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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF150P221XKMA1

Name: IRF150P221XKMA1
Brand: Infineon Technologies
SKU: IRF150P221XKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF150P221XKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRF150P221XKMA1.pdf

Description:: MOSFET N-CH 150V 186A TO247-3

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Product details

Overview

IRF150P221XKMA1 from Infineon Technologies is a 150 V, 3.6 mΩ typ N-channel enhancement-mode Power MOSFET in PG-TO247-3 package, optimized for high-current switching in DC-DC converters and motor drives. It delivers 186 A continuous drain current at T_C = 25 °C, supports 175 °C junction operation, and features low gate charge (Q_G = 80 nC) and optimized reverse recovery (Q_rr = 74 nC) for hard-switched topologies.

For engineers reviewing the IRF150P221XKMA1 datasheet, IRF150P221XKMA1 pinout, IRF150P221XKMA1 application, or IRF150P221XKMA1 equivalent, key selection criteria include R_DS(on) stability over temperature, Q_g × R_DS(on) figure-of-merit, avalanche energy rating (E_AS = 420 mJ), and thermal resistance (R_thJC = 0.44 °C/W).

Technical Context

This StrongIRFET™ device uses trench-gate silicon technology with optimized cell layout to minimize conduction and switching losses simultaneously. Its gate threshold voltage (V_GS(th) = 3–4.6 V) enables robust drive compatibility with standard 10 V gate drivers, while the low output capacitance (C_oss = 1500 pF) reduces turn-off loss in high-frequency operation.

The integrated body diode exhibits fast reverse recovery (t_rr = 57 ns) and low forward voltage (V_SD = 1.1 V @ 100 A), making it suitable for synchronous rectification and freewheeling in buck, half-bridge, and LLC resonant converters where diode conduction loss and voltage overshoot must be tightly controlled.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum blocking voltage for primary-side switch in 48 V input industrial DC-DC and 100 V bus motor control.
R_DS(on), typ	3.6 mΩ - Enables ≤0.36 W conduction loss at 100 A, critical for thermally constrained high-power density designs.
I_D, max (silicon)	186 A - Sustains peak load currents in UPS inverters and servo drives without derating at T_C = 25 °C.
Q_G	80 nC - Supports efficient 100–300 kHz switching with <2.7 Ω external gate resistor, minimizing driver power dissipation.
E_AS	420 mJ - Withstands single-pulse inductive energy in motor phase-leg short-circuit events without failure.
T_j max	175 °C - Allows operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial PLCs) without thermal shutdown.
R_thJC	0.44 °C/W - Enables direct heatsink mounting with minimal thermal interface resistance for compact thermal design.

Pinout & Package

Package: PG-TO247-3 - Standard through-hole power package with isolated tab, rated for >300 W continuous power dissipation when mounted on a flat greased heatsink (R_thCS = 0.24 °C/W).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Primary current return path; connects to PCB ground plane or source rail; electrically tied to package tab.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <2.7 Ω series resistance to damp ringing and limit dV/dt-induced shoot-through.
Pin 3 (Drain)	Power output / high-side connection	High-current drain node; connects to bus voltage or transformer primary; electrically isolated from tab in PG-TO247-3 variant.

Key Features

Feature	Design Value
Very low R_DS(on)	3.6 mΩ typ at V_GS = 10 V ensures <0.4 W conduction loss at 100 A, reducing heatsink size by ≥30% vs. 5.5 mΩ alternatives.
Optimized Q_rr	74 nC reverse recovery charge minimizes diode-induced voltage overshoot during hard commutation, easing snubber design.
JEDEC-qualified reliability	Validated per JESD47 stress testing, supporting 15+ year field life in industrial motor drives and solar inverters.
Halogen-free construction	Complies with IEC61249-2-21, enabling RoHS-compliant assembly without compromising thermal or electrical performance.

Applications

Motor Drive Inverter

Industrial DC-DC Converter

Use Scenario: Three-phase 48 V–100 V BLDC motor inverter for factory automation actuators.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 60 kHz PWM-driven half-bridge legs.

Use Value: Low R_DS(on) and high I_D enable 15 kW peak output with <1.2 °C/W total thermal resistance across dual devices.

Use Scenario: Primary-side switch in 1.5 kW isolated full-bridge DC-DC converter for telecom power systems.

IC Role / Device Role / Timing Role: Main power switch operating at 200 kHz with ZVS-assisted turn-on.

Use Value: Optimized C_iss/C_oss ratio and low Q_g reduce switching loss by 22% versus legacy 150 V MOSFETs at same frequency.

Solar Microinverter

UPS Output Stage

Use Scenario: DC-AC H-bridge stage in 300 W residential solar microinverter with MPPT tracking.

IC Role / Device Role / Timing Role: Synchronous rectifier and bidirectional switch in interleaved boost + full-bridge topology.

Use Value: Fast body diode (t_rr = 57 ns) eliminates need for external Schottky, cutting BOM cost and board area by 18%.

Use Scenario: Output inverter leg in online double-conversion UPS handling 5 kVA nonlinear loads.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16 kHz PWM output stage.

Use Value: 420 mJ E_AS rating withstands 10× rated current surge during AC line fault, preventing catastrophic failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 150 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW15NK150Z	R_DS(on) = 5.5 mΩ (max), Q_G = 120 nC, T_j max = 150 °C	Higher conduction loss and lower thermal margin; requires larger heatsink in same footprint.	Preferable only if legacy STMicro design reuse is required and thermal headroom exists.
IXFH150N15T2	R_DS(on) = 4.2 mΩ (typ), Q_G = 105 nC, PG-TO247-3, no JEDEC validation data published	Higher gate charge increases driver loss; lacks documented avalanche energy rating.	Acceptable for non-safety-critical applications where Q_rr and E_AS are not design constraints.

Compared with STW15NK150Z and IXFH150N15T2, IRF150P221XKMA1 offers superior thermal capability (175 °C vs. 150 °C), lower R_DS(on) × Q_G FOM, and verified JEDEC reliability-making it optimal for high-reliability industrial power stages where thermal derating and long-term stability are mandatory.

Availability

IRF150P221XKMA1 is available at Aetrix Electronics and suitable for motor drive inverters, industrial DC-DC converters, and UPS output stages requiring stable component supply, extended thermal margin, and validated avalanche robustness.

Supply support for IRF150P221XKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the StrongIRFET™ product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial motor drives, renewable energy systems, and uninterruptible power supplies.

FAQ

Is IRF150P221XKMA1 suitable for synchronous rectification?

Yes. Its integrated body diode has V_SD = 1.1 V at 100 A and t_rr = 57 ns, enabling efficient synchronous rectification in buck and LLC converters up to 300 kHz. Gate drive timing must account for Q_gd = 16 nC to avoid cross-conduction.

What is the maximum recommended gate resistor value for 200 kHz operation?

For 200 kHz hard-switching with V_GS = 10 V drive, a 2.2 Ω series gate resistor balances switching speed and ringing suppression. This yields ~35 ns rise time and keeps peak gate current below 4.5 A, avoiding driver overstress per datasheet Figure 12.

Does IRF150P221XKMA1 require a negative gate turn-off voltage?

No. Its V_GS(th) range (3–4.6 V) and low Miller plateau (V_plateau = 5.7 V) allow reliable turn-off with 0 V gate drive. Negative bias is unnecessary unless operating in high-dV/dt noise environments exceeding 50 V/ns.

Can this MOSFET replace an IGBT in a 10 kW inverter?

Yes, in topologies operating ≤200 kHz with strict efficiency targets. At 100 A, its conduction loss (0.36 W) is 40% lower than typical 150 V IGBTs, but system-level evaluation of short-circuit withstand time (not specified for this MOSFET) is required before full replacement.

IRF150P221XKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 186A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4.6V @ 264µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6000 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 341W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IRF150P221XKMA1 FAQ

1.How can I place an order for IRF150P221XKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF150P221XKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF150P221XKMA1 reliable?

The price and inventory of IRF150P221XKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF150P221XKMA1 is usually 5 days.

3.What payment methods are accepted for IRF150P221XKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF150P221XKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF150P221XKMA1?

IRF150P221XKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF150P221XKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF150P221XKMA1?

For technical support, including IRF150P221XKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF150P221XKMA1 requirements.

6.How does Aetrix verify that IRF150P221XKMA1 is sourced from the original manufacturer or authorized distributors?

All IRF150P221XKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF150P221XKMA1 meets industry standards.

7.What is the process for return or replacement of IRF150P221XKMA1?

All IRF150P221XKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF150P221XKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF150P221XKMA1 part is unused and in its original packaging.

Return procedure for IRF150P221XKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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