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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF2204LPBF

Name: IRF2204LPBF
Brand: Infineon Technologies
SKU: IRF2204LPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF2204LPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF2204LPBF.pdf

Description:: MOSFET N-CH 40V 170A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:8,718

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Product details

Overview

IRF2204LPBF from Infineon Technologies is a 40V, 170A N-channel D2Pak (TO-262) HEXFET® Power MOSFET with 3.6mΩ R_DS(on) at V_GS = 10V, 175°C maximum junction temperature, and 460mJ single-pulse avalanche energy-designed for high-current industrial motor drive inverters and DC-DC power stages.

For engineers reviewing the IRF2204LPBF datasheet, IRF2204LPBF pinout, IRF2204LPBF application, or IRF2204LPBF equivalent, key selection criteria include continuous drain current derating above 25°C, gate charge (130–200nC), body diode reverse recovery (68–100ns), thermal resistance (R_θJC = 0.75°C/W), and avalanche ruggedness under unclamped inductive switching.

Technical Context

This MOSFET employs advanced planar silicon processing to achieve ultra-low on-resistance per die area while maintaining robust safe operating area (SOA) up to 100µs at 175°C. Its dynamic dv/dt rating and fast switching (t_r = 140ns, t_f = 110ns) support high-frequency hard-switched topologies.

The integrated body diode features low forward voltage (V_SD ≤ 1.3V at 130A) and controlled reverse recovery (Q_rr = 120–180nC), enabling reliable freewheeling in synchronous rectification and H-bridge configurations without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40V - Maximum blocking voltage before avalanche onset; defines usable bus voltage range in 24–36V systems.
R_DS(on)	3.6mΩ max @ V_GS = 10V, I_D = 130A - Directly determines conduction loss (P_cond ≈ I² × R) in high-current paths.
I_D @ T_C = 25°C	170A - Continuous current capability with heatsink at case temperature of 25°C; sets minimum heatsink sizing baseline.
E_AS	460mJ - Single-pulse avalanche energy rating; enables robustness against inductive turn-off transients without snubbers.
Q_g	130–200nC - Total gate charge defining driver strength requirement and switching loss trade-off.
R_θJC	0.75°C/W - Junction-to-case thermal resistance; critical for calculating ΔT_J rise under steady-state power dissipation.
t_r/t_f	140ns/110ns - Rise/fall times at V_DD = 20V, I_D = 130A, R_G = 2.5Ω; constrains minimum practical switching frequency.

Pinout & Package

IRF2204LPBF uses the D2Pak (TO-262) surface-mount package with isolated tab, optimized for high-current PCB mounting and thermal transfer via soldered tab to copper pour or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Electrically connected to exposed copper tab; must be electrically isolated from chassis unless referenced to system ground.
Source	Current return path & reference node	Low-inductance connection point for source sensing, gate driver return, and current measurement shunt placement.
Gate	Control terminal for channel modulation	High-impedance input requiring <200nC total charge; sensitive to ESD and requires gate resistor for ringing suppression.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	3.6mΩ max enables <1W conduction loss at 130A, reducing heatsink mass and improving power density in motor drives.
175°C rated junction temperature	Allows operation in sealed enclosures or high-ambient environments without derating, extending reliability under thermal stress.
Repetitive avalanche capability	Rated for repeated unclamped inductive switching up to T_Jmax, eliminating need for external clamping circuits in H-bridge braking.
Fast body diode recovery	trr = 68–100ns with Qrr = 120–180nC minimizes commutation loss and EMI during synchronous rectification transitions.
Lead-free and RoHS-compliant	Meets IPC-J-STD-020D reflow profile requirements with peak solder temperature up to 300°C for 10 seconds.

Applications

Industrial Motor Inverter

High-Current DC-DC Converter

Use Scenario: Three-phase 24–36V BLDC motor inverter stage handling peak currents >150A per phase.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 6-step commutation; operates at 8–20kHz PWM frequency.

Use Value: Low R_DS(on) reduces I²R losses by >30% vs. legacy 5mΩ MOSFETs, lowering thermal design burden and enabling smaller heatsinks.

Use Scenario: 48V-to-12V bidirectional buck-boost converter in automotive auxiliary power supply.

IC Role / Device Role / Timing Role: Primary switch in synchronous rectified topology; handles continuous 120A output with 95% efficiency target.

Use Value: Fast switching and low Q_g reduce gate drive loss and enable higher frequency operation, shrinking magnetics volume by ~25%.

Uninterruptible Power Supply (UPS)

Industrial Battery Management System

Use Scenario: Output inverter stage in 3kVA online UPS delivering clean 230VAC from 48VDC battery bank.

IC Role / Device Role / Timing Role: Half-bridge leg switch subjected to repetitive short-circuit and overload conditions.

Use Value: 460mJ E_AS and SOA-rated pulse current (850A) ensure survival during grid fault events without sacrificial fusing.

Use Scenario: Cell-balancing and main contactor switching in 48V lithium-ion battery pack for material handling equipment.

IC Role / Device Role / Timing Role: Solid-state relay replacement for high-cycle, high-current load switching (≥100k operations).

Use Value: 175°C T_J rating and low thermal resistance allow direct PCB mounting without mechanical relays, improving long-term contact reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 3.7mΩ, Q_g = 145nC, same D2Pak package, lower E_AS (320mJ)	Suitable for lower-stress DC-DC but marginal for repetitive avalanche in motor braking	Prefer when gate drive capability is limited and avalanche stress is infrequent
IXTH170N04S2	R_DS(on) = 3.2mΩ, Q_g = 220nC, TO-247 package, higher thermal mass	Better conduction loss but slower switching and larger footprint; requires mechanical mounting	Select for highest efficiency in low-frequency (<10kHz), high-reliability industrial systems where board space is not constrained

Compared with STL220N4F7AG and IXTH170N04S2, IRF2204LPBF delivers optimal balance of low R_DS(on), moderate Q_g, proven avalanche ruggedness, and compact D2Pak thermal interface-making it preferred for space-constrained, high-dynamic-duty motor control designs.

Availability

IRF2204LPBF is available at Aetrix Electronics and suitable for industrial motor drives, high-current DC-DC converters, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.

Supply support for IRF2204LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRF HEXFET® product line was engineered specifically for high-efficiency, high-reliability power conversion in industrial motor drives, UPS systems, and renewable energy inverters-emphasizing ruggedness, thermal performance, and manufacturability.

FAQ

What is the maximum allowable gate-to-source voltage for IRF2204LPBF?

The absolute maximum V_GS is ±20V. Operation beyond this risks permanent gate oxide damage. For reliable switching, gate drive should be clamped between 0V and +12V to +15V, with negative turn-off bias recommended only if required for noise immunity in high-dv/dt environments.

Can IRF2204LPBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink to prevent thermal runaway. Derate total current by 15% for two devices and 25% for three or more.

Is the drain tab electrically isolated in the D2Pak package?

No-the drain is internally connected to the exposed copper tab. Electrical isolation from the PCB or heatsink must be achieved using insulating thermal pads or ceramic washers. Failure to isolate may cause short circuits in grounded-chassis systems.

What is the typical reverse recovery time of the body diode?

The body diode's reverse recovery time (t_rr) is 68–100ns at T_J = 25°C, I_F = 130A, and di/dt = 100A/µs. This value increases with junction temperature and decreases with higher di/dt; design margins should assume 100ns for EMI and loss estimation.

IRF2204LPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 170A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.6mOhm @ 130A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 200 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5890 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF2204LPBF FAQ

1.How can I place an order for IRF2204LPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF2204LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF2204LPBF reliable?

The price and inventory of IRF2204LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2204LPBF is usually 5 days.

3.What payment methods are accepted for IRF2204LPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2204LPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF2204LPBF?

IRF2204LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF2204LPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF2204LPBF?

For technical support, including IRF2204LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2204LPBF requirements.

6.How does Aetrix verify that IRF2204LPBF is sourced from the original manufacturer or authorized distributors?

All IRF2204LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2204LPBF meets industry standards.

7.What is the process for return or replacement of IRF2204LPBF?

All IRF2204LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF2204LPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF2204LPBF part is unused and in its original packaging.

Return procedure for IRF2204LPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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