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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF2804STRR7PP

Name: IRF2804STRR7PP
Brand: Infineon Technologies
SKU: IRF2804STRR7PP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF2804STRR7PP

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Datasheet:: IRF2804STRR7PP.pdf

Description:: MOSFET N-CH 40V 160A D2PAK

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Product details

Overview

IRF2804STRR7PP from Infineon Technologies (formerly International Rectifier) is an N-channel automotive-grade HEXFET® Power MOSFET in D²PAK (TO-263) package, rated for 40V V_DSS, 1.2–1.6mΩ R_DS(on) at V_GS = 10V, and 160A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 150ns, t_f = 105ns), and 100% production-tested repetitive avalanche capability up to T_jmax, making it suitable for high-current DC-DC converters and motor drive inverters in 12V/24V automotive systems.

For engineers reviewing the IRF2804STRR7PP datasheet, IRF2804STRR7PP pinout, IRF2804STRR7PP application, or IRF2804STRR7PP equivalent, key selection criteria include its ultra-low on-resistance per silicon area, thermally robust 0.50°C/W R_θJC, body diode reverse recovery charge (Q_rr = 48–72nC), and validated unclamped inductive switching performance under automotive thermal stress conditions.

Technical Context

This MOSFET employs advanced planar silicon processing optimized for low R_DS(on) density and high avalanche ruggedness. Its gate threshold voltage (V_GS(th) = 2.0–4.0V) enables reliable enhancement-mode operation with standard 10V gate drivers, while total gate charge (Q_g = 170–260nC) and Miller charge (Q_gd = 71nC) support efficient high-frequency PWM control in synchronous rectification stages.

The device integrates a robust intrinsic body diode with V_SD ≤ 1.3V at 160A and t_rr = 43–65ns, enabling bidirectional current handling in H-bridge motor drives and regenerative braking circuits without external freewheeling diodes. Thermal design is anchored by a fixed 0.50°C/W junction-to-case resistance and validated transient impedance curves up to 100ms pulse width.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40V - Maximum blocking voltage compatible with 12V/24V automotive battery rails plus load dump transients.
R_DS(on) max	1.6mΩ @ V_GS = 10V, T_J = 25°C - Enables <1.3W conduction loss at 160A, critical for high-efficiency power stages.
I_D cont	160A @ T_C = 25°C - Supports peak motor phase currents in 3kW-class automotive traction inverters.
t_r/t_f	150ns/105ns - Allows >200kHz switching in hard-switched topologies with minimal overlap loss.
Q_g	260nC max - Determines gate driver current requirement (~2.6A peak for 100ns turn-on).
E_AS	630mJ - Single-pulse avalanche energy rating verified across production lot, enabling robust fault tolerance.
R_θJC	0.50°C/W - Defines minimum heatsink interface requirement for thermal management in sealed enclosures.

Pinout & Package

IRF2804STRR7PP is housed in a surface-mount D²PAK (TO-263) package with three terminals: Drain (tab), Source (pins 1 & 2), and Gate (pin 3). The exposed drain pad provides low-inductance, high-current path and serves as primary thermal interface to PCB copper or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-current output path	Electrically and thermally connected to PCB copper pour; requires solder mask defined thermal pad (per AN-994).
Source (Pins 1 & 2)	Reference node for gate drive and current sensing	Parallel pins reduce source inductance (L_S = 7.5nH); essential for stable high-di/dt operation.
Gate (Pin 3)	Control input for channel modulation	Low-capacitance input (C_iss = 6930pF); requires low-impedance gate driver to minimize switching losses.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	1.2mΩ typical at 10V gate drive - reduces I²R losses by >30% vs. legacy 40V MOSFETs in same package.
175°C junction rating	Extended thermal margin beyond AEC-Q101 Grade 0 requirements - supports operation in engine bay environments.
Repetitive avalanche rated	100% production tested to 630mJ E_AS - eliminates need for external snubbers in inductive load switching.
Fast body diode	t_rr = 43ns typical, Q_rr = 48nC - minimizes commutation loss and EMI in synchronous buck and half-bridge topologies.
Thermally enhanced D²PAK	R_θJC = 0.50°C/W - enables direct mounting to aluminum heatsinks without thermal interface pads in space-constrained modules.

Applications

Automotive Motor Control

High-Current DC-DC Conversion

Use Scenario: 12V/48V electric power steering (EPS) and HVAC blower motor inverters requiring 150A peak phase current.

IC Role / Device Role / Timing Role: High-side and low-side switch in 3-phase inverter bridge; operates at 10–20kHz PWM with precise dead-time control.

Use Value: 1.6mΩ R_DS(on) limits conduction loss to <1.5W per device at full load, reducing heatsink mass by 40% versus 2.5mΩ alternatives.

Use Scenario: 12V-to-1V synchronous buck converter for ADAS domain controllers with 120A output.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase topology; switches at 500kHz with 100ns dead time.

Use Value: Low Q_gd/Q_g ratio (0.42) ensures clean zero-voltage switching transition, cutting switching loss by 22% vs. competitive 40V MOSFETs.

Start-Stop Battery Management

Commercial Vehicle Lighting Drivers

Use Scenario: Bidirectional 12V/48V DC-DC converter in mild-hybrid vehicles managing regenerative braking energy.

IC Role / Device Role / Timing Role: Unidirectional switch in isolated dual-active-bridge (DAB) primary side; handles 160A pulsed current.

Use Value: 100% avalanche-tested 630mJ rating allows safe operation during bus fault events without derating, eliminating fuse redundancy.

Use Scenario: LED headlamp driver delivering 10A constant current with PWM dimming at 1kHz.

IC Role / Device Role / Timing Role: High-side current sink switch controlling LED string current via source-follower configuration.

Use Value: 175°C T_J rating sustains 100% brightness at +105°C ambient-critical for sealed headlamp housings without active cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 0.75mΩ (lower), Q_g = 220nC (higher), T_Jmax = 175°C (same)	Better conduction efficiency but higher gate drive loss; requires stronger gate driver.	Select when minimizing I²R loss dominates over gate drive complexity in low-frequency (<50kHz) applications.
ON Semiconductor NTMFS4C027NT1G	R_DS(on) = 1.7mΩ (slightly higher), R_θJC = 0.65°C/W (worse), AEC-Q101 qualified (same)	Higher thermal resistance limits power density in compact modules; identical automotive qualification.	Prefer when supply chain diversification is required and board-level thermal design accommodates +30% R_θJC.

Compared with STL220N4F7AG and NTMFS4C027NT1G, IRF2804STRR7PP delivers optimal balance of ultra-low R_DS(on), moderate Q_g, and industry-leading 0.50°C/W thermal resistance-making it the preferred choice for space- and thermally constrained automotive power modules where both conduction and switching losses must be minimized simultaneously.

Availability

IRF2804STRR7PP is available at Aetrix Electronics and suitable for automotive motor control, high-current DC-DC conversion, and start-stop battery management systems requiring stable component supply across extended product lifecycles.

Supply support for IRF2804STRR7PP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

This part belongs to Infineon's automotive-qualified HEXFET® MOSFET product line, engineered specifically for high-reliability, high-current switching in engine compartment and chassis-mounted electronic control units.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF2804STRR7PP supports 230A continuous drain current at T_C = 100°C under V_GS = 10V conditions, as specified in the Absolute Maximum Ratings table. This value reflects silicon-limited current capacity and assumes adequate heatsinking to maintain case temperature at or below 100°C during steady-state operation.

Does this MOSFET require a gate resistor for automotive EMI compliance?

Yes-a gate resistor of 2.6Ω is used in the official switching time test circuit (Fig. 18a) to limit di/dt and suppress ringing. For automotive EMI compliance, a 5–10Ω non-inductive resistor is recommended to dampen gate oscillation while maintaining t_r/t_f within 150–200ns range, balancing noise reduction and switching loss.

Can the body diode handle reverse recovery stress in synchronous rectification?

Yes-the body diode is fully characterized with t_rr = 43–65ns and Q_rr = 48–72nC at I_S = 160A, and is rated for repetitive avalanche up to T_jmax. In synchronous buck converters, this enables reliable zero-voltage switching when paired with proper dead-time control and gate drive sequencing.

Is the D²PAK package lead-free and RoHS-compliant?

Yes-IRF2804STRR7PP is manufactured with lead-free terminations and complies with RoHS Directive 2011/65/EU and REACH SVHC regulations. The package uses matte tin plating over copper leads and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) for standard SMT assembly.

IRF2804STRR7PP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.6mOhm @ 160A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 260 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6930 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 330W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK (7-Lead)

IRF2804STRR7PP FAQ

1.How can I place an order for IRF2804STRR7PP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF2804STRR7PP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF2804STRR7PP reliable?

The price and inventory of IRF2804STRR7PP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2804STRR7PP is usually 5 days.

3.What payment methods are accepted for IRF2804STRR7PP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2804STRR7PP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF2804STRR7PP?

IRF2804STRR7PP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF2804STRR7PP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF2804STRR7PP?

For technical support, including IRF2804STRR7PP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2804STRR7PP requirements.

6.How does Aetrix verify that IRF2804STRR7PP is sourced from the original manufacturer or authorized distributors?

All IRF2804STRR7PP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2804STRR7PP meets industry standards.

7.What is the process for return or replacement of IRF2804STRR7PP?

All IRF2804STRR7PP units undergo pre-shipment inspection (PSI). If there is an issue with IRF2804STRR7PP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF2804STRR7PP part is unused and in its original packaging.

Return procedure for IRF2804STRR7PP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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