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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF2807L

Name: IRF2807L
Brand: Infineon Technologies
SKU: IRF2807L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF2807L

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF2807L.pdf

Description:: MOSFET N-CH 75V 82A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF2807L from International Rectifier is a through-hole N-channel HEXFET® Power MOSFET rated for 75V V_DS, 13 mΩ R_DS(on) at V_GS = 10 V and 43 A, with 82 A continuous drain current at T_C = 25°C. It features full avalanche rating, 175°C operating junction temperature, and fast switching (t_d(off) = 49 ns, Q_g = 160 nC), designed for high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF2807L datasheet, IRF2807L pinout, IRF2807L application, or IRF2807L equivalent, key selection criteria include its TO-262 package thermal resistance (R_θJC = 0.75°C/W), body diode recovery performance (t_rr = 100–150 ns), and ruggedized avalanche energy rating (E_AS = 1280 mJ).

Technical Context

This device employs advanced HEXFET processing to minimize on-resistance per die area while maintaining robust SOA and avalanche capability. Its gate charge profile (Q_gs = 29 nC, Q_gd = 55 nC) supports efficient hard-switching in synchronous buck topologies up to 200 kHz.

The integrated body diode exhibits low forward voltage (V_SD ≤ 1.2 V at I_S = 43 A, T_J = 25°C) and controlled reverse recovery (Q_rr = 410–610 nC), enabling reliable operation in freewheeling and regenerative braking paths without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage in high-side switch or flyback primary applications
R_DS(on)	13 mΩ @ V_GS = 10 V, I_D = 43 A - Enables <1 W conduction loss at 80 A in parallel configurations
I_D (continuous)	82 A @ T_C = 25°C - Supports high-current motor phase legs with minimal heatsinking
E_AS	1280 mJ - Withstands single-pulse inductive turn-off stress without failure in solenoid drivers
t_rr	100–150 ns - Limits switching loss and EMI during body-diode commutation in LLC resonant converters
Q_g	160 nC - Determines gate driver power requirement (~1.6 mW average at 100 kHz, V_GS swing = 10 V)
R_θJC	0.75 °C/W - Allows 230 W dissipation with ≤175°C junction rise above 25°C case temperature

Pinout & Package

IRF2807L uses the TO-262 (I²PAK) through-hole package: 3-pin, single-row, isolated tab, lead-free finish. Mounting torque: 10 lbf·in (1.1 N·m). Tab is electrically connected to the Drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically tied to metal tab; requires insulated mounting hardware when referenced to non-ground potentials
Source	Return path for load current; reference for gate drive	Low-inductance connection critical for minimizing shoot-through risk in bridge configurations
Gate	Control electrode for channel formation	High-impedance input requiring <2.5 Ω series resistance to damp ringing during fast edge transitions

Key Features

Feature	Design Value
Fully avalanche-rated	Withstands 1280 mJ single-pulse avalanche energy without degradation-eliminates need for external clamping in inductive load switching
Ultra-low R_DS(on)	13 mΩ enables >97% efficiency in 48 V/50 A DC-DC stages at 100 kHz with minimal thermal derating
175°C max junction temperature	Supports operation in sealed industrial enclosures with ambient up to 85°C and limited airflow
Fast body diode recovery	t_rr = 100–150 ns and Q_rr = 410–610 nC reduce switching loss and voltage overshoot in synchronous rectification

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Buck

Use Scenario: High-current BLDC motor phase leg in HVAC blowers or power tools.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off (t_d(off) = 49 ns) to minimize dead-time losses.

Use Value: 13 mΩ R_DS(on) reduces I²R loss by 35% vs. comparable 20 mΩ devices at 60 A RMS, lowering heatsink mass by 40%.

Use Scenario: 48 V input to 12 V/60 A output telecom power supply.

IC Role / Device Role / Timing Role: Synchronous rectifier with low V_SD (≤1.2 V) and controlled Q_rr to replace Schottky diode.

Use Value: Eliminates 2.5 W diode conduction loss and reduces EMI from uncontrolled diode snap-off.

Industrial Solenoid Driver

UPS Inverter Output Stage

Use Scenario: 24 V/30 A solenoid actuator with inductive kick suppression.

IC Role / Device Role / Timing Role: Clamped switching device absorbing stored energy via avalanche mode.

Use Value: 1280 mJ E_AS rating handles worst-case de-energization without snubber circuitry or voltage clamps.

Use Scenario: 3-phase inverter output stage in 5 kVA line-interactive UPS.

IC Role / Device Role / Timing Role: High-current, high-reliability switching device in IGBT replacement topology.

Use Value: TO-262 package provides mechanical stability and thermal margin over D2Pak alternatives under sustained 75 A peak loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	R_DS(on) = 8.5 mΩ, V_DS = 55 V, TO-220 package, no avalanche rating	Limited to ≤55 V systems; unsuitable for 75 V bus or unclamped inductive loads	Select only if voltage rating and avalanche robustness are not required and lower R_DS(on) justifies reduced breakdown margin
IXTH80N10L2	R_DS(on) = 10.5 mΩ, V_DS = 100 V, TO-247 package, avalanche-rated, higher Q_g (220 nC)	Higher voltage headroom but slower switching due to larger gate charge	Prefer for 100 V systems or where avalanche margin exceeds 75 V; avoid in high-frequency (>150 kHz) designs due to increased driver loss

Compared with STP80NF55-08 and IXTH80N10L2, IRF2807L uniquely balances 75 V rating, 13 mΩ on-resistance, TO-262 mechanical robustness, and guaranteed avalanche capability-making it optimal for cost-sensitive, thermally constrained 48–72 V industrial power stages where reliability under transient overload is mandatory.

Availability

IRF2807L is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and industrial DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IRF2807L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) was a pioneer in power MOSFET design, specializing in high-efficiency, ruggedized discrete semiconductors for industrial and automotive power conversion.

The HEXFET® product line was engineered specifically for high-current, high-reliability switching in harsh thermal and electrical environments-emphasizing low R_DS(on), fast switching, and intrinsic avalanche tolerance without external protection.

FAQ

Is IRF2807L pin-compatible with IRF2807SPbF?

No. IRF2807L uses the TO-262 (I²PAK) through-hole package with three leads in a straight row and an isolated metal tab. IRF2807SPbF uses the surface-mount D2Pak (TO-263) package with gull-wing leads and a solderable thermal pad. Mechanical mounting, PCB footprint, and thermal interface requirements differ fundamentally.

What is the maximum recommended gate resistor value for hard-switching at 100 kHz?

For reliable turn-off without oscillation at 100 kHz, a gate resistor of ≤2.5 Ω is recommended based on measured t_d(off) = 49 ns and Q_gd = 55 nC. Higher values increase switching time and loss; lower values risk gate driver overstress and ringing due to LS + LD parasitics.

Does IRF2807L require a heatsink in a 60 A continuous application?

Yes. At 60 A and R_DS(on) = 13 mΩ, conduction loss is 46.8 W. With R_θJC = 0.75°C/W and max T_J = 175°C, even with T_C = 85°C, junction temperature would exceed 175°C without additional heatsinking. A heatsink with R_θCA ≤ 1.5°C/W is required.

Can IRF2807L be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (see Fig 4) ensures inherent current sharing. Designers must match gate drive loop inductance and use individual 1–2 Ω gate resistors per device to prevent oscillatory current imbalance during switching transitions.

IRF2807L Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 82A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 13mOhm @ 43A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 160 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3820 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF2807L FAQ

1.How can I place an order for IRF2807L through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF2807L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF2807L reliable?

The price and inventory of IRF2807L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2807L is usually 5 days.

3.What payment methods are accepted for IRF2807L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2807L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF2807L?

IRF2807L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF2807L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF2807L?

For technical support, including IRF2807L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2807L requirements.

6.How does Aetrix verify that IRF2807L is sourced from the original manufacturer or authorized distributors?

All IRF2807L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2807L meets industry standards.

7.What is the process for return or replacement of IRF2807L?

All IRF2807L units undergo pre-shipment inspection (PSI). If there is an issue with IRF2807L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF2807L part is unused and in its original packaging.

Return procedure for IRF2807L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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