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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1503STRLPBF

Name: IRF1503STRLPBF
Brand: Infineon Technologies
SKU: IRF1503STRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1503STRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF1503STRLPBF.pdf

Description:: MOSFET N-CH 30V 75A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:7,415

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Product details

Overview

IRF1503STRLPBF from Infineon Technologies is a 30V, 75A N-channel HEXFET® Power MOSFET in D2PAK (TO-263) package, featuring 2.6mΩ typical R_DS(on) at V_GS = 10V, 175°C maximum junction temperature, and rated for repetitive avalanche operation up to T_jmax. It serves as a high-current, low-loss main switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF1503STRLPBF datasheet, IRF1503STRLPBF pinout, IRF1503STRLPBF application, or IRF1503STRLPBF equivalent, key selection criteria include its 3.3mΩ max R_DS(on), 960A pulsed drain current capability, fast switching (t_r = 130ns), body diode recovery performance (Q_rr = 110–170nC), and thermal resistance (R_θJC = 0.75°C/W).

Technical Context

This N-channel enhancement-mode MOSFET uses stripe planar processing to minimize on-resistance per silicon area while maintaining robust avalanche ruggedness. Its gate threshold voltage (2.0–4.0V) and 130nC typical total gate charge support standard 10V gate drivers in high-frequency synchronous rectification.

The device integrates a fast-recovery body diode with V_SD = 1.3V at 140A and t_rr = 71–110ns, enabling efficient freewheeling in hard-switched topologies. Thermal design is enabled by its low R_θJC and linear derating factor of 1.3W/°C above 25°C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - Maximum blocking voltage before avalanche; defines safe operating range in 24V bus systems.
R_DS(on) max	3.3mΩ at V_GS = 10V, I_D = 140A - Enables <1.2W conduction loss at 75A continuous current.
I_D continuous	75A at T_C = 25°C - Package-limited rating; determines heatsink sizing for sustained load conditions.
E_AS tested	980mJ - Confirmed single-pulse avalanche energy; supports unclamped inductive turn-off without failure.
Q_g typ	130nC - Gate drive energy requirement; sets minimum gate driver peak current (≥5A for 25ns rise time).
t_r/t_f	130ns / 48ns - Fast edge rates reduce switching losses in 100–500kHz power stages.
R_θJC	0.75°C/W - Junction-to-case thermal resistance; enables direct mounting to heatsink with minimal interface resistance.

Pinout & Package

IRF1503STRLPBF is housed in a surface-mount D2PAK (TO-263) package with three terminals: Drain (tab), Source (pins 2 & 3), and Gate (pin 1). The exposed drain pad provides low-inductance, high-current path and primary thermal conduction path to PCB copper or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current output terminal	Electrically and thermally connected to PCB copper pour or heatsink; carries full load current and dissipates heat directly.
Source (Pins 2 & 3)	Reference node for gate drive and current return	Dual-pin layout reduces source inductance; critical for minimizing voltage spikes during high di/dt switching.
Gate (Pin 1)	Control input for channel conduction	High-impedance MOS gate requiring <200nA leakage control; sensitive to ESD and requires proper gate resistor (RG = 2.5Ω typical).

Key Features

Feature	Design Value
Ultra-low R_DS(on)	2.6mΩ typ at 10V gate drive - Reduces conduction loss by >30% vs. legacy 30V MOSFETs in 48V input DC-DC stages.
175°C junction rating	Extended thermal margin - Allows operation in sealed enclosures or high ambient environments without derating.
Repetitive avalanche rated	Validated up to T_jmax - Eliminates need for external snubbers in inductive load switching (e.g., solenoid drivers).
Fast body diode	t_rr = 71ns, Q_rr = 110nC - Minimizes reverse recovery loss and EMI in synchronous buck and half-bridge topologies.
Low gate charge	Q_gs = 36nC, Q_gd = 41nC - Enables efficient gate driving with low-power controllers and reduces Miller-induced shoot-through risk.

Applications

Industrial Motor Drive

DC-DC Converter Primary Switch

Use Scenario: High-current H-bridge for 24V brushed DC motors in automated conveyors and CNC axes.

IC Role / Device Role / Timing Role: Main power switch in low-side configuration; handles bidirectional 75A peak current with <50ns dead-time control.

Use Value: Low R_DS(on) cuts I²R losses by 40% vs. 5mΩ alternatives, reducing heatsink mass by 60% in space-constrained enclosures.

Use Scenario: Primary-side switch in isolated 48V-to-12V 500W forward converter for telecom power shelves.

IC Role / Device Role / Timing Role: Hard-switched PWM transistor operating at 250kHz; synchronized with secondary-side rectifier timing.

Use Value: 130ns rise time and 980mJ avalanche rating enable reliable operation under output short-circuit fault conditions without clamping circuits.

Automotive Body Control Module

High-Power LED Driver

Use Scenario: Load switch for HVAC blower motor and seat heater circuits in 12V vehicle architectures.

IC Role / Device Role / Timing Role: High-side or low-side power FET controlled via CAN-linked microcontroller GPIO with PWM dimming.

Use Value: 175°C rating ensures reliability across -40°C to +125°C under-hood environments without thermal shutdown.

Use Scenario: Constant-current switch in 36V, 10A multi-string LED driver for commercial lighting fixtures.

IC Role / Device Role / Timing Role: Linear or PWM-controlled current regulator; conducts 75A pulses during strobe mode.

Use Value: 960A pulsed drain rating supports 10ms emergency flash bursts without SOA violation or bond-wire fusing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N3LLH6	R_DS(on) = 2.3mΩ (typ), but only rated to 150°C junction; no published repetitive avalanche data.	Suitable for non-avalanche-critical 24V SMPS where thermal margin is less constrained.	Prefer when lower on-resistance is prioritized over ruggedness in well-regulated thermal environments.
IXTP120N04T4	40V V_DSS, R_DS(on) = 3.8mΩ (max), TO-220 package; higher R_θJA (62°C/W) limits power density.	Better suited for prototyping or low-volume industrial controls where through-hole assembly is required.	Select when board-level serviceability or manual soldering is mandatory, accepting 15% higher conduction loss.

Compared with STL110N3LLH6 and IXTP120N04T4, IRF1503STRLPBF delivers superior avalanche ruggedness and thermal performance in surface-mount high-current designs-critical for automotive and industrial systems where fault tolerance and power density are non-negotiable.

Availability

IRF1503STRLPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and automotive body control modules requiring stable component supply and long-term production continuity.

Supply support for IRF1503STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in demanding industrial and transportation applications where thermal resilience and avalanche robustness are essential.

FAQ

What is the maximum allowable gate-to-source voltage for IRF1503STRLPBF?

The absolute maximum V_GS rating is ±20V. Operation beyond ±15V risks permanent gate oxide damage. For reliable 10V logic-level drive, a 12V gate supply with 10kΩ pull-down and 2.5Ω series resistor is recommended to limit dv/dt-induced ringing and ensure clean turn-on/turn-off transitions.

Can IRF1503STRLPBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (normalized to 1.5× at 125°C) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared thermal interface to avoid thermal runaway; up to four devices have been validated in 300A motor drive inverters.

Does IRF1503STRLPBF require a gate resistor, and what value is recommended?

A gate resistor is mandatory to dampen LC oscillation and control switching speed. A 2.5Ω resistor is specified in the datasheet for 10V drive with RG = 2.5Ω test condition; values between 1.5Ω and 5Ω balance EMI reduction against switching loss in 100–300kHz applications.

Is the drain tab electrically isolated from the PCB mounting surface?

No-the drain (tab) is internally connected to the MOSFET die's drain region and must be electrically isolated from other circuit nodes using insulating thermal pads or ceramic substrates. Direct soldering to copper pour establishes both electrical connection and primary thermal path to heatsink or internal PCB plane.

IRF1503STRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 140A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 200 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5730 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF1503STRLPBF FAQ

1.How can I place an order for IRF1503STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1503STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1503STRLPBF reliable?

The price and inventory of IRF1503STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1503STRLPBF is usually 5 days.

3.What payment methods are accepted for IRF1503STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1503STRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1503STRLPBF?

IRF1503STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1503STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1503STRLPBF?

For technical support, including IRF1503STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1503STRLPBF requirements.

6.How does Aetrix verify that IRF1503STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRF1503STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1503STRLPBF meets industry standards.

7.What is the process for return or replacement of IRF1503STRLPBF?

All IRF1503STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1503STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1503STRLPBF part is unused and in its original packaging.

Return procedure for IRF1503STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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