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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1607

Name: IRF1607
Brand: Infineon Technologies
SKU: IRF1607
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1607

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF1607.pdf

Description:: MOSFET N-CH 75V 142A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:3,399

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Product details

Overview

IRF1607 from Infineon Technologies (formerly International Rectifier) is a 75V, 142A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, featuring R_DS(on) = 5.8 mΩ @ V_GS = 10 V, 175°C maximum junction temperature, and 1250 mJ single-pulse avalanche energy - deployed as a main switch in high-current DC-DC converters and motor phase-legs.

For engineers reviewing the IRF1607 datasheet, IRF1607 pinout, IRF1607 application, or IRF1607 equivalent, key selection criteria include its ultra-low on-resistance at high current, validated repetitive avalanche capability up to T_jmax, fast switching (t_r = 130 ns), and thermal robustness under sustained conduction in industrial motor drive inverters.

Technical Context

This planar stripe HEXFET uses advanced silicon processing to minimize R_DS(on) per die area while maintaining ruggedness. Its gate charge profile (Q_g = 210–320 nC) supports efficient hard-switching at 38 V bus voltage with 1.8 Ω gate resistance, and its body diode exhibits t_rr = 130–200 ns and Q_rr = 690–1040 nC under 100 A/µs di/dt.

The device operates with V_GS(th) = 2.0–4.0 V and g_fs = 79 S, enabling reliable turn-on with standard 10 V gate drivers. Its dynamic dv/dt rating of 5.2 V/ns and C_oss = 1230 pF @ 25 V ensure stable commutation in high-speed half-bridge configurations without spurious turn-on.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Maximum blocking voltage before avalanche onset; defines usable DC bus range in 48 V systems.
R_DS(on)	5.8 mΩ (typ), 7.5 mΩ (max) @ V_GS = 10 V, I_D = 85 A - Directly determines conduction loss (P_cond ≈ I² × R) at rated load.
I_D @ T_C = 25°C	142 A - Continuous drain current limited by thermal resistance (R_θJC = 0.40 °C/W) and case mounting.
E_AS	1250 mJ - Single-pulse avalanche energy rating; enables unclamped inductive switching survival in motor drive fault conditions.
t_r / t_f	130 ns / 86 ns - Rise/fall times measured at V_DD = 38 V, I_D = 85 A, R_G = 1.8 Ω; sets minimum practical switching frequency.
Q_g	210–320 nC - Total gate charge determines driver power requirement and switching transition time.
T_J max	+175°C - Enables operation in sealed enclosures or high ambient environments without derating.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting. Thermal pad requires mechanical clamping and thermal interface material for optimal heat transfer to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab; must be insulated from heatsink unless system ground reference permits direct connection.
Source	Return path for drain current; reference for gate drive	Low-inductance source return critical for minimizing shoot-through risk in bridge topologies.
Gate	Control electrode for channel formation	High-impedance input requiring low-impedance driver (≤1.8 Ω) to achieve specified t_r/t_f.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	5.8 mΩ typ @ 10 V - Reduces conduction losses by >30% vs. legacy 75 V MOSFETs at 85 A.
175°C junction rating	Enables full current delivery in ambient temperatures up to 85°C with proper heatsinking - no derating required below T_C = 100°C.
Repetitive avalanche capability	Validated per Fig. 15–16 up to 10% duty cycle - allows safe operation during short-circuit events without external protection.
Fast body diode recovery	t_rr = 130 ns, Q_rr = 690 nC - Minimizes reverse recovery loss and EMI in synchronous rectification and freewheeling paths.

Applications

Industrial Motor Drive

DC-DC Converter (48 V Input)

Use Scenario: Three-phase inverter stage for 5–10 kW brushless AC motors in CNC machinery and pumps.

IC Role / Device Role / Timing Role: High-side/low-side switching element in 6-pack configuration; conducts 142 A peak phase current at 10 kHz PWM.

Use Value: Low R_DS(on) reduces I²R loss by 1.8 W per device vs. 8 mΩ alternatives, improving thermal margin at full load.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V bi-directional buck-boost converter for telecom power shelves.

IC Role / Device Role / Timing Role: Main power switch handling 100 A continuous current with 38 V V_DS during switching transitions.

Use Value: 1250 mJ E_AS withstands 200 µs inductive spikes during transient overloads without failure.

Uninterruptible Power Supply (UPS)

Electric Vehicle On-Board Charger (OBC)

Use Scenario: Inverter output stage delivering clean 230 VAC from 400 VDC bus in line-interactive UPS systems.

IC Role / Device Role / Timing Role: Half-bridge leg switch operating at 20 kHz with 175°C thermal headroom during overload conditions.

Use Value: 5.2 V/ns dv/dt rating prevents false turn-on during high dV/dt transients across transformer leakage inductance.

Use Scenario: Active clamp flyback primary switch in 3.3 kW OBC front-end converting AC to 400 VDC.

IC Role / Device Role / Timing Role: High-frequency (100 kHz) switching element managing 85 A pulsed drain current with minimal gate drive loss.

Use Value: Q_g = 210 nC enables use of cost-effective 2 A gate drivers instead of 4 A alternatives, reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP140N75F7	R_DS(on) = 5.0 mΩ (lower), Q_g = 190 nC (lower), but T_Jmax = 175°C same; no published E_AS spec	Lacks documented avalanche rating - unsuitable where unclamped inductive switching is routine	Prefer when gate drive power is constrained and avalanche stress is absent.
IXTH120N075L2	R_DS(on) = 6.2 mΩ (higher), Q_g = 260 nC (higher), but E_AS = 1400 mJ (higher); TO-247 package	Higher thermal mass and R_θJC = 0.35 °C/W - better for sustained 100 A loads but larger footprint	Prefer for higher-reliability 24/7 operation where board space allows TO-247.

Compared with STP140N75F7 and IXTH120N075L2, the IRF1607 delivers the best balance of low R_DS(on), proven avalanche robustness, and TO-220AB form factor - making it optimal for space-constrained industrial inverters requiring fault tolerance without package redesign.

Availability

IRF1607 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term production continuity.

Supply support for IRF1607 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion in motor control, renewable energy, and server power applications - emphasizing ruggedness, low conduction loss, and thermal resilience.

FAQ

Is IRF1607 lead-free and RoHS compliant?

Yes, the IRF1607PbF variant is lead-free and fully RoHS compliant per EU Directive 2011/65/EU. The "PbF" suffix indicates lead-free plating and packaging; all soldering parameters (300°C for 10 seconds) are validated for Pb-free reflow and hand-soldering processes.

What is the recommended gate resistor value for hard-switching at 20 kHz?

A 1.8 Ω gate resistor is specified in the datasheet for t_r/t_f measurements at 85 A. For 20 kHz hard-switching with 142 A peak current, use 1.5–2.2 Ω to balance switching loss, EMI, and gate driver thermal load - verified via Figure 10a/b test circuit waveforms.

Can IRF1607 replace IRF1404 in an existing design?

Yes, with caveats: IRF1607 offers lower R_DS(on) (5.8 mΩ vs. 4.9 mΩ) and higher I_D (142 A vs. 130 A), but requires verification of gate drive strength (Q_g = 210 nC vs. 193 nC) and avalanche handling (E_AS = 1250 mJ vs. 950 mJ). Layout parasitics must also be reviewed due to faster switching.

Does IRF1607 require a negative gate turn-off voltage?

No. The device specifies ±20 V absolute maximum V_GS, but standard 0 V to +10 V or +12 V gate drive is sufficient. Negative turn-off is not required - its V_GS(th) (2.0–4.0 V) ensures full enhancement at +10 V and stable cutoff at 0 V, even with Miller-induced coupling.

IRF1607 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 142A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 85A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 320 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7750 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 380W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF1607 FAQ

1.How can I place an order for IRF1607 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1607 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1607 reliable?

The price and inventory of IRF1607 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1607 is usually 5 days.

3.What payment methods are accepted for IRF1607?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1607 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1607?

IRF1607 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1607 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1607?

For technical support, including IRF1607 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1607 requirements.

6.How does Aetrix verify that IRF1607 is sourced from the original manufacturer or authorized distributors?

All IRF1607 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1607 meets industry standards.

7.What is the process for return or replacement of IRF1607?

All IRF1607 units undergo pre-shipment inspection (PSI). If there is an issue with IRF1607, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1607 part is unused and in its original packaging.

Return procedure for IRF1607:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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