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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1503PBF

Name: IRF1503PBF
Brand: Infineon Technologies
SKU: IRF1503PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1503PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF1503PBF.pdf

Description:: MOSFET N-CH 30V 75A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:3,325

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Product details

Overview

IRF1503PBF from Infineon Technologies is a 30V, 75A (package-limited), N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, featuring 2.6mΩ typical R_DS(on) at V_GS = 10V, 175°C maximum junction temperature, and 980mJ tested single-pulse avalanche energy. It serves as a high-current, low-loss main switch in DC-DC converters, motor drives, and power supplies.

For engineers reviewing the IRF1503PBF datasheet, IRF1503PBF pinout, IRF1503PBF application, or IRF1503PBF equivalent, key selection criteria include its 3.3mΩ max R_DS(on), 960A pulsed drain current capability, fast switching (t_r = 130ns), repetitive avalanche rating up to T_jmax, and thermal resistance of 0.45°C/W junction-to-case.

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction loss while maintaining robust unclamped inductive switching performance. Its gate charge profile (Q_g = 130–200nC) and low C_iss (5730pF) support efficient high-frequency operation up to several hundred kHz in hard-switched topologies.

The integrated body diode exhibits V_SD = 1.3V at 140A and t_rr = 71–110ns with Q_rr = 110–170nC, enabling moderate-speed synchronous rectification or freewheeling in buck and half-bridge configurations without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - Maximum blocking voltage before avalanche; sets upper limit for input/output rail voltage in step-down or H-bridge designs.
R_DS(on) max	3.3mΩ @ V_GS = 10V, I_D = 140A - Determines conduction loss (P_cond ≈ I² × R_DS(on)) at full load; enables <1W loss at 170A continuous.
I_D cont @ T_C = 25°C	75A - Package-limited continuous current; defines heatsink sizing baseline when case temperature is maintained at 25°C.
E_AS tested	980mJ - Verified single-pulse avalanche energy; supports reliable operation during inductive turn-off transients without snubber circuits.
Q_g typ	130nC - Total gate charge required to fully switch; determines driver strength requirement and switching loss (E_sw ∝ Q_g × V_GS).
R_θJC	0.45°C/W - Junction-to-case thermal resistance; enables direct calculation of junction temperature rise (ΔT_j = P_d × 0.45) under forced conduction cooling.
t_r/t_f	130ns/48ns - Rise/fall times at I_D = 140A, V_DD = 15V; constrains minimum practical switching period and EMI filter design.

Pinout & Package

IRF1503PBF is housed in a standard TO-220AB package with isolated tab (drain-connected). The package features a metal tab for mechanical mounting and thermal conduction to heatsinks, with plastic body insulation between tab and leads.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-current output terminal	Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits direct connection.
Source	Power return path and reference for gate drive	Serves as common node for load return and gate-source voltage reference; layout must minimize inductance to reduce switching overshoot.
Gate	Control input for channel conduction	High-impedance MOS control node; requires low-inductance gate resistor (RG = 2.5Ω typical) to damp ringing and control dV/dt.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	2.6mΩ typ at 10V drive - Reduces conduction losses by >30% vs. legacy 30V MOSFETs, enabling higher efficiency in 12V/24V bus systems.
175°C rated junction	Maximum operating temperature - Allows sustained operation in sealed enclosures or high-ambient environments without derating below 100°C case temperature.
Repetitive avalanche rated	Up to T_jmax with pulse limits - Eliminates need for external clamping diodes in inductive load switching (e.g., solenoid drivers, BLDC phase legs).
Fast switching speed	t_r = 130ns, t_f = 48ns - Supports >200kHz PWM in DC-DC converters while maintaining <5% switching loss share at full load.

Applications

Industrial Motor Drive

DC-DC Converter Primary Switch

Use Scenario: High-current half-bridge leg in 24V brushless DC motor controllers driving fans or pumps.

IC Role / Device Role / Timing Role: Main power switch handling bidirectional 75A peak phase current with 100% duty cycle capability at reduced ambient.

Use Value: Low R_DS(on) minimizes I²R heating during stall conditions; 175°C rating ensures reliability during extended overload events.

Use Scenario: Synchronous rectifier or primary-side switch in 12V-to-5V/3.3V non-isolated buck converter for industrial PLC I/O modules.

IC Role / Device Role / Timing Role: High-side switching element operating at 300kHz with 70% duty cycle, delivering up to 60A continuous output.

Use Value: Fast t_r/t_f reduces dead-time losses; low Q_g eases gate driver selection and improves light-load efficiency.

Automotive Body Control Module

Power Distribution Switch

Use Scenario: Load switch for high-power lighting (LED headlamps, fog lamps) in 12V vehicle electrical architecture.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays, supporting PWM dimming and diagnostic current sensing.

Use Value: 980mJ avalanche rating withstands inductive kickback from lamp filaments; AEC-Q101 stress qualification confirmed per manufacturer documentation.

Use Scenario: Centralized 30A power rail switch in server backplane or telecom shelf with hot-swap and fault protection.

IC Role / Device Role / Timing Role: Main distribution FET controlled via microcontroller GPIO, enabling soft-start and overcurrent shutdown.

Use Value: 960A pulsed ID allows safe inrush current limiting; low R_DS(on) keeps voltage drop <200mV at full rated load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF3LL	R_DS(on) = 4.5mΩ max, V_DSS = 30V, Q_g = 105nC, TO-220FP package (isolated tab)	Lower peak current (IDM = 120A), no specified avalanche rating	Preferred where lower gate drive power is critical and avalanche robustness is not required.
IXTH75N30L2	R_DS(on) = 3.2mΩ max, V_DSS = 300V, TO-247 package, 175°C rating	Higher voltage rating increases cost and capacitance; unsuitable for 30V systems due to excessive C_oss	Only suitable if future voltage scalability or higher breakdown margin is needed; otherwise over-specified.

Compared with STP30NF3LL and IXTH75N30L2, IRF1503PBF offers the best balance of ultra-low on-resistance, verified avalanche ruggedness, and TO-220AB thermal performance for 30V, high-current switching-making it optimal for space-constrained industrial and automotive power stages where reliability under transient stress is mandatory.

Availability

IRF1503PBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converter primary switches, and automotive body control modules requiring stable component supply and long-term production continuity.

Supply support for IRF1503PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The IRF1503PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in demanding 12V–48V systems where low conduction loss and rugged transient handling are essential.

FAQ

What is the maximum continuous drain current for IRF1503PBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 170A, limited by silicon thermal capacity-not package constraints. This value assumes adequate heatsinking to maintain case temperature at 100°C and accounts for R_DS(on) increase with temperature (normalized to 1.8× at 175°C per Fig.10). Derating begins linearly above 25°C case temperature.

Does IRF1503PBF have an isolated drain tab?

Yes, the TO-220AB package features an electrically isolated drain tab. The metal tab is internally connected only to the drain terminal and insulated from the source and gate leads. This allows direct mounting to a grounded heatsink without shorting the drain to system ground, provided the isolation voltage rating (≥1500V RMS) is respected in the application.

Can IRF1503PBF be used in synchronous rectification applications?

Yes, but with caution: its body diode has V_SD = 1.3V at 140A and t_rr = 71–110ns, making it usable in low-frequency (<100kHz) synchronous rectifiers where reverse recovery loss is manageable. For high-frequency designs, external Schottky or GaN FETs are preferred due to lower forward voltage and zero reverse recovery charge.

What is the recommended gate resistor value for hard-switched operation at 200kHz?

A gate resistor of 2.5Ω is recommended for hard-switched operation at 200kHz, based on the device's 130nC typical gate charge and 130ns rise time. This value balances switching speed against gate driver stress and EMI generation. Lower values (1–2Ω) may be used with robust gate drivers to reduce switching loss, but require careful PCB layout to avoid oscillation.

IRF1503PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 140A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 200 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5730 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 330W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF1503PBF FAQ

1.How can I place an order for IRF1503PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1503PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1503PBF reliable?

The price and inventory of IRF1503PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1503PBF is usually 5 days.

3.What payment methods are accepted for IRF1503PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1503PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1503PBF?

IRF1503PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1503PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1503PBF?

For technical support, including IRF1503PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1503PBF requirements.

6.How does Aetrix verify that IRF1503PBF is sourced from the original manufacturer or authorized distributors?

All IRF1503PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1503PBF meets industry standards.

7.What is the process for return or replacement of IRF1503PBF?

All IRF1503PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1503PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1503PBF part is unused and in its original packaging.

Return procedure for IRF1503PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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