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Infineon Technologies IRF2804STRRPBF
- Part No.:
- IRF2804STRRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF2804STRRPBF.pdf
- Description:
- MOSFET N-CH 40V 75A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,271
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Product details
Overview
IRF2804STRRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-220 package, rated for 75 V VDS, 162 A continuous drain current at TC = 25°C, and 4.5 mΩ typical RDS(on) at VGS = 10 V. It serves as a high-current switching element in DC-DC converters, motor drives, and battery protection circuits.
For engineers reviewing the IRF2804STRRPBF datasheet, IRF2804STRRPBF pinout, IRF2804STRRPBF application, or IRF2804STRRPBF equivalent, key selection criteria include its low on-resistance at standard gate drive, rugged avalanche rating, and thermal performance in high-power linear and switching topologies.
Technical Context
This Generation 3 HEXFET device uses planar vertical DMOS structure with optimized cell pitch and gate oxide thickness to achieve high current density and stable threshold voltage. Its body diode exhibits soft recovery characteristics with 220 ns reverse recovery time and 120 A peak reverse recovery current.
The MOSFET supports gate drive voltages from 10 V to 20 V, features 100% UIS-tested avalanche capability (EAS = 520 mJ), and maintains safe operating area (SOA) compliance up to 10 ms pulse width at 75 V with 162 A peak current.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - Maximum drain-source blocking voltage before breakdown; defines maximum bus voltage in buck/boost stages. |
| RDS(on) @ VGS=10 V | 4.5 mΩ typ - Enables <1 W conduction loss at 150 A, critical for high-efficiency 12–48 V systems. |
| ID (continuous) | 162 A @ TC=25°C - Sustains full-load current in heatsink-mounted industrial inverters without derating. |
| Qg | 190 nC - Determines gate driver power requirement and switching speed in hard-switched SMPS designs. |
| EAS | 520 mJ - Confirms single-pulse avalanche robustness during inductive turn-off transients in motor control. |
| trr | 220 ns - Limits commutation losses and EMI generation when used with synchronous rectification or freewheeling paths. |
Pinout & Package
Package: TO-220AB (3-pin, straight lead, through-hole). Standard outline per JEDEC TO-220AC. Mounting tab is electrically connected to drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current-carrying terminal, tied to heatsink | Provides low-inductance thermal and electrical path to chassis ground or high-side rail; requires isolation washer if heatsink is grounded. |
| Gate | Control electrode | Receives 10–20 V logic-level signal; sensitive to ESD-requires series gate resistor (≥10 Ω) and TVS clamp for reliability. |
| Source | Reference node for gate drive and current sensing | Serves as return path for load current and feedback reference for current-mode controllers; must be low-impedance layout. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS-tested avalanche energy | Guarantees operation under unclamped inductive switching stress without parameter shift or failure. |
| Low gate charge (Qg = 190 nC) | Reduces driver power dissipation and enables faster switching transitions in 100–500 kHz converters. |
| Rugged body diode with soft recovery | Minimizes voltage overshoot and ringing during freewheeling, easing EMI filter design in motor drives. |
| Enhancement-mode operation | Ensures default-OFF behavior-no external bias needed for safe startup in power supply sequencing. |
Applications
| DC-DC Converter Primary Switch | Brushed DC Motor H-Bridge |
|---|---|
Use Scenario: High-current step-down converter in telecom power shelf delivering 50 A @ 12 V from 48 V input. IC Role / Device Role / Timing Role: Main high-side switching transistor synchronized to PWM controller; conducts during on-time, blocks during off-time. Use Value: 4.5 mΩ RDS(on) limits conduction loss to ≤0.36 W at 150 A, enabling >95% efficiency at full load. | Use Scenario: Bidirectional 24 V, 80 A motor drive for automated guided vehicle (AGV) traction control. IC Role / Device Role / Timing Role: Low-side switch in H-bridge leg; handles continuous current and reverse EMF during braking. Use Value: 520 mJ avalanche rating absorbs inductive kickback without snubber, reducing component count and board space. |
| Battery Protection Circuit | Industrial UPS Inverter Stage |
Use Scenario: Overcurrent cutoff in 48 V lithium-ion battery pack with 120 A max discharge. IC Role / Device Role / Timing Role: Solid-state disconnect switch placed between battery terminals; activated only during fault conditions. Use Value: 162 A ID rating allows headroom for surge currents while maintaining <50 mV sense voltage across RDS(on). | Use Scenario: Half-bridge output stage in 3 kVA online UPS converting 400 V DC bus to 230 V AC line. IC Role / Device Role / Timing Role: High-current switching device in hard-switched inverter leg; operated at 16 kHz with zero-voltage switching assist. Use Value: SOA compliance up to 10 ms ensures reliable operation during short-circuit events without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP160N75F7 | 75 V VDS, 160 A ID, 3.8 mΩ RDS(on); trench-gate process, lower Qg (145 nC) | Better switching efficiency at >200 kHz; slightly reduced avalanche rating (EAS = 420 mJ) | Preferred for high-frequency SMPS where gate drive loss dominates; less suitable for high-energy inductive loads. |
| IXTH160N075L2 | 75 V VDS, 160 A ID, 4.0 mΩ RDS(on); linear SOA, enhanced dV/dt immunity | Superior ruggedness in noisy industrial environments; higher cost and larger footprint (TO-247) | Recommended for mission-critical motor drives requiring guaranteed SOA margin and noise immunity. |
Compared with STP160N75F7 and IXTH160N075L2, the IRF2804STRRPBF offers balanced conduction-switching trade-offs in TO-220, making it optimal for cost-sensitive, medium-frequency (<100 kHz), high-current applications where proven avalanche robustness is required.
Availability
IRF2804STRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and battery protection circuits requiring stable component supply and long-term industrial availability.
Supply support for IRF2804STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture, qualify, and support the HEXFET product family under its Power Management & Multichip Solutions division.
The IRF2804STRRPBF belongs to the Generation 3 HEXFET Power MOSFET series, designed specifically for high-current, medium-voltage switching in industrial power conversion and motor control systems.
FAQ
What is the maximum junction temperature for IRF2804STRRPBF?
The absolute maximum junction temperature is 175°C. Operation above this limit risks permanent parametric shift or catastrophic failure. Thermal design must ensure TJ remains ≤150°C under worst-case ambient and power dissipation conditions, using appropriate heatsinking and airflow per the datasheet SOA curves.
Is IRF2804STRRPBF suitable for logic-level gate drive?
No. IRF2804STRRPBF is a standard-threshold MOSFET requiring ≥10 V gate drive for full enhancement. Its RDS(on) rises sharply below 8 V VGS; it is not compatible with 3.3 V or 5 V microcontroller outputs without level-shifting or gate boosting circuitry.
Does IRF2804STRRPBF have built-in ESD protection?
No. The device lacks integrated gate protection diodes. Gate oxide is highly susceptible to ESD damage-handling requires Class 0 ESD controls, and PCB layout must include external gate-to-source Zener clamping (e.g., 15 V TVS) and series resistance to limit transient current.
Can IRF2804STRRPBF be paralleled with identical units?
Yes, but only with matched devices and careful layout. Parallel operation requires individual source resistors (≈0.01 Ω) for current sharing, symmetrical gate drive paths, and thermal coupling to minimize mismatch due to VGS(th) drift and RDS(on) temperature coefficient differences.
IRF2804STRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 240 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6450 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF2804STRRPBF FAQ
1.How can I place an order for IRF2804STRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF2804STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF2804STRRPBF reliable?
The price and inventory of IRF2804STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2804STRRPBF is usually 5 days.
3.What payment methods are accepted for IRF2804STRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2804STRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF2804STRRPBF?
IRF2804STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF2804STRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF2804STRRPBF?
For technical support, including IRF2804STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2804STRRPBF requirements.
6.How does Aetrix verify that IRF2804STRRPBF is sourced from the original manufacturer or authorized distributors?
All IRF2804STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2804STRRPBF meets industry standards.
7.What is the process for return or replacement of IRF2804STRRPBF?
All IRF2804STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF2804STRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF2804STRRPBF part is unused and in its original packaging.
Return procedure for IRF2804STRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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