has trr = 110–170 ns and Qrr = 390–590 nC, making it viable for synchronous rectification up to 300 kHz in LLC topologies. However, its VSD = 1.3 V at 78 A increases conduction loss versus discrete Schottky diodes in high-frequency, low-voltage outputs.
IRF1407STRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7.8mOhm @ 78A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 250 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF1407STRRPBF FAQ
1.How can I place an order for IRF1407STRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF1407STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF1407STRRPBF reliable?
The price and inventory of IRF1407STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1407STRRPBF is usually 5 days.
3.What payment methods are accepted for IRF1407STRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1407STRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF1407STRRPBF?
IRF1407STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF1407STRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF1407STRRPBF?
For technical support, including IRF1407STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1407STRRPBF requirements.
6.How does Aetrix verify that IRF1407STRRPBF is sourced from the original manufacturer or authorized distributors?
All IRF1407STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1407STRRPBF meets industry standards.
7.What is the process for return or replacement of IRF1407STRRPBF?
All IRF1407STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1407STRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF1407STRRPBF part is unused and in its original packaging.
Return procedure for IRF1407STRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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