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Infineon Technologies IRF2805STRLPBF
- Part No.:
- IRF2805STRLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF2805STRLPBF.pdf
- Description:
- MOSFET N-CH 55V 135A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,784
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Product details
Overview
IRF2805STRLPBF from Infineon Technologies (formerly International Rectifier) is a 55V, 4.7mΩ N-channel HEXFET® Power MOSFET in D2PAK (TO-263) package, rated for 135A continuous drain current at 25°C and 96A at 100°C, with 700A pulsed capability and 175°C maximum junction temperature - designed for high-current DC-DC converters and motor drive half-bridges.
For engineers reviewing the IRF2805STRLPBF datasheet, IRF2805STRLPBF pinout, IRF2805STRLPBF application, or IRF2805STRLPBF equivalent, key selection criteria include RDS(on) stability over temperature, unclamped inductive avalanche robustness (380 mJ single-pulse, 1220 mJ 6-sigma tested), fast switching (tr = 120 ns, tf = 110 ns), and thermal resistance (RθJC = 0.75°C/W).
Technical Context
This device implements a planar silicon-gate process optimized for low conduction loss and high repetitive avalanche tolerance. Its gate threshold voltage (2.0–4.0 V) enables direct TTL/CMOS drive, while the 150–230 nC total gate charge supports efficient hard-switching up to ~100 kHz in synchronous buck topologies.
The integrated body diode exhibits 1.3 V forward drop at 104 A and 80–120 ns reverse recovery time, enabling use in freewheeling paths without external Schottky supplementation in medium-frequency industrial inverters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum blocking voltage in off-state; defines safe operation in 48V bus systems with transient margin. |
| RDS(on) | 4.7 mΩ max @ VGS = 10 V, ID = 104 A - Enables <1.2 W conduction loss at 100 A, critical for thermally constrained PCB layouts. |
| ID (25°C) | 135 A - Continuous current rating at case temperature ≤25°C; limited by package thermal capacity, not silicon. |
| EAS | 380 mJ (single-pulse), 1220 mJ (6-sigma tested) - Supports reliable operation under unclamped inductive turn-off in motor control fault conditions. |
| tr/tf | 120 ns / 110 ns @ ID = 104 A, RG = 2.5 Ω - Enables high-efficiency switching in 50–100 kHz power stages with minimal overlap loss. |
| TJ max | 175°C - Allows sustained operation in sealed enclosures or high-ambient industrial environments without derating penalties. |
| Ciss | 5110 pF @ VDS = 0 V - Determines gate drive power requirement and influences EMI profile in hard-switched converters. |
Pinout & Package
IRF2805STRLPBF uses the surface-mount D2PAK (TO-263) package with exposed drain pad for thermal enhancement. The three terminals are arranged in standard S-D-G order (Source-Drain-Gate) on the bottom side of the molded body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab / Pin 2 (Drain) | Main current return path to high-side switch node | Electrically connected to die backside; must be soldered to large copper pour for thermal management and low-inductance routing. |
| Pin 1 (Source) | Reference node for gate drive and current sensing | Low-impedance source connection; used for Kelvin sense in precision current monitoring configurations. |
| Pin 3 (Gate) | Control terminal for channel modulation | High-impedance input requiring <230 nC charge; sensitive to ringing - requires local RC snubber or gate resistor placement within 5 mm. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 3.9 mΩ typical at 10 V gate drive - reduces conduction losses by >25% vs. legacy 55V MOSFETs in 48V telecom rectifiers. |
| 175°C junction rating | Enables full-rated current delivery at ambient temperatures up to 105°C with proper heatsinking - eliminates need for thermal throttling in fanless designs. |
| Repetitive avalanche capability | Rated per JEDEC JESD24-11; validated to 100% production test at 1220 mJ - ensures reliability in motor phase-leg shoot-through protection. |
| Fast body diode | trr = 80–120 ns, Qrr = 290–430 nC - minimizes reverse recovery loss and EMI in synchronous rectification and LLC resonant converters. |
Applications
| Industrial Motor Drive | 48V DC-DC Converter |
|---|---|
Use Scenario: Three-phase inverter stage for 5–10 kW servo drives operating in harsh factory environments with frequent overload transients. IC Role / Device Role / Timing Role: High-side and low-side switching element in IGBT-replacement half-bridge modules, handling 100 A peak phase current at 8–20 kHz PWM. Use Value: 175°C rating avoids thermal shutdown during 150% torque bursts; 1220 mJ avalanche energy withstands bus voltage spikes during rapid deceleration. |
Use Scenario: Primary-side synchronous rectifier in isolated 48V-to-12V step-down converter for data center power shelves. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology, operating at 100 kHz with 104 A average output current. Use Value: 4.7 mΩ RDS(on) limits conduction loss to <0.5 W at full load; fast switching reduces dead-time losses and improves light-load efficiency. |
| Uninterruptible Power Supply (UPS) | Automotive 48V Mild Hybrid System |
Use Scenario: Bidirectional DC-AC inverter stage in online UPS units requiring zero-transfer-time switchover and battery backup support. IC Role / Device Role / Timing Role: Output bridge switch handling 135 A continuous current during battery discharge mode, with fast body diode conducting freewheeling current. Use Value: 1.3 V VSD at 104 A reduces diode conduction loss by 40% vs. discrete Schottky solutions; 175°C rating sustains operation during extended brownout events. |
Use Scenario: Belt-driven starter-generator (BSG) in-circuit power switch for 48V mild hybrid architectures with regenerative braking. IC Role / Device Role / Timing Role: Main isolation switch between 48V battery and BSG motor controller, rated for 100,000+ cold-crank cycles. Use Value: 700 A pulsed drain current handles 200 ms cranking surges; lead-free (PbF) finish complies with automotive RoHS and ELV directives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N5LF8AG | RDS(on) = 3.2 mΩ (lower), but VDSS = 40 V only; 150°C TJ max; DFN8 5x6 package. | Not suitable for 48V bus transients exceeding 40 V; better for compact 24–36V systems with space constraints. | Select when board area is critical and bus voltage is strictly ≤40 V; avoid in 48V industrial or automotive applications. |
| IXFH50N50P3 | VDSS = 500 V, RDS(on) = 100 mΩ; TO-247 package; 175°C rating; higher gate charge (220 nC). | Designed for high-voltage AC-DC PFC and offline SMPS - not a drop-in replacement due to voltage/current mismatch. | Choose only for 400–500V applications where 55V devices cannot withstand line surges; not interchangeable in 48V motor drives. |
Compared with STL220N5LF8AG and IXFH50N50P3, IRF2805STRLPBF uniquely balances 55V blocking, sub-5-mΩ on-resistance, and 175°C operation in a thermally optimized D2PAK - making it optimal for high-current 48V industrial and automotive power stages where both voltage margin and thermal headroom are non-negotiable.
Availability
IRF2805STRLPBF is available at Aetrix Electronics and suitable for industrial motor drives, 48V DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term manufacturing continuity.
Supply support for IRF2805STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.
IRF2805STRLPBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial and automotive power conversion systems demanding ruggedness and thermal resilience.
FAQ
What is the maximum allowable gate-to-source voltage for IRF2805STRLPBF?
The absolute maximum VGS is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during fast switching transitions, especially with high dv/dt noise coupling.
Can IRF2805STRLPBF be paralleled for higher current handling?
Yes - its positive RDS(on) temperature coefficient (see Fig 4) enables natural current sharing. For stable parallel operation, match gate resistors (≤2.5 Ω), minimize layout asymmetry, and ensure identical thermal mounting across all devices to maintain <5°C junction temperature delta at full load.
Is IRF2805STRLPBF suitable for linear-mode (saturation) operation?
No - it is optimized for switching, not linear regulation. Operation in the ohmic region beyond Safe Operating Area (SOA) limits (Fig 8) causes localized thermal runaway. For linear applications, use purpose-designed lateral MOSFETs or bipolar transistors with SOA-rated derating curves.
Does IRF2805STRLPBF require a gate driver IC, or can it be driven directly from a microcontroller?
A dedicated gate driver IC is required. With 230 nC total gate charge and 150–230 Ω effective gate resistance, direct MCU GPIO (typically 20 mA max) cannot achieve <100 ns rise/fall times. Use drivers like IRS2007 or TC4427 with ≥2 A peak sink/source capability and matched propagation delays.
IRF2805STRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 135A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.7mOhm @ 104A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 230 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5110 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF2805STRLPBF FAQ
1.How can I place an order for IRF2805STRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF2805STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF2805STRLPBF reliable?
The price and inventory of IRF2805STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2805STRLPBF is usually 5 days.
3.What payment methods are accepted for IRF2805STRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2805STRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF2805STRLPBF?
IRF2805STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF2805STRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF2805STRLPBF?
For technical support, including IRF2805STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2805STRLPBF requirements.
6.How does Aetrix verify that IRF2805STRLPBF is sourced from the original manufacturer or authorized distributors?
All IRF2805STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2805STRLPBF meets industry standards.
7.What is the process for return or replacement of IRF2805STRLPBF?
All IRF2805STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF2805STRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF2805STRLPBF part is unused and in its original packaging.
Return procedure for IRF2805STRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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