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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF200B211XKMA1

Name: IRF200B211XKMA1
Brand: Infineon Technologies
SKU: IRF200B211XKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF200B211XKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF200B211XKMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF200B211 from Infineon Technologies (formerly International Rectifier) is a 200V, 12A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-ruggedness switching in motor drives and DC/DC converters. It delivers 135 mΩ typical R_DS(on) at V_GS = 10 V, supports 34 A pulsed drain current, and features enhanced body diode dV/dt (32.5 V/ns) and dI/dt capability for robust synchronous rectification in resonant topologies.

For engineers reviewing the IRF200B211 datasheet, IRF200B211 pinout, IRF200B211 application, or IRF200B211 equivalent, key selection criteria include its 200V V_DS rating, 135 mΩ R_DS(on) at 7.2A/25°C, 88 mJ single-pulse avalanche energy, TO-220AB thermal resistance (R_θJC = 1.88 °C/W), and validated performance in half-bridge BLDC inverters and battery-powered DC/AC systems.

Technical Context

This MOSFET employs planar silicon technology with optimized gate oxide and epitaxial layer design to achieve improved dynamic dV/dt ruggedness and fully characterized avalanche SOA. Its body diode exhibits 68 ns reverse recovery time (T_J = 25°C) and 195 nC Q_rr, enabling reliable operation in hard-switched and resonant mode power supplies without external snubbers.

The device's gate charge profile shows 15.3 nC total Q_g (typ.), with 5.6 nC Q_gd and 5.1 nC Q_gs, supporting fast turn-on/turn-off transitions (t_r = 9.5 ns, t_f = 6.5 ns) under 2.7 Ω gate drive impedance-critical for minimizing conduction and switching losses in high-frequency DC/DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Maximum blocking voltage for use in 160–200 V bus applications like industrial inverters and telecom DC/DC stages.
R_DS(on) max	170 mΩ at V_GS = 10 V, I_D = 7.2 A, T_J = 125°C - Ensures ≤2.1 W conduction loss at 7.2 A, enabling thermally constrained PCB layouts.
I_D continuous	12 A at T_C = 25°C - Silicon-limited rating suitable for brushed/BLDC motor drivers up to ~200 W output with heatsinking.
E_AS	88 mJ single-pulse avalanche energy - Supports unclamped inductive switching in half-bridge configurations without failure at rated current.
Q_g	15.3 nC typ. - Enables efficient 100–500 kHz switching with standard gate drivers (e.g., IR2110) while limiting driver power dissipation.
dv/dt rating	32.5 V/ns (body diode) - Prevents spurious turn-on during high-speed commutation in synchronous rectifiers and LLC resonant converters.
R_θJC	1.88 °C/W - Allows direct mounting to heatsinks for sustained 80 W power dissipation at T_C = 25°C without derating.

Pinout & Package

IRF200B211 uses the industry-standard TO-220AB package with isolated tab (drain-connected), offering mechanical robustness and proven thermal performance in high-power discrete applications.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive to fully enhance channel; requires <2.7 Ω series resistance to suppress ringing in high-dI/dt switching.
D (Drain)	High-side power terminal	Connected to heatsink via isolated tab; carries full load current and withstands 200 V transients in bridge-leg configurations.
S (Source)	Reference node / return path	Serves as local ground reference for gate drive; must be low-inductance routed to minimize shoot-through risk in half-bridge layouts.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	32.5 V/ns at T_J = 175°C - Eliminates need for external diode in synchronous rectifier designs operating above 200 kHz.
Fully characterized avalanche SOA	88 mJ E_AS (tested), 72 mJ (thermally limited) - Enables reliable unclamped inductive switching in motor control H-bridges without snubber networks.
Low C_oss eff. (ER)	66 pF - Reduces turn-off energy loss in resonant LLC converters by minimizing capacitive discharge overhead.
Lead-free & RoHS compliant	Halogen-free construction - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for reflow compatibility and environmental compliance.
Improved dynamic dV/dt ruggedness	Validated per JEDEC JESD22-A114 - Prevents false triggering during fast transient events in automotive and industrial power modules.

Applications

Brushed Motor Drive

BLDC Inverter Stage

Use Scenario: 24–48 V DC brushed motor control in cordless power tools and portable medical pumps.

IC Role / Device Role / Timing Role: High-side switch in H-bridge topology, handling bidirectional 12 A peak current with PWM frequencies up to 20 kHz.

Use Value: 135 mΩ R_DS(on) limits I²R loss to <2 W at 7.2 A, enabling compact heatsink-free designs below 100 W output.

Use Scenario: Low-side switching in three-phase BLDC inverters for e-bike controllers and HVAC fans.

IC Role / Device Role / Timing Role: Synchronous rectifier in active freewheeling phase, leveraging fast 68 ns t_rr and 32.5 V/ns dv/dt immunity.

Use Value: Body diode recovery characteristics reduce switching losses by 35% vs. standard MOSFETs, improving inverter efficiency from 92% to 94.5% at 500 W.

Resonant DC/DC Converter

DC/AC Inverter Half-Bridge

Use Scenario: Primary-side switch in 300–500 kHz LLC resonant converter for server PSUs and LED drivers.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) device with low C_oss eff. (66 pF) and 15.3 nC Q_g for minimal dead-time loss.

Use Value: 66 pF C_oss eff. (ER) reduces capacitive turn-off energy by 22% versus comparable 200 V MOSFETs, extending ZVS range across 20–100% load.

Use Scenario: High-side switch in 100–200 V DC/AC inverter stage for solar microinverters and UPS systems.

IC Role / Device Role / Timing Role: Fast-switching element in half-bridge leg, rated for 200 V bus with 34 A pulsed current capability.

Use Value: 88 mJ E_AS enables safe operation during grid fault transients without external clamping, reducing BOM count by one TVS diode per leg.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 200 V N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	R_DS(on) = 180 mΩ (max), E_AS = 55 mJ, Q_g = 22 nC	Lower avalanche energy and higher gate charge increase switching loss in resonant converters.	Acceptable for brushed motor drives where avalanche stress is minimal and gate drive strength is sufficient.
IXTP20N20P	R_DS(on) = 160 mΩ (max), E_AS = 75 mJ, C_oss = 75 pF	Higher C_oss reduces ZVS margin in LLC topologies above 300 kHz.	Preferred for linear-regulator replacement or low-frequency (<100 kHz) inverters where thermal margin outweighs switching optimization.

Compared with STP20NM20 and IXTP20N20P, IRF200B211 offers superior avalanche ruggedness (88 mJ), lower gate charge (15.3 nC), and tighter R_DS(on) tolerance (135–170 mΩ), making it optimal for high-reliability, high-frequency motor drives and resonant DC/DC converters where dynamic stress and efficiency are critical.

Availability

IRF200B211 is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverter stages, and resonant DC/DC converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF200B211 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon-based power devices and system-level energy efficiency solutions.

The StrongIRFET™ product line delivers rugged, application-optimized power MOSFETs for motor control, industrial power conversion, and renewable energy systems-designed to exceed JEDEC reliability standards while simplifying thermal and layout design.

FAQ

What is the maximum continuous drain current for IRF200B211 at 100°C case temperature?

The maximum continuous drain current is 9.0 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This reflects silicon-limited conduction capacity under thermal constraint, not package-limited current. Derating follows a linear factor of 0.53 W/°C beyond 25°C case temperature, consistent with its 80 W P_D rating at T_C = 25°C.

Does IRF200B211 require a gate resistor for safe operation in a half-bridge configuration?

Yes-a gate resistor of ≤2.7 Ω is recommended to dampen ringing and limit peak gate current during fast switching. The device's 2.7 Ω typical gate resistance and 15.3 nC total gate charge make it sensitive to parasitic inductance; omitting the resistor risks oscillation, shoot-through, or gate oxide overstress in high-dV/dt environments such as BLDC inverters.

How does the body diode performance of IRF200B211 compare to standard MOSFETs in synchronous rectification?

Its body diode achieves 32.5 V/ns peak recovery dv/dt at 175°C and 68 ns t_rr at 25°C-significantly higher than standard MOSFETs (typically <15 V/ns and >100 ns). This enables reliable synchronous rectification in 200–500 kHz DC/DC converters without cross-conduction or voltage overshoot, reducing forward drop-related losses by up to 40% versus Schottky alternatives at 100°C junction temperature.

Is IRF200B211 suitable for automotive under-hood applications?

No-it is not AEC-Q101 qualified and lacks extended temperature validation beyond −55°C to +175°C operating range. While its 175°C T_J(max) meets under-hood thermal requirements, Infineon does not certify this part for automotive use due to missing stress-test documentation (e.g., HTGB, uHAST) and lack of PPAP support. Industrial motor drives and telecom power supplies remain its validated application space.

IRF200B211XKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 170mOhm @ 7.2A, 10V

Vgs(th) (Max) @ Id:: 4.9V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 790 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 80W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-904

IRF200B211XKMA1 FAQ

1.How can I place an order for IRF200B211XKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF200B211XKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF200B211XKMA1 reliable?

The price and inventory of IRF200B211XKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF200B211XKMA1 is usually 5 days.

3.What payment methods are accepted for IRF200B211XKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF200B211XKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF200B211XKMA1?

IRF200B211XKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF200B211XKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF200B211XKMA1?

For technical support, including IRF200B211XKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF200B211XKMA1 requirements.

6.How does Aetrix verify that IRF200B211XKMA1 is sourced from the original manufacturer or authorized distributors?

All IRF200B211XKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF200B211XKMA1 meets industry standards.

7.What is the process for return or replacement of IRF200B211XKMA1?

All IRF200B211XKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF200B211XKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF200B211XKMA1 part is unused and in its original packaging.

Return procedure for IRF200B211XKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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