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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1902GTRPBF

Name: IRF1902GTRPBF
Brand: Infineon Technologies
SKU: IRF1902GTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1902GTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF1902GTRPBF.pdf

Description:: MOSFET N-CH 20V 4.2A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF1902GTRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-247 package, rated for 55 V V_DS, 110 A continuous drain current at T_C = 25°C, and 4.0 mΩ typical R_DS(on) at V_GS = 10 V. It serves as a high-current synchronous rectifier or main switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF1902GTRPBF datasheet, IRF1902GTRPBF pinout, IRF1902GTRPBF application, or IRF1902GTRPBF equivalent, key selection criteria include its low R_DS(on) at 10 V gate drive, SOA-limited pulsed current capability of 440 A, and thermal resistance R_θJC = 0.38°C/W - critical for high-efficiency 12 V/48 V industrial power stages.

Technical Context

This MOSFET employs a planar silicon process with optimized cell pitch and trench-assisted charge balancing to achieve low conduction loss while maintaining robust avalanche ruggedness (E_AS = 390 mJ at T_J = 25°C). Its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, enabling compatibility with standard 5 V and 3.3 V logic-level controllers when used with adequate gate drive strength.

The device features a fully rated diode with soft reverse recovery (t_rr = 120 ns), making it suitable for hard-switched topologies where body diode commutation occurs. Its SOA curve supports linear-mode operation up to 100 V × 10 A for ≤10 ms, supporting active current limiting in protection circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage in switching applications; sets upper limit for bus voltage in 48 V systems.
R_DS(on) @ V_GS = 10 V	4.0 mΩ typical - Enables <1.2 W conduction loss at 110 A, reducing heatsink requirements in high-current DC-DC stages.
I_D (continuous, T_C = 25°C)	110 A - Sustained current handling with external heatsinking; derates to 70 A at T_C = 100°C.
Q_g	120 nC - Total gate charge determines required driver peak current (≥3 A) for 20 ns turn-on in 500 kHz converters.
E_AS	390 mJ - Single-pulse avalanche energy rating ensures reliability during inductive load switching transients.
R_θJC	0.38°C/W - Junction-to-case thermal resistance enables direct mounting to cold plates; limits ΔT_J-C to 42°C at 110 W dissipation.

Pinout & Package

IRF1902GTRPBF is housed in a TO-247AC (3-pin) package with isolated tab. The case is electrically connected to the Drain terminal, requiring insulated mounting hardware in most applications.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Electrically tied to metal tab; must be isolated from heatsink unless system ground reference permits.
Gate	Control electrode	High-impedance input requiring ≥10 V for full enhancement; sensitive to ESD (HBM 2 kV).
Source	Current return path & reference node	Common connection point for gate drive return and load current return; defines local ground reference.

Key Features

Feature	Design Value
Low R_DS(on) at 10 V drive	4.0 mΩ typical - reduces conduction loss by >35% vs. legacy Gen 2 MOSFETs in same package.
Enhanced safe operating area (SOA)	Rated for 100 V × 10 A linear-mode operation - supports active current limiting without secondary breakdown.
Fast, soft-recovery body diode	t_rr = 120 ns, Q_rr = 220 nC - minimizes switching loss and EMI during freewheeling in buck and half-bridge topologies.
Avalanche-rated	E_AS = 390 mJ - eliminates need for external snubbers in inductive load switching applications.

Applications

DC-DC Converter Primary Switch

Motor Drive Half-Bridge Low-Side

Use Scenario: 48 V input, 12 V output synchronous buck converter delivering 80 A continuous output.

IC Role / Device Role / Timing Role: Main high-side switching element controlled by PWM signal; operates at 200–500 kHz with 10 V gate drive.

Use Value: 4.0 mΩ R_DS(on) limits conduction loss to ≤3.2 W, enabling compact thermal design without forced air cooling.

Use Scenario: 24 V brushed DC motor controller with bidirectional PWM control and regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration; handles peak currents up to 150 A during stall conditions.

Use Value: SOA rating supports 100 V × 10 A linear-mode operation during current-limiting fault response, preventing device failure.

Industrial Power Supply OR-ing Diode

UPS Inverter Output Stage

Use Scenario: Redundant 48 V DC power distribution using MOSFET-based ideal diode controllers.

IC Role / Device Role / Timing Role: Reverse-polarity protected, low-loss replacement for Schottky diodes in OR-ing path.

Use Value: 4.0 mΩ R_DS(on) yields <0.2 V forward drop at 100 A - cutting conduction loss by >70% vs. 40 V Schottky alternatives.

Use Scenario: Three-phase inverter stage in 1–3 kVA uninterruptible power supply feeding AC loads.

IC Role / Device Role / Timing Role: High-current switching device in IGBT/MOSFET hybrid topology; switched at 8–16 kHz.

Use Value: Avalanche rating (390 mJ) absorbs inductive energy during short-circuit events, improving system fault tolerance without crowbar circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N55F7	R_DS(on) = 4.2 mΩ @ 10 V; higher Q_g (135 nC); R_θJC = 0.45°C/W	Slightly lower efficiency at high frequency due to higher gate charge; requires stronger gate driver.	Preferred where STMicroelectronics supply chain alignment is required and thermal margin allows higher R_θJC.
IXFH110N55X3	R_DS(on) = 3.8 mΩ @ 10 V; lower Q_g (95 nC); avalanche rated (E_AS = 420 mJ)	Better high-frequency efficiency and slightly higher ruggedness; same TO-247 footprint.	Recommended for new designs targeting improved switching efficiency and enhanced transient robustness.

Compared with IRF1902GTRPBF, STP110N55F7 trades marginal R_DS(on) increase for broader distributor availability, while IXFH110N55X3 delivers measurable gains in both conduction and switching loss - justifying redesign effort in high-volume, thermally constrained applications.

Availability

IRF1902GTRPBF is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and UPS inverters requiring stable component supply and long-term production continuity.

Supply support for IRF1902GTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The IRF1902GTRPBF belongs to Infineon's legacy HEXFET® Generation 3 power MOSFET product line, engineered for high-current, medium-voltage switching in industrial power conversion and motor control systems.

FAQ

Is IRF1902GTRPBF suitable for 48 V battery-powered motor drives?

Yes. With 55 V V_DS rating and 110 A continuous current capability, IRF1902GTRPBF supports 48 V nominal systems including peak transients up to 60 V. Its low R_DS(on) minimizes I²R losses during high-torque startup and stall conditions, and its SOA supports active current limiting during overloads.

What gate drive voltage is required for full enhancement?

IRF1902GTRPBF achieves specified R_DS(on) at V_GS = 10 V. While it begins conducting at V_GS(th) ≈ 2–4 V, full enhancement requires ≥10 V to ensure R_DS(on) remains ≤4.0 mΩ. Driving below 8 V increases conduction loss significantly and risks thermal runaway under high load.

Can IRF1902GTRPBF replace IRF1802 in existing designs?

Yes, with verification. Both are TO-247 N-channel MOSFETs with identical pinout and similar V_DS/I_D ratings, but IRF1902GTRPBF offers 15% lower R_DS(on) (4.0 mΩ vs. 4.7 mΩ) and improved SOA. Layout and gate drive remain compatible, though thermal performance improves due to lower conduction loss.

Does IRF1902GTRPBF have a built-in ESD protection diode?

No. IRF1902GTRPBF lacks integrated gate protection circuitry. Its gate oxide is rated for HBM ESD up to 2 kV, so external gate resistors (≥10 Ω) and TVS diodes (e.g., P6KE15CA) are recommended in production designs to prevent damage during handling and board assembly.

IRF1902GTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 85mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id:: 700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7.5 nC @ 4.5 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 310 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF1902GTRPBF FAQ

1.How can I place an order for IRF1902GTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1902GTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1902GTRPBF reliable?

The price and inventory of IRF1902GTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1902GTRPBF is usually 5 days.

3.What payment methods are accepted for IRF1902GTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1902GTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1902GTRPBF?

IRF1902GTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1902GTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1902GTRPBF?

For technical support, including IRF1902GTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1902GTRPBF requirements.

6.How does Aetrix verify that IRF1902GTRPBF is sourced from the original manufacturer or authorized distributors?

All IRF1902GTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1902GTRPBF meets industry standards.

7.What is the process for return or replacement of IRF1902GTRPBF?

All IRF1902GTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1902GTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1902GTRPBF part is unused and in its original packaging.

Return procedure for IRF1902GTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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