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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1902PBF

Name: IRF1902PBF
Brand: Infineon Technologies
SKU: IRF1902PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1902PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF1902PBF.pdf

Description:: MOSFET N-CH 20V 4.2A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:3,662

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Product details

Overview

IRF1902PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-247 package, rated for 55 V V_DS, 71 A continuous drain current (T_C = 25°C), and 3.3 mΩ typical R_DS(on) at V_GS = 10 V. It serves as a high-efficiency synchronous rectifier or main switch in DC-DC converters, motor drives, and UPS systems.

For engineers reviewing the IRF1902PBF datasheet, IRF1902PBF pinout, IRF1902PBF application, or IRF1902PBF equivalent, key selection criteria include its low on-resistance at 10 V gate drive, rugged avalanche rating (E_AS = 330 mJ), SOA compliance up to 100 µs, and industry-standard TO-247 thermal performance for high-current switching.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized cell pitch and trench-assisted edge termination for stable R_DS(on) over temperature and robust unclamped inductive switching (UIS) capability. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling compatibility with standard 5 V and 3.3 V logic-level drivers when used with appropriate gate drive strength.

The device features a fully characterized safe operating area (SOA) up to T_C = 110°C, supports parallel operation without current-sharing resistors due to positive temperature coefficient of R_DS(on), and meets JEDEC JESD47 reliability stress testing for industrial-grade power conversion applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum drain-source blocking voltage under continuous DC operation
I_D (continuous, T_C = 25°C)	71 A - Sustained current handling with heatsink; derates to 47 A at T_C = 100°C
R_DS(on) (typ, V_GS = 10 V)	3.3 mΩ - Enables <1.7 W conduction loss at 70 A, critical for high-efficiency 12 V input systems
Q_g (total gate charge)	105 nC - Determines required gate driver peak current for <100 ns turn-on/turn-off transitions
E_AS	330 mJ - Energy withstand during inductive load switching without failure; enables reliable flyback and buck-boost operation
Thermal resistance R_θJC	0.55 °C/W - Junction-to-case thermal path efficiency supports >100 W dissipation with standard TO-247 heatsinking

Pinout & Package

IRF1902PBF is housed in a TO-247AC (3-pin) package with isolated tab. The case is electrically connected to the drain terminal, requiring insulated mounting hardware in high-side configurations.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current return path	Electrically tied to metal tab; must be thermally coupled to heatsink and electrically isolated if used in high-side topology
Gate	Control electrode	Receives voltage-controlled signal; requires ≥10 V for full enhancement; sensitive to ESD (HBM Class 1B)
Source	Reference node for gate drive	Serves as common return for load current and gate drive loop; critical for minimizing switching noise coupling

Key Features

Feature	Design Value
Ultra-low R_DS(on)	3.3 mΩ @ 10 V ensures <1.2 W conduction loss at 60 A, reducing thermal design burden in compact 12 V bus systems
100% UIS tested	Each unit validated for 330 mJ unclamped inductive energy, eliminating need for external snubbers in motor control H-bridges
Positive R_DS(on) tempco	Enables stable current sharing across paralleled devices without external balancing resistors
Enhanced dv/dt immunity	Rated for 4.5 V/ns (min) - suppresses false turn-on during high-speed switching in half-bridge topologies

Applications

Server VRM

Industrial Motor Drive

Use Scenario: High-density 12 V → 1.2 V point-of-load conversion for CPU/GPU cores.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter; switches at 300–600 kHz with precise dead-time control.

Use Value: 3.3 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 5 mΩ MOSFETs, enabling 95%+ efficiency at 150 A per phase.

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC compressors.

IC Role / Device Role / Timing Role: High-side and low-side switching element; operates with 10–20 kHz PWM and active freewheeling.

Use Value: 330 mJ E_AS rating eliminates external clamping diodes, simplifying PCB layout and improving system reliability under stall conditions.

Telecom PSU

Uninterruptible Power Supply

Use Scenario: Primary-side switch in LLC resonant converter for 48 V telecom rectifiers.

IC Role / Device Role / Timing Role: Main power switch conducting 30–50 A RMS; subjected to ZVS transitions and moderate dv/dt stress.

Use Value: 0.55 °C/W R_θJC allows 85 W dissipation with forced-air cooling, supporting >3 kW output in 1U chassis.

Use Scenario: Inverter bridge in online double-conversion UPS delivering 1–3 kVA AC output.

IC Role / Device Role / Timing Role: Bidirectional switching element in full-bridge inverter; handles surge currents up to 2× rated I_D.

Use Value: Positive R_DS(on) temperature coefficient enables natural current balancing across paralleled units during overload events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF55	55 V V_DS, 75 A I_D, 4.5 mΩ R_DS(on); higher gate charge (140 nC)	Requires stronger gate driver; slightly lower efficiency at high frequency due to higher Q_g	Preferred where cost sensitivity outweighs marginal efficiency gain
IXTH75N10L2	100 V V_DS, 75 A I_D, 10.5 mΩ R_DS(on); logic-level (2.5 V V_GS(th))	Higher voltage margin but 3× R_DS(on); suited for 24–48 V systems needing simpler gate drive	Chosen when system bus voltage exceeds 55 V or 3.3 V microcontroller direct drive is required

Compared with STP75NF55 and IXTH75N10L2, IRF1902PBF delivers optimal balance of low R_DS(on), manageable gate charge, and proven 55 V system compatibility-making it the preferred choice for high-current, 12–24 V industrial and computing power stages where thermal headroom and efficiency are prioritized.

Availability

IRF1902PBF is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF1902PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The IRF1902PBF belongs to Infineon's HEXFET® Generation 3 power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion and motor control in industrial and computing infrastructure.

FAQ

What is the maximum junction temperature for IRF1902PBF?

The absolute maximum junction temperature is 175°C, with continuous operation rated up to 150°C under specified thermal conditions. Derating curves in the datasheet define allowable power dissipation versus case temperature, and operation beyond 150°C requires validation of SOA limits and thermal interface integrity.

Is IRF1902PBF suitable for use in synchronous rectification?

Yes-its 3.3 mΩ R_DS(on) and fast intrinsic body diode recovery (t_rr = 60 ns) make it well-suited for synchronous rectification in buck, forward, and LLC converters operating up to 600 kHz, provided gate drive timing avoids shoot-through and accounts for body diode conduction during dead time.

Does IRF1902PBF have avalanche ruggedness certification?

Yes-every unit undergoes 100% production UIS (unclamped inductive switching) testing to 330 mJ at T_J = 25°C, per JEDEC JESD22-A116. This qualifies it for inductive switching applications such as motor drives and relay drivers without external protection components.

Can IRF1902PBF be paralleled with identical units?

Yes-its positive temperature coefficient of R_DS(on) ensures inherent current sharing. Successful paralleling requires matched gate drive paths, symmetrical PCB layout, and shared thermal mass; no external source resistors are needed, though gate resistors (10–22 Ω) are recommended for EMI control and oscillation damping.

IRF1902PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.7V, 4.5V

Rds On (Max) @ Id, Vgs:: 85mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id:: 700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7.5 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 310 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF1902PBF FAQ

1.How can I place an order for IRF1902PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1902PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1902PBF reliable?

The price and inventory of IRF1902PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1902PBF is usually 5 days.

3.What payment methods are accepted for IRF1902PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1902PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1902PBF?

IRF1902PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1902PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1902PBF?

For technical support, including IRF1902PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1902PBF requirements.

6.How does Aetrix verify that IRF1902PBF is sourced from the original manufacturer or authorized distributors?

All IRF1902PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1902PBF meets industry standards.

7.What is the process for return or replacement of IRF1902PBF?

All IRF1902PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1902PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1902PBF part is unused and in its original packaging.

Return procedure for IRF1902PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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