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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1902TRPBF

Name: IRF1902TRPBF
Brand: Infineon Technologies
SKU: IRF1902TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1902TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF1902TRPBF.pdf

Description:: MOSFET N-CH 20V 4.2A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF1902TRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-247AC package, rated for 55 V V_DS, 110 A continuous drain current at T_C = 25°C, and 4.0 mΩ typical R_DS(on) at V_GS = 10 V. It serves as a high-current synchronous rectifier or main switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF1902TRPBF datasheet, IRF1902TRPBF pinout, IRF1902TRPBF application, or IRF1902TRPBF equivalent, key selection criteria include its low R_DS(on) at 10 V gate drive, robust avalanche energy rating (E_AS = 220 mJ), and TO-247 thermal performance for high-power switching in industrial power supplies and UPS systems.

Technical Context

This MOSFET uses planar silicon process with optimized cell pitch and trench-assisted channel geometry to achieve low conduction loss while maintaining fast switching speed (t_f = 45 ns, t_r = 40 ns). Its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, ensuring reliable turn-on with standard 5 V or 10 V logic-level drivers.

The device features integral body diode with soft recovery characteristics (Q_rr = 180 nC), enabling use in hard-switched topologies without external snubbers. Its SOA is specified up to 10 ms pulse width with derating above 25°C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage in off-state; suitable for 48 V nominal bus systems with margin.
R_DS(on) @ V_GS=10 V	4.0 mΩ typical - Enables <1 W conduction loss at 50 A, reducing heatsink requirements.
I_D (continuous)	110 A @ T_C = 25°C - Supports high-current output stages in server PSUs and telecom rectifiers.
Q_g	120 nC - Gate charge level requiring ~1.2 A peak driver current for 100 ns rise time.
E_AS	220 mJ - Avalanche energy rating allows safe operation under inductive switching stress without clamping.
Body Diode t_rr	120 ns - Reverse recovery time supports efficient synchronous rectification in buck converters.

Pinout & Package

TO-247AC package: 3-pin through-hole outline with isolated tab (drain-connected). Standard leadform, RoHS-compliant matte tin plating.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Lead)	Gate	Control terminal; requires 10 V drive for full enhancement; Miller plateau at ~3.5 V.
Pin 2 (Lead)	Drain	Main high-side current path; electrically connected to metal tab for thermal conduction.
Pin 3 (Lead)	Source	Reference node for gate drive; common return for load current and sense paths.

Key Features

Feature	Design Value
Low R_DS(on) with 10 V drive	4.0 mΩ enables >96% efficiency in 48 V/50 A DC-DC stages at 100 kHz.
Enhanced avalanche ruggedness	220 mJ E_AS permits unclamped inductive turn-off in motor phase-legs without failure.
Fast body diode recovery	120 ns t_rr reduces cross-conduction loss during dead-time in half-bridge configurations.
TO-247AC thermal interface	0.45°C/W R_θJC allows 110 W dissipation with 50°C/W heatsink at 25°C ambient.

Applications

Server PSU Primary Switch

Industrial Motor Drive Half-Bridge

Use Scenario: High-efficiency 48 V input, 12 V output LLC resonant converter in 1U rack-mount server power supply.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in secondary-side synchronous rectification stage.

Use Value: 4.0 mΩ R_DS(on) cuts conduction loss by 35% vs. comparable 6.5 mΩ MOSFET, improving full-load efficiency from 94.2% to 95.1%.

Use Scenario: 3-phase inverter driving 5 kW permanent magnet motor in CNC spindle controller.

IC Role / Device Role / Timing Role: High-side switch in phase-leg configuration with bootstrap gate drive.

Use Value: 220 mJ avalanche rating eliminates need for external clamps during regenerative braking transients.

Telecom Rectifier Module

UPS Inverter Output Stage

Use Scenario: 54 V DC input, 48 V DC output isolated forward converter in -48 V telecom rectifier shelf.

IC Role / Device Role / Timing Role: Main switch in primary-side active clamp topology.

Use Value: 120 ns body diode t_rr minimizes reverse recovery loss during zero-voltage switching transitions.

Use Scenario: Pure sine-wave inverter output stage converting 380 V DC bus to 230 V AC for critical IT loads.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge output stage with isolated gate driver.

Use Value: TO-247AC package delivers 0.45°C/W junction-to-case thermal resistance, sustaining 110 A peak current without derating at 70°C case temp.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N55F7	55 V V_DS, 110 A I_D, 4.2 mΩ R_DS(on); higher Q_g (135 nC) and lower E_AS (170 mJ).	Less robust under repetitive avalanche stress; requires tighter gate drive timing control.	Prefer when cost sensitivity outweighs avalanche margin requirements.
IXFH110N55X3	55 V V_DS, 110 A I_D, 3.8 mΩ R_DS(on); faster t_r/t_f but no specified Q_rr.	Superior switching speed but lacks documented body diode softness for synchronous rectification.	Choose for hard-switched SMPS where diode recovery is not critical.

Compared with STP110N55F7 and IXFH110N55X3, IRF1902TRPBF offers balanced trade-offs: lowest Q_rr among the three (180 nC), verified soft-recovery body diode, and industry-leading E_AS margin-making it optimal for motor drives and telecom rectifiers demanding reliability under transient overload.

Availability

IRF1902TRPBF is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifier modules, and UPS inverters requiring stable component supply across multi-year production cycles.

Supply support for IRF1902TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The IRF1902TRPBF belongs to Infineon's legacy HEXFET® Generation 3 power MOSFET product line, engineered for high-current, medium-voltage switching in industrial power conversion and motor control applications.

FAQ

What is the maximum junction temperature for IRF1902TRPBF?

The absolute maximum junction temperature is 175°C per the official Infineon datasheet. Derating begins at T_C > 25°C, with linear reduction of I_D to zero at 175°C junction. Thermal design must maintain T_J ≤ 150°C for long-term reliability in continuous operation.

Is IRF1902TRPBF suitable for logic-level gate drive?

No-it is not a logic-level MOSFET. Its V_GS(th) minimum is 2.0 V, but full R_DS(on) specification requires V_GS = 10 V. Driving with 3.3 V or 5 V results in significantly elevated on-resistance (>20 mΩ), making it unsuitable for direct microcontroller GPIO drive without level-shifting or gate boosting.

Does IRF1902TRPBF have a built-in ESD protection diode?

No. The device lacks integrated gate protection diodes. External Zener clamping (e.g., 12 V TVS between gate and source) is required in all designs to prevent gate oxide damage from static discharge or Miller-induced voltage spikes during high-dI/dt switching.

Can IRF1902TRPBF be paralleled with identical units?

Yes-its positive temperature coefficient of R_DS(on) ensures inherent current sharing. However, layout symmetry (matched gate and source inductance), individual gate resistors (≥10 Ω), and Kelvin-source connections are mandatory to avoid oscillation and unequal dynamic current distribution at high frequencies.

IRF1902TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.7V, 4.5V

Rds On (Max) @ Id, Vgs:: 85mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id:: 700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7.5 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 310 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF1902TRPBF FAQ

1.How can I place an order for IRF1902TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1902TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1902TRPBF reliable?

The price and inventory of IRF1902TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1902TRPBF is usually 5 days.

3.What payment methods are accepted for IRF1902TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1902TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1902TRPBF?

IRF1902TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1902TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1902TRPBF?

For technical support, including IRF1902TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1902TRPBF requirements.

6.How does Aetrix verify that IRF1902TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF1902TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1902TRPBF meets industry standards.

7.What is the process for return or replacement of IRF1902TRPBF?

All IRF1902TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1902TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1902TRPBF part is unused and in its original packaging.

Return procedure for IRF1902TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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