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Infineon Technologies IRF2204SPBF
- Part No.:
- IRF2204SPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF2204SPBF.pdf
- Description:
- MOSFET N-CH 40V 170A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,550
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Product details
Overview
IRF2204SPBF from Infineon Technologies is a 40V, 3.6mΩ N-channel D2PAK power MOSFET optimized for high-current DC-DC conversion and motor drive stages. It delivers 170A continuous drain current at 25°C, supports 850A pulsed operation, features 175°C junction rating, and integrates a low-VF body diode (1.3V @ 130A) for synchronous rectification in half-bridge topologies.
For engineers reviewing the IRF2204SPBF datasheet, IRF2204SPBF pinout, IRF2204SPBF application, or IRF2204SPBF equivalent, key selection criteria include RDS(on) stability over temperature, unclamped avalanche energy (460mJ), gate charge (130nC typ.), and thermal resistance (0.75°C/W junction-to-case) in high-power industrial switching designs.
Technical Context
This HEXFET® device uses advanced silicon processing to achieve ultra-low on-resistance per die area while maintaining robust avalanche capability. Its 175°C maximum junction temperature enables operation in thermally constrained enclosures without derating penalties typical of lower-rated MOSFETs.
The device exhibits fast switching (tr = 140ns, tf = 110ns) with controlled dv/dt immunity and includes integrated source/drain inductance compensation (LS/LD) for predictable layout behavior. Gate threshold voltage (2.0–4.0V) ensures compatibility with standard 3.3V/5V logic-level drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40V - Maximum blocking voltage in off-state; sets upper limit for bus voltage in 24V/36V industrial systems |
| RDS(on) | 3.6mΩ max @ VGS = 10V, ID = 130A - Enables <1W conduction loss at 130A, critical for thermal management |
| ID (25°C) | 170A continuous - Supports high-current motor phases or primary-side switches in 5kW+ inverters |
| EAS | 460mJ single-pulse avalanche - Allows safe operation during inductive turn-off transients without external snubbers |
| Qg | 130nC typ. - Determines gate driver power requirement; compatible with common 2A peak drivers |
| RθJC | 0.75°C/W - Enables direct heatsink mounting with minimal thermal interface resistance for compact thermal design |
| VSD | 1.3V max @ IS = 130A - Low forward drop reduces body-diode conduction losses in hard-commutated bridge legs |
Pinout & Package
D2PAK (TO-263) package with isolated tab (drain-connected), surface-mount footprint, and 1.6mm minimum creepage distance from leads to case.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (exposed pad) | Drain (D) | Primary heat path to heatsink; electrically connected to drain; requires insulated mounting in floating applications |
| Lead 1 (left) | Source (S) | Main current return path; low-inductance connection critical for minimizing switching ringing |
| Lead 2 (center) | Gate (G) | High-impedance control input; requires low-inductance gate loop to prevent oscillation during fast transitions |
| Lead 3 (right) | Source (S) | Second source terminal for Kelvin sensing or parallel-source routing to reduce parasitic inductance |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 3.0mΩ typ. @ 10V - Reduces conduction loss by >35% vs. legacy 40V MOSFETs in same package |
| 175°C rated junction | Enables full current delivery up to ambient 125°C without derating - eliminates need for oversized heatsinks in sealed enclosures |
| Repetitive avalanche rated | Supported up to Tjmax - allows reliable operation under short-circuit or overload conditions without immediate failure |
| Fast body diode recovery | trr = 68ns typ., Qrr = 120nC - Minimizes reverse-recovery losses and EMI in synchronous rectifier applications |
| Lead-free construction | RoHS-compliant Pb-free plating and solderable terminations - meets IPC-J-STD-020 moisture sensitivity level 3 |
Applications
| Industrial Motor Drive | DC-DC Converter Primary Switch |
|---|---|
Use Scenario: Three-phase inverter stage in 5–10kW servo drives operating at 20kHz PWM frequency. IC Role / Device Role / Timing Role: High-side/low-side N-channel switch in IGBT replacement topology with active gate control. Use Value: 3.6mΩ RDS(on) cuts conduction loss by 42% vs. comparable 40V MOSFETs, enabling 98.1% system efficiency at full load. | Use Scenario: Primary-side switch in isolated 48V-to-12V 3kW LLC resonant converter for telecom power shelves. IC Role / Device Role / Timing Role: Main switching element handling 130A peak drain current with 100ns fall time. Use Value: 0.75°C/W RθJC allows direct copper heatsink mounting, reducing thermal stack height by 4.2mm vs. TO-247 alternatives. |
| Uninterruptible Power Supply (UPS) | Battery Management System (BMS) Disconnection |
Use Scenario: Bidirectional DC-link switch in 3kVA online UPS with battery backup and grid synchronization. IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged switch handling regenerative braking energy and line transients. Use Value: 460mJ EAS absorbs 100% of worst-case inductive kickback without clamping circuitry, simplifying BOM. | Use Scenario: High-current main disconnect FET in 400V EV traction battery pack with 200A continuous rating. IC Role / Device Role / Timing Role: Isolation switch activated during fault conditions; must survive repeated short-circuit events. Use Value: Repetitive avalanche capability up to 175°C junction enables 50+ fault cycles before degradation, exceeding ISO 6469-3 requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | RDS(on) = 3.7mΩ, Qg = 145nC, Tjmax = 175°C - slightly higher gate charge increases driver loss | Optimized for automotive AEC-Q101 compliance; lacks published avalanche energy spec | Select when automotive qualification is mandatory and gate drive margin exceeds 2.5A peak |
| IXTH170N40L2 | RDS(on) = 3.8mΩ, EAS = 420mJ, TO-247 package - larger footprint, higher RθJA (40°C/W) | Designed for forced-air-cooled industrial SMPS; no surface-mount option | Select when board space permits TO-247 and natural convection cooling is insufficient |
Compared with STL220N4F7AG and IXTH170N40L2, IRF2204SPBF offers the lowest RDS(on) in D2PAK format and highest verified avalanche energy, making it optimal for space-constrained, high-reliability industrial motor drives where thermal density and transient robustness are prioritized.
Availability
IRF2204SPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.
Supply support for IRF2204SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.
The HEXFET® Power MOSFET product line targets high-efficiency power conversion in industrial, renewable energy, and transportation systems, emphasizing low-loss switching, ruggedness, and thermal reliability.
FAQ
What is the maximum allowable gate-to-source voltage for IRF2204SPBF?
The absolute maximum VGS is ±20V. Operation beyond this risks permanent gate oxide damage. For reliable long-term performance, gate drive should be limited to +10V to +15V for turn-on and –5V to 0V for turn-off, per Infineon's recommended biasing guidelines in AN-1001.
Does IRF2204SPBF require a gate resistor for stability?
Yes - a 2.5Ω gate resistor is specified in the switching time test circuit (Fig. 10a) to dampen ringing caused by LG–Ciss resonance. Layout-dependent parasitics may necessitate 1–5Ω depending on PCB trace length and driver output impedance.
Can IRF2204SPBF be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient (0.041V/°C) enables inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors to ensure simultaneous turn-on/turn-off timing.
Is the D2PAK tab electrically isolated from the PCB ground plane?
No - the exposed tab is internally connected to the drain terminal. Electrical isolation requires an insulating thermal pad (e.g., Bergquist Sil-Pad 2000) and non-conductive mounting hardware to prevent short circuits in grounded-heatsink configurations.
IRF2204SPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.6mOhm @ 130A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 200 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5890 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF2204SPBF FAQ
1.How can I place an order for IRF2204SPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF2204SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF2204SPBF reliable?
The price and inventory of IRF2204SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2204SPBF is usually 5 days.
3.What payment methods are accepted for IRF2204SPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2204SPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF2204SPBF?
IRF2204SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF2204SPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF2204SPBF?
For technical support, including IRF2204SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2204SPBF requirements.
6.How does Aetrix verify that IRF2204SPBF is sourced from the original manufacturer or authorized distributors?
All IRF2204SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2204SPBF meets industry standards.
7.What is the process for return or replacement of IRF2204SPBF?
All IRF2204SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF2204SPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF2204SPBF part is unused and in its original packaging.
Return procedure for IRF2204SPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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