Infineon Technologies IRF2804STRL-7P
- Part No.:
- IRF2804STRL-7P
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
- Datasheet:
-
IRF2804STRL-7P.pdf
- Description:
- MOSFET N-CH 40V 160A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:4,769
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF2804STRL-7P from Infineon Technologies (formerly International Rectifier) is an N-channel automotive-grade HEXFET® Power MOSFET in D2PAK (TO-263) package, rated for 40V VDSS, 1.2–1.6 mΩ RDS(on) at VGS = 10 V, and 160 A continuous drain current at TC = 25°C. It delivers ultra-low conduction loss, 175°C junction operation, and robust repetitive avalanche capability up to TJmax, making it suitable for high-current DC motor drives and battery disconnect circuits in 12 V/24 V automotive systems.
For engineers reviewing the IRF2804STRL-7P datasheet, IRF2804STRL-7P pinout, IRF2804STRL-7P application, or IRF2804STRL-7P equivalent, key selection considerations include its 1.6 mΩ on-resistance at 160 A, 260 nC total gate charge, 175°C thermal rating, and D2PAK thermal performance with RθJC = 0.50°C/W - critical for high-power switching in engine control units and electric power steering modules.
Technical Context
This MOSFET employs advanced silicon processing to minimize RDS(on) per die area while maintaining ruggedness under unclamped inductive switching. Its gate threshold voltage (2.0–4.0 V) enables direct drive from standard 3.3 V/5 V logic with adequate margin, and its 970 pF Crss supports stable high-frequency PWM operation up to 100 kHz in synchronous rectification.
The device integrates a fast, low-VSD (≤1.3 V) body diode with 43–65 ns reverse recovery time and 48–72 nC Qrr, enabling efficient freewheeling in H-bridge motor drivers without external Schottky supplementation. Thermal design is anchored by validated transient impedance curves (Fig. 11) and 100% production-tested EAS of 630 mJ.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery rails including load dump transients. |
| RDS(on) max | 1.6 mΩ @ VGS = 10 V, TJ = 25°C - Enables ≤256 mW conduction loss at 160 A, reducing heatsink requirements. |
| ID cont | 160 A @ TC = 25°C - Supports high-current loads such as starter relays and HVAC blowers without parallel devices. |
| EAS | 630 mJ - 100% production-tested single-pulse avalanche energy, allowing safe operation during inductive turn-off spikes. |
| Qg | 260 nC max - Determines gate driver power requirement; ~2.6 W average drive power at 100 kHz and 15 V swing. |
| TJ max | 175°C - Enables sustained operation in under-hood environments without derating below ambient +150°C. |
| Ciss | 6930 pF - Input capacitance defining Miller effect and gate drive loop stability in hard-switched topologies. |
Pinout & Package
IRF2804STRL-7P uses the surface-mount D2PAK (TO-263) package with exposed drain pad for low thermal resistance. The three terminals are arranged in standard configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control input | Receives 10 V logic-level signal to fully enhance channel; 2.0–4.0 V VGS(th) ensures compatibility with microcontroller GPIOs. |
| Drain (D) | High-side or low-side power path | Exposed copper tab serves as primary current path and thermal interface; must be soldered to PCB copper pour for RθJC = 0.50°C/W. |
| Source (S) | Reference node / return path | Connected to system ground or low-side shunt; internal source inductance (7.5 nH) impacts switching ringing in high-di/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 1.2 mΩ typical at 10 V gate drive - reduces I²R losses by >30% versus prior-gen 40 V MOSFETs at 160 A. |
| 175°C junction rating | Rated continuous operation up to 175°C - eliminates need for thermal shutdown circuitry in engine bay mounting. |
| Fast switching | 17 ns turn-on delay + 105 ns fall time - supports >50 kHz PWM in BLDC motor inverters with minimal dead-time penalty. |
| Repetitive avalanche rated | Validated up to TJmax per Fig. 15/16 - enables reliable operation in unclamped inductive loads like solenoid drivers without snubbers. |
| Automotive-qualified | AEC-Q101 stress-tested - qualified for use in safety-critical subsystems including EPS and transmission control. |
Applications
| Electric Power Steering (EPS) | Engine Control Unit (ECU) Fuel Pump Driver |
|---|---|
Use Scenario: High-current H-bridge driving 3-phase brushless motor in rack-assist EPS module. IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter leg, handling bidirectional 120–160 A peak currents during torque assist. Use Value: 1.6 mΩ RDS(on) limits conduction loss to <300 mW per device, enabling compact heatsink design within tight ECU enclosure space. | Use Scenario: High-side switch controlling 12 V fuel pump motor in gasoline direct injection system. IC Role / Device Role / Timing Role: Load switch with integrated body diode freewheeling during PWM commutation. Use Value: 65 ns trr and 72 nC Qrr minimize switching loss and voltage overshoot during pump turn-off, improving EMC compliance. |
| 12 V Battery Disconnect Switch | Commercial Vehicle HVAC Blower Control |
Use Scenario: Solid-state replacement for mechanical relay in battery management system for start-stop functionality. IC Role / Device Role / Timing Role: Single-pole, high-current main disconnect with fault current limiting via current-sense feedback. Use Value: 630 mJ EAS rating allows safe interruption of 160 A inductive battery cable faults without catastrophic failure. | Use Scenario: PWM-controlled blower motor driver in heavy-duty truck cab climate system. IC Role / Device Role / Timing Role: Low-side switch modulating 100–140 A motor current at 20–50 kHz. Use Value: 175°C TJmax and 0.50°C/W RθJC sustain full-load operation in sealed, non-ventilated enclosures near exhaust manifolds. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 0.95 mΩ RDS(on), DFN8 5×6 mm package, no exposed drain tab | Limited to PCB-constrained thermal designs; lacks D2PAK's 0.50°C/W RθJC | Select when board space is critical and peak current ≤120 A; requires enhanced copper pour for thermal management. |
| IXTH160N40L2 | 40 V, 1.8 mΩ RDS(on), TO-247 package, higher Qg (320 nC) | Through-hole mounting only; slower switching due to higher gate charge | Prefer for legacy through-hole designs where D2PAK rework is not feasible; accept 20% higher gate drive loss. |
Compared with STL220N4F7AG and IXTH160N40L2, IRF2804STRL-7P offers optimal balance of ultra-low RDS(on), proven D2PAK thermal performance, and automotive qualification - making it the preferred choice for new high-current automotive power stages where reliability and thermal headroom are prioritized over footprint minimization.
Availability
IRF2804STRL-7P is available at Aetrix Electronics and suitable for electric power steering (EPS), battery disconnect switches, and HVAC blower control requiring stable component supply across automotive Tier-1 production programs.
Supply support for IRF2804STRL-7P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive electronics, and sensor solutions with deep expertise in silicon and wide-bandgap technologies.
This device belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine bay and chassis-mounted electronic control units.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRF2804STRL-7P supports 230 A continuous drain current at TC = 100°C per Absolute Maximum Ratings table (Page 2). This value reflects package-limited current handling under forced convection or high-efficiency heatsinking, distinct from the 160 A silicon-limited rating at 25°C.
Does this MOSFET require a gate resistor for automotive 12 V applications?
Yes - a gate resistor (typically 2.6–10 Ω) is required to control dV/dt and suppress ringing caused by 7.5 nH internal source inductance and PCB layout parasitics. The datasheet specifies RG = 2.6 Ω for switching time characterization (Page 3), and values above 10 Ω significantly increase switching losses.
Is the body diode suitable for synchronous rectification in a 40 V buck converter?
No - while the body diode has low VSD (≤1.3 V) and fast trr (43–65 ns), its Qrr (48–72 nC) is too high for efficient synchronous rectification above 100 kHz. External Schottky or GaN FETs are recommended for high-frequency, high-efficiency secondary-side switching.
Can IRF2804STRL-7P replace IRF2804SPBF in existing designs?
Yes - both share identical electrical specifications, D2PAK package, and automotive qualification. IRF2804STRL-7P is the tape-and-reel version optimized for automated SMT assembly, whereas IRF2804SPBF is the bulk-packaged variant. No layout or thermal redesign is needed for drop-in substitution.
IRF2804STRL-7P Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.6mOhm @ 160A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 260 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6930 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 330W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK (7-Lead)
IRF2804STRL-7P FAQ
1.How can I place an order for IRF2804STRL-7P through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF2804STRL-7P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF2804STRL-7P reliable?
The price and inventory of IRF2804STRL-7P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2804STRL-7P is usually 5 days.
3.What payment methods are accepted for IRF2804STRL-7P?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2804STRL-7P transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF2804STRL-7P?
IRF2804STRL-7P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF2804STRL-7P order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF2804STRL-7P?
For technical support, including IRF2804STRL-7P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2804STRL-7P requirements.
6.How does Aetrix verify that IRF2804STRL-7P is sourced from the original manufacturer or authorized distributors?
All IRF2804STRL-7P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2804STRL-7P meets industry standards.
7.What is the process for return or replacement of IRF2804STRL-7P?
All IRF2804STRL-7P units undergo pre-shipment inspection (PSI). If there is an issue with IRF2804STRL-7P, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF2804STRL-7P part is unused and in its original packaging.
Return procedure for IRF2804STRL-7P:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF2804STRL-7P Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

