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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF200S234

Name: IRF200S234
Brand: Infineon Technologies
SKU: IRF200S234
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF200S234

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF200S234.pdf

Description:: MOSFET N-CH 200V 90A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:8,797

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Product details

Overview

IRF200S234 from Infineon is a 200 V, 90 A D2-PAK N-channel enhancement-mode MOSFET optimized for high-current switching in motor drives and power conversion. It features 14 mΩ typical R_DS(on), 108–162 nC total gate charge, and robust avalanche energy rating of 574 mJ (thermally limited), enabling reliable operation in half-bridge inverters and synchronous rectifiers.

For engineers reviewing the IRF200S234 datasheet, IRF200S234 pinout, IRF200S234 application, or IRF200S234 equivalent, key selection criteria include its 200 V V_DSS, 90 A continuous drain current at T_C = 25°C, 0.36 °C/W R_θJC, body diode reverse recovery time (117 ns at T_J = 25°C), and D2-PAK thermal performance in high-power DC/AC inverters.

Technical Context

This MOSFET employs trench-gate silicon technology with enhanced body diode dV/dt and di/dt capability (26 V/ns peak dv/dt at T_J = 175°C, IS = 51 A). Its fully characterized avalanche SOA supports repetitive unclamped inductive switching up to 312 A pulsed drain current.

The device integrates low-output capacitance (C_{oss eff.(ER)} = 356 pF) and optimized gate charge distribution (Q_gd = 37 nC, Q_gs = 26 nC), enabling fast, controlled turn-on/off transitions (t_r = 58 ns, t_f = 37 ns) in resonant-mode and hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Withstands 200 V drain-source blocking voltage before avalanche onset.
R_DS(on) max	16.9 mΩ - Maximum on-resistance at V_GS = 10 V, ID = 51 A, limiting conduction loss in 90 A continuous designs.
I_D continuous	90 A - Continuous drain current rating at T_C = 25°C, defining PCB heatsink sizing baseline.
E_AS	574 mJ - Single-pulse avalanche energy (thermally limited), supporting inductive load switching without external snubbers.
Q_g	108–162 nC - Total gate charge range determines driver strength requirement and switching loss trade-off.
t_r/t_f	58 ns / 37 ns - Rise/fall times at V_DD = 100 V, I_D = 51 A, enabling >100 kHz hard-switching in DC/DC converters.
R_θJC	0.36 °C/W - Junction-to-case thermal resistance defines minimum heatsink interface performance for thermal management.

Pinout & Package

IRF200S234 is housed in a surface-mount D2-PAK (TO-263) package with exposed drain pad for thermal and electrical connection. The package supports high-current PCB mounting with solderable tab and standard FR-4 footprint per Infineon AN-994.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive to fully enhance channel; threshold V_GS(th) = 3.0–5.0 V.
D (Drain)	High-side switch node	Connected to exposed metal tab; carries full load current and must be thermally coupled to heatsink.
S (Source)	Reference return path	Common return for gate drive and load current; establishes local ground reference for driver ICs.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	26 V/ns at T_J = 175°C - Enables stable commutation in BLDC and OR-ing applications without parasitic turn-on.
Fully characterized avalanche SOA	574 mJ single-pulse E_AS - Eliminates need for external clamping in inductive switching circuits like motor phase legs.
Pb-free, RoHS & halogen-free	Compliant with JEDEC J-STD-020 reflow profile - Supports lead-free manufacturing without derating or process change.
Low C_{oss eff.(ER)}	356 pF - Reduces turn-off energy loss in resonant LLC and ZVS topologies operating above 300 kHz.

Applications

Brushed Motor Drive

BLDC Motor Drive

Use Scenario: H-bridge control of 24–48 V DC brushed motors in power tools and industrial actuators.

IC Role / Device Role / Timing Role: High-current half-bridge switch handling bidirectional 90 A peak loads with fast PWM switching.

Use Value: 14 mΩ R_DS(on) minimizes I²R heating during stall conditions; 574 mJ E_AS withstands back-EMF transients.

Use Scenario: Three-phase inverter stage for 200 V battery-powered e-bikes and scooters.

IC Role / Device Role / Timing Role: Low-side switching element in 6-step commutation with body-diode freewheeling.

Use Value: 26 V/ns diode dv/dt rating prevents false triggering during high di/dt phase transitions.

Synchronous Rectification

DC/AC Inverter

Use Scenario: Secondary-side switching in isolated 200 V output telecom and server PSUs.

IC Role / Device Role / Timing Role: Active replacement of Schottky diode in LLC resonant converter output stage.

Use Value: 1.3 V V_SD forward drop at 51 A reduces conduction loss by >40% vs. 45 V Schottky at same current.

Use Scenario: Full-bridge inverter stage converting 200 V DC bus to 110/230 V AC in solar microinverters.

IC Role / Device Role / Timing Role: High-voltage, high-current switching device in hard-switched or phase-shifted topology.

Use Value: 0.36 °C/W R_θJC enables direct heatsink mounting for 90 A RMS current handling at <100°C case temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 200 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP200NF20	R_DS(on) max = 20 mΩ; Q_g = 140 nC; E_AS = 520 mJ	Higher conduction loss; slightly lower avalanche margin	Acceptable where board space allows larger heatsink or lower peak current.
IXFH20N20X3	R_DS(on) max = 18.5 mΩ; Q_g = 65 nC; TO-247 package	Lower gate charge but through-hole mounting; no D2-PAK footprint compatibility	Preferred for prototyping with breadboard-compatible sockets or legacy TO-247 layouts.

Compared with STP200NF20 and IXFH20N20X3, the IRF200S234 delivers the lowest R_DS(on) (14 mΩ typ.) in D2-PAK, enabling higher efficiency in space-constrained motor drives while maintaining superior avalanche ruggedness and surface-mount manufacturability.

Availability

IRF200S234 is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply and long-term production continuity.

Supply support for IRF200S234 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control solutions.

The StrongIRFET™ product line targets high-efficiency, high-reliability power switching in motor control and power conversion, emphasizing ruggedness, low R_DS(on), and fully characterized SOA.

FAQ

What is the maximum junction temperature for continuous operation?

The IRF200S234 has an operating junction temperature range of –55°C to +175°C. For continuous operation, thermal design must ensure T_J remains ≤175°C under worst-case ambient and power dissipation conditions, using R_θJC = 0.36 °C/W and appropriate heatsinking.

Does this MOSFET require a gate resistor for safe switching?

Yes - a gate resistor (typically 2.7 Ω, per datasheet test condition) is required to control dV/dt and prevent oscillation. Without it, excessive ringing and shoot-through risk arise due to low gate resistance (2.4 Ω) and high Q_gd/Q_gs ratio, especially in bridge configurations.

Can the body diode be used for freewheeling in BLDC applications?

Yes - the body diode is fully characterized for di/dt (1899 A/µs) and dv/dt (26 V/ns), making it suitable for freewheeling in BLDC six-step commutation. Reverse recovery time is 117 ns at 25°C, with Q_rr = 563 nC, enabling efficient operation up to ~20 kHz PWM frequencies.

Is the D2-PAK package compatible with standard reflow profiles?

Yes - the IRF200S234 is qualified for Pb-free reflow per JEDEC J-STD-020, with peak temperature tolerance up to 260°C for 10 seconds. Its D2-PAK footprint aligns with IPC-7351B standards and supports automated optical inspection and solder paste volume control.

IRF200S234 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 16.9mOhm @ 51A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 162 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6484 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 417W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IRF200S234 FAQ

1.How can I place an order for IRF200S234 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF200S234 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF200S234 reliable?

The price and inventory of IRF200S234 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF200S234 is usually 5 days.

3.What payment methods are accepted for IRF200S234?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF200S234 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF200S234?

IRF200S234 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF200S234 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF200S234?

For technical support, including IRF200S234 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF200S234 requirements.

6.How does Aetrix verify that IRF200S234 is sourced from the original manufacturer or authorized distributors?

All IRF200S234 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF200S234 meets industry standards.

7.What is the process for return or replacement of IRF200S234?

All IRF200S234 units undergo pre-shipment inspection (PSI). If there is an issue with IRF200S234, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF200S234 part is unused and in its original packaging.

Return procedure for IRF200S234:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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