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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1503SPBF

Name: IRF1503SPBF
Brand: Infineon Technologies
SKU: IRF1503SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1503SPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF1503SPBF.pdf

Description:: MOSFET N-CH 30V 75A D2PAK

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Product details

Overview

IRF1503SPBF from Infineon Technologies is a 30V, 75A (package-limited), N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK (TO-263) package, featuring 2.6 mΩ typical R_DS(on) at V_GS = 10 V, 175°C maximum junction temperature, and rated for repetitive avalanche operation up to T_Jmax. It serves as a high-current, low-loss main switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF1503SPBF datasheet, IRF1503SPBF pinout, IRF1503SPBF application, or IRF1503SPBF equivalent, key selection criteria include its 3.3 mΩ max R_DS(on), 960 A pulsed drain current capability, fast switching (t_r = 130 ns), integrated body diode with 110 ns t_rr, and thermal resistance of 0.75°C/W junction-to-case - all critical for high-efficiency power stage design.

Technical Context

This MOSFET employs stripe planar silicon processing to minimize on-resistance per unit area while maintaining robust avalanche ruggedness. Its gate charge profile (Q_g = 130–200 nC) and Miller charge (Q_gd = 41–62 nC) are optimized for hard-switched topologies requiring controlled dV/dt and reduced switching loss.

The device integrates a fast, low-V_SD body diode (1.3 V @ 140 A, t_rr = 71–110 ns) and supports unclamped inductive switching with validated single-pulse EAS = 980 mJ (tested) and repetitive avalanche energy up to 510 mJ under defined conditions - enabling reliable operation in freewheeling and regenerative braking paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage in off-state; defines upper limit for bus voltage in 24 V systems.
R_DS(on) max	3.3 mΩ @ V_GS = 10 V, I_D = 140 A - Directly determines conduction loss (P_cond ≈ I² × R_DS(on)) in high-current paths.
I_D continuous	75 A @ T_C = 25°C - Package-limited current rating; sets heatsink sizing baseline for sustained operation.
Q_g total	130–200 nC - Governs gate driver power requirement and switching speed trade-off in PWM control.
t_r/t_f	130 ns / 48 ns @ I_D = 140 A - Enables high-frequency switching (>100 kHz) with minimized overlap loss.
EAS tested	980 mJ - Validated single-pulse avalanche energy; confirms robustness against inductive turn-off transients.
T_J max	+175°C - Allows operation in high-ambient industrial environments without derating penalty below this limit.

Pinout & Package

IRF1503SPBF is housed in a surface-mount D2PAK (TO-263) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard configuration: Drain (tab), Source (pins 2 & 3), Gate (pin 1).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current output path / high-side switch node	Electrically and thermally connected to PCB copper pour; must be isolated from other layers except dedicated drain plane.
Source (Pins 2 & 3)	Reference node for gate drive and current return	Low-inductance dual-pin layout minimizes source inductance (L_S), critical for stable switching and reduced ringing.
Gate (Pin 1)	Control input for channel modulation	High-impedance terminal requiring low-impedance gate driver path; sensitive to noise coupling due to Miller effect (C_rss = 290 pF).

Key Features

Feature	Design Value
Ultra-low R_DS(on)	2.6 mΩ typ. @ 10 V - Reduces conduction loss by >30% vs. legacy 30 V MOSFETs at 100 A, improving system efficiency in 12–24 V power stages.
Repetitive avalanche rated	Validated to 510 mJ E_AR - Enables reliable operation in unclamped inductive loads (e.g., motor phase legs) without external snubbers.
Fast body diode	t_rr = 71–110 ns, Q_rr = 110–170 nC - Minimizes reverse recovery loss and EMI during synchronous rectification or freewheeling.
High-temperature operation	T_J = –55°C to +175°C - Supports deployment in under-hood automotive, industrial motor drives, and sealed power supplies without thermal throttling.
Thermal performance	R_θJC = 0.75°C/W - Enables compact heatsinking; 200 W power dissipation achievable with modest thermal interface and 10 cm² copper area.

Applications

Industrial Motor Drive

DC-DC Converter Primary Switch

Use Scenario: High-current H-bridge for 24 V BLDC motor control in factory automation actuators.

IC Role / Device Role / Timing Role: Main low-side switching element in half-bridge leg, conducting up to 75 A continuous with <100 ns dead-time tolerance.

Use Value: Low R_DS(on) reduces I²R heating during 100% duty-cycle stall conditions; avalanche rating eliminates need for external clamping diodes.

Use Scenario: 200 kHz synchronous buck converter delivering 60 A at 5 V from 24 V input in telecom power shelf.

IC Role / Device Role / Timing Role: High-current primary switch handling peak currents >140 A during transient load steps.

Use Value: Fast switching (t_r/t_f) and low Q_gd enable clean turn-on/turn-off with minimal shoot-through risk; low C_oss (2250 pF) reduces capacitive loss at high frequency.

Automotive Body Control Module

Power Distribution Switch

Use Scenario: Load driving for HVAC blower motors and seat adjustment actuators in 12 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: Protected high-side power switch with integrated diagnostics and overcurrent response.

Use Value: 175°C rating ensures reliability in engine bay proximity; body diode enables bidirectional current flow during motor regeneration without external components.

Use Scenario: Solid-state replacement for mechanical relays in 24 V commercial vehicle battery disconnect and auxiliary power distribution.

IC Role / Device Role / Timing Role: Low-loss, high-reliability main power path switch with fault reporting via sense-FET or external current monitor.

Use Value: 960 A pulsed current rating handles cold-cranking surges; low R_DS(on) eliminates contact resistance drift and arcing failure modes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 2.0 mΩ max @ 10 V, but rated only to 150 A pulsed (not avalanche-tested); smaller PowerFLAT 5x6 package.	Lacks documented repetitive avalanche rating; unsuitable for unclamped inductive switching without external protection.	Prefer where board space is constrained and avalanche stress is absent; verify gate drive compatibility (lower Q_g = 105 nC).
IXTP150N04T4	40 V V_DSS, R_DS(on) = 3.2 mΩ max, TO-220 package, 175°C rated, but EAS = 420 mJ (lower than IRF1503SPBF's 510 mJ).	Higher voltage margin allows use in 36 V systems; through-hole mounting eases prototyping but limits thermal performance (R_θJC = 1.0°C/W).	Select when 40 V headroom is required or manual assembly dominates; accept ~15% lower avalanche energy margin.

Compared with STL220N3LLH6 and IXTP150N04T4, IRF1503SPBF offers superior avalanche ruggedness and thermal resistance in a surface-mount package, making it optimal for high-reliability, high-current 24 V power conversion where transient robustness and thermal density are prioritized.

Availability

IRF1503SPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and automotive body control modules requiring stable component supply and long-term production continuity.

Supply support for IRF1503SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-current, high-efficiency switching in industrial and transportation power systems - emphasizing low conduction loss, thermal resilience, and ruggedness under transient stress.

FAQ

What is the maximum continuous drain current for IRF1503SPBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 130 A, limited by silicon thermal capacity rather than package constraints. This value assumes adequate heatsinking and V_GS = 10 V. At this temperature, R_DS(on) increases to approximately 1.8× its 25°C value, so conduction loss must be recalculated using the normalized curve in Figure 10.

Does IRF1503SPBF require a gate resistor for safe operation?

Yes - a gate resistor (typically 2.5–10 Ω) is required to control dI/dt and suppress oscillation caused by gate-drain capacitance (C_rss = 290 pF) interacting with PCB inductance. Without it, excessive ringing can cause false turn-on or gate oxide overstress. The recommended test condition in the datasheet uses R_G = 2.5 Ω for switching time characterization.

Can IRF1503SPBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (see Fig. 10) enables inherent current sharing when paralleled. However, layout symmetry (matched gate and source inductance) and individual gate resistors are mandatory. Derate total current by 15% to account for thermal coupling and parameter spread; do not exceed 75 A per device in shared heatsink configurations.

Is the body diode in IRF1503SPBF suitable for synchronous rectification?

No - while the body diode has fast recovery (t_rr = 71–110 ns), its forward voltage (V_SD = 1.3 V @ 140 A) is significantly higher than discrete Schottky or GaN FETs. For synchronous rectification above 5 A, an external low-V_F MOSFET is strongly recommended to avoid >10 W conduction loss and thermal runaway at high duty cycles.

IRF1503SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 140A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 200 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5730 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF1503SPBF FAQ

1.How can I place an order for IRF1503SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1503SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1503SPBF reliable?

The price and inventory of IRF1503SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1503SPBF is usually 5 days.

3.What payment methods are accepted for IRF1503SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1503SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1503SPBF?

IRF1503SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1503SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1503SPBF?

For technical support, including IRF1503SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1503SPBF requirements.

6.How does Aetrix verify that IRF1503SPBF is sourced from the original manufacturer or authorized distributors?

All IRF1503SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1503SPBF meets industry standards.

7.What is the process for return or replacement of IRF1503SPBF?

All IRF1503SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1503SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1503SPBF part is unused and in its original packaging.

Return procedure for IRF1503SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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