Infineon Technologies IRF2804

Overview

IRF2804 from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, rated for 40 V V_DS, 2.3 mΩ R_DS(on) at V_GS = 10 V and 75 A continuous drain current (package-limited), with 175°C maximum junction temperature and 1080 A pulsed drain capability. It serves as a high-current, low-loss main switch in automotive DC-DC converters, motor control inverters, and battery protection circuits.

For engineers reviewing the IRF2804 datasheet, IRF2804 pinout, IRF2804 application, or IRF2804 equivalent, key selection criteria include its 2.3 mΩ on-resistance at 10 V gate drive, 670 mJ single-pulse avalanche energy rating, 175°C thermal limit, and validated repetitive avalanche performance up to T_jmax - critical for inductive load switching reliability in harsh environments.

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction losses while maintaining robust safe operating area (SOA) across pulse widths from 10 µs to 100 ms. Its 0.45 °C/W junction-to-case thermal resistance enables high-power operation with passive heatsinking.

The device integrates a fast-recovery body diode (t_rr = 56–84 ns, Q_rr = 67–100 nC) and exhibits low gate charge (Q_g = 160–240 nC), supporting efficient high-frequency switching in synchronous rectification and PWM motor drives.

Key Specifications

Pinout & Package

IRF2804 uses the TO-220AB package with isolated tab (drain-connected). Mounting screw torque: 10 lbf·in (1.1 N·m); soldering temperature limit: 300°C for 10 seconds at 1.6 mm from case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP40NF10L and IXTH30N50L, IRF2804 delivers superior thermal performance (175°C T_jmax, 0.45 °C/W R_θJC) and lowest conduction loss in the 40 V class, making it optimal for space-constrained, high-current automotive power stages where efficiency and ruggedness are co-prioritized.

Availability

IRF2804 is available at Aetrix Electronics and suitable for automotive DC-DC converters, brushless DC motor inverters, and battery protection circuits requiring stable component supply across extended production lifecycles.

Supply support for IRF2804 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with headquarters in Munich, Germany.

The IRF2804 belongs to the HEXFET® Automotive Power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine control units, battery management systems, and electrified vehicle subsystems.

FAQ

What is the maximum continuous drain current for IRF2804 at 100°C case temperature?

The IRF2804 supports 200 A continuous drain current at T_C = 100°C under V_GS = 10 V bias, as specified in Figure 9 of the official datasheet. This value reflects silicon-limited conduction capability and assumes adequate heatsinking to maintain case temperature at 100°C.

Does IRF2804 have a built-in body diode, and what are its key parameters?

Yes, IRF2804 integrates a monolithic p-n junction body diode with V_SD = 1.3 V at I_S = 75 A and T_J = 25°C, reverse recovery time t_rr = 56–84 ns, and reverse recovery charge Q_rr = 67–100 nC. These values are measured under standardized conditions (I_F = 75 A, V_DD = 20 V, di/dt = 100 A/µs).

Can IRF2804 be used in parallel configurations, and what precautions apply?

IRF2804 supports paralleling due to its positive R_DS(on) temperature coefficient (see Fig. 10), which promotes current sharing. Required precautions include matched gate drive impedance (<5 Ω per device), symmetrical PCB layout, and individual source resistors (0.01 Ω) for dynamic balancing - verified in AN-1001 application note.

What is the gate threshold voltage range, and how does it vary with temperature?

V_GS(th) ranges from 2.0 V to 4.0 V at T_J = 25°C (I_D = 250 µA), decreasing linearly to ~1.3 V at 175°C (Fig. 14). This negative temperature coefficient necessitates gate drive designs that maintain ≥10 V over full temperature range to ensure full enhancement and avoid linear-mode operation.