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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF2804S-7PPBF

Name: IRF2804S-7PPBF
Brand: Infineon Technologies
SKU: IRF2804S-7PPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF2804S-7PPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Datasheet:: IRF2804S-7PPBF.pdf

Description:: MOSFET N-CH 40V 160A D2PAK

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Product details

Overview

IRF2804S-7PPBF from Infineon Technologies (formerly International Rectifier) is a 40V, 160A N-channel enhancement-mode HEXFET® Power MOSFET in D²PAK (TO-263) package, featuring 1.2–1.6 mΩ R_DS(on) at V_GS = 10 V, 175°C maximum junction temperature, and 105 ns fall time. It serves as a high-current synchronous rectifier or primary-side switch in DC-DC converters and motor drives.

For engineers reviewing the IRF2804S-7PPBF datasheet, IRF2804S-7PPBF pinout, IRF2804S-7PPBF application, or IRF2804S-7PPBF equivalent, key selection criteria include its ultra-low on-resistance, repetitive avalanche rating up to T_jmax, fast switching performance (t_r = 150 ns, t_f = 105 ns), and body diode recovery characteristics (Q_rr = 48–72 nC, t_rr = 43–65 ns).

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction losses while maintaining robust thermal and avalanche capability. Its low gate charge (Q_g = 170–260 nC) and Miller charge (Q_gd = 71 nC) support high-frequency operation in hard-switched topologies. The device integrates a co-packaged body diode with controlled reverse recovery for reduced switching loss in synchronous buck stages.

Thermal design is enabled by a specified R_θJC of 0.50°C/W and R_θJA of 40°C/W on PCB mount. Repetitive avalanche energy (E_AR) is characterized across pulse width and starting junction temperature, with validated operation up to 1000 mJ at T_j = 25°C and 200 mJ at T_j = 125°C per Figure 16.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum drain-source blocking voltage; sets upper limit for bus voltage in 12–24 V systems.
R_DS(on)	1.2–1.6 mΩ @ V_GS = 10 V - Enables <1.3 W conduction loss at 160 A, critical for high-efficiency power stages.
I_D	160 A @ T_C = 25°C - Continuous current rating under ideal heatsinking; derates to 136 A at 100°C case temperature.
Q_g	170–260 nC - Total gate charge determines driver strength requirement; impacts switching loss and gate drive power.
t_f	105 ns - Fast fall time reduces turn-off loss and EMI generation in high-frequency SMPS designs.
E_AS	630 mJ - Single-pulse avalanche energy rating confirms ruggedness against inductive load transients.
Q_rr	48–72 nC - Body diode reverse recovery charge directly affects crossover loss in synchronous rectification.

Pinout & Package

IRF2804S-7PPBF uses the D²PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard S-D-G order (Source–Drain–Gate) when viewed from top with marking side up and tab facing away.

Pin/Terminal	Circuit Role	Design Meaning
Tab / Pin 2 (Drain)	Main power output terminal	Electrically and thermally connected to internal die drain; must be soldered to large copper pour for heat dissipation.
Pin 1 (Source)	Reference node for gate drive and current return	Low-inductance source path essential for stable gate control; LS = 7.5 nH limits high-di/dt ringing.
Pin 3 (Gate)	Control input for channel conduction	High-impedance input requiring 2.0–4.0 V threshold; Q_gs = 63 nC defines Miller plateau duration during switching.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	1.2–1.6 mΩ enables <1.3 W conduction loss at full 160 A load, reducing thermal stress in compact power modules.
175°C operating junction temperature	Allows sustained operation in high-ambient environments (e.g., automotive engine bays or industrial enclosures) without derating.
Repetitive avalanche rated	Validated up to T_jmax per Figures 15–16; supports unclamped inductive switching in motor gate drivers and solenoid controls.
Fast body diode recovery	t_rr = 43–65 ns and Q_rr = 48–72 nC reduce shoot-through risk and improve efficiency in synchronous rectifiers.
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1; suitable for lead-free reflow assembly without preconditioning.

Applications

Motor Drive Inverter Stage

DC-DC Synchronous Buck Converter

Use Scenario: High-current H-bridge for 24 V BLDC motor control in industrial automation.

IC Role / Device Role / Timing Role: Low-side switching element handling peak currents >130 A with <100 ns switching transitions.

Use Value: 1.6 mΩ R_DS(on) minimizes I²R loss during PWM conduction, enabling >97% efficiency at 10 kW output.

Use Scenario: Primary-side high-current switch in 48 V-to-12 V automotive DC-DC converter.

IC Role / Device Role / Timing Role: Main power switch operating at 200–500 kHz with synchronous rectification.

Use Value: Low Q_gd/Q_g ratio (≈0.42) ensures clean Miller plateau transition, reducing gate drive complexity and EMI.

Uninterruptible Power Supply (UPS) Output Stage

Industrial Battery Management System (BMS) Protection

Use Scenario: Bidirectional power switch in online UPS inverters delivering 3 kVA continuous output.

IC Role / Device Role / Timing Role: High-current, high-reliability switching element subjected to frequent overload and short-circuit events.

Use Value: 630 mJ single-pulse avalanche rating and 1050 mJ tested E_AS provide margin against line transients and fault conditions.

Use Scenario: Main isolation switch in 48 V lithium-ion battery pack disconnect circuit.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical contactor, activated during overcurrent or thermal fault.

Use Value: 175°C T_jmax and 1360 A pulsed current rating ensure safe interruption of >1 kA fault currents without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 0.75 mΩ @ 10 V; smaller DFN5x6 package; lower Q_g (135 nC); no avalanche rating published.	Better suited for space-constrained, high-frequency (>1 MHz) applications where avalanche robustness is secondary.	Select when board area is constrained and thermal interface allows lower R_θJA; avoid in unclamped inductive loads.
IXFH160N40P3	R_DS(on) = 1.8 mΩ @ 10 V; TO-247 package; higher P_D (420 W); 100% avalanche tested to 500 mJ.	Preferred for forced-air-cooled industrial inverters requiring mechanical mounting and higher single-pulse ruggedness.	Select when mechanical mounting, serviceability, or higher single-pulse E_AS margin is required over surface-mount integration.

Compared with STL220N4F7AG and IXFH160N40P3, IRF2804S-7PPBF offers the best balance of ultra-low R_DS(on), proven repetitive avalanche capability, and D²PAK manufacturability-making it optimal for high-power, thermally demanding yet volume-sensitive applications like server VRMs and EV auxiliary converters.

Availability

IRF2804S-7PPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF2804S-7PPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor solutions, and automotive microcontrollers, with core expertise in silicon and wide-bandgap power devices.

This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-current, high-efficiency switching in industrial motor control, renewable energy inverters, and telecom power systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF2804S-7PPBF supports 230 A continuous drain current at T_C = 25°C but is limited to 136 A at T_C = 100°C due to package thermal constraints, as shown in Figure 9 of the datasheet. This derating reflects the 0.50°C/W junction-to-case thermal resistance and safe operating area boundaries.

Does this MOSFET have a specified repetitive avalanche energy rating?

Yes-repetitive avalanche energy (E_AR) is fully characterized in Figures 15 and 16. At T_j = 25°C and 1% duty cycle, E_AR reaches 800 mJ; at T_j = 125°C, it drops to 200 mJ. Operation remains safe as long as instantaneous junction temperature stays below 175°C.

Can IRF2804S-7PPBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (Figure 10) ensures inherent current sharing stability. Designers should match gate drive impedance and layout symmetry; typical practice uses <5 Ω gate resistors and Kelvin source connections to minimize imbalance.

Is the body diode suitable for synchronous rectification in buck converters?

Yes-the body diode exhibits t_rr = 43–65 ns and Q_rr = 48–72 nC at I_S = 160 A, enabling efficient synchronous operation up to ~300 kHz. However, external Schottky diodes may still be preferred above 500 kHz due to lower Q_rr and zero recovery loss.

IRF2804S-7PPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.6mOhm @ 160A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 260 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6930 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 330W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK (7-Lead)

IRF2804S-7PPBF FAQ

1.How can I place an order for IRF2804S-7PPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF2804S-7PPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF2804S-7PPBF reliable?

The price and inventory of IRF2804S-7PPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2804S-7PPBF is usually 5 days.

3.What payment methods are accepted for IRF2804S-7PPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2804S-7PPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF2804S-7PPBF?

IRF2804S-7PPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF2804S-7PPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF2804S-7PPBF?

For technical support, including IRF2804S-7PPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2804S-7PPBF requirements.

6.How does Aetrix verify that IRF2804S-7PPBF is sourced from the original manufacturer or authorized distributors?

All IRF2804S-7PPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2804S-7PPBF meets industry standards.

7.What is the process for return or replacement of IRF2804S-7PPBF?

All IRF2804S-7PPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF2804S-7PPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF2804S-7PPBF part is unused and in its original packaging.

Return procedure for IRF2804S-7PPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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