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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF2807S

Name: IRF2807S
Brand: Infineon Technologies
SKU: IRF2807S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF2807S

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF2807S.pdf

Description:: MOSFET N-CH 75V 82A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:2,513

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Product details

Overview

IRF2807S from Infineon Technologies (formerly International Rectifier) is a 75V, 82A N-channel D2Pak surface-mount power MOSFET with 13mΩ R_DS(on) at V_GS = 10V, fully avalanche-rated, and optimized for high-current DC-DC converters, motor drives, and UPS systems requiring robust switching and thermal performance.

For engineers reviewing the IRF2807S datasheet, IRF2807S pinout, IRF2807S application, or IRF2807S equivalent, key selection criteria include its 175°C junction rating, 230W T_C = 25°C power dissipation, fast 13ns turn-on delay, 48ns fall time, and low 130pF Crss for hard-switched topologies.

Technical Context

This HEXFET® device uses advanced silicon processing to minimize conduction loss while maintaining rugged unclamped inductive switching capability. Its 13mΩ on-resistance is specified at 43A and 10V gate drive, with dynamic dv/dt rating of 5.9V/ns and 1280mJ single-pulse avalanche energy at I_AS = 50A.

The D2Pak package enables high-power surface-mount operation with 0.75°C/W junction-to-case thermal resistance and supports continuous drain current up to 82A at T_C = 25°C - limited by package to 75A under typical PCB conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75V - Maximum blocking voltage before avalanche onset; suitable for 48V bus systems with margin.
R_DS(on)	13mΩ @ V_GS = 10V, I_D = 43A - Enables <1W conduction loss at 40A, critical for high-efficiency SMPS.
I_D (continuous)	82A @ T_C = 25°C - High current capacity enabled by D2Pak's low internal resistance and thermal path.
Q_g	160nC - Gate charge value directly impacts driver sizing and switching loss in 100–500kHz applications.
t_f	48ns - Fast fall time reduces switching transition losses during hard commutation.
E_AS	1280mJ - Single-pulse avalanche energy rating confirms reliability under inductive load fault conditions.
R_θJC	0.75°C/W - Low junction-to-case thermal resistance allows direct heatsink mounting without thermal interface degradation.

Pinout & Package

D2Pak (TO-263) surface-mount package with isolated tab; thermally enhanced for high-power PCB mounting. Tab is electrically connected to Drain (D).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Main current return path; low-inductance connection critical for minimizing ringing in high-di/dt circuits.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate requiring controlled drive strength to manage Q_g = 160nC.
Pin 3 (Drain)	Power output (D)	Connected to exposed metal tab; must be routed to high-current node with adequate copper area for thermal and electrical performance.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	13mΩ enables <0.8W conduction loss at 40A, reducing heatsink requirements in compact power stages.
Full avalanche rating	1280mJ E_AS and 43A I_AR support reliable operation in inductive switching without external snubbers.
175°C max junction temperature	Enables sustained operation in sealed enclosures or high-ambient industrial environments without derating.
Low Crss (130pF)	Minimizes Miller effect-induced shoot-through risk in synchronous rectification and half-bridge configurations.
D2Pak thermal performance	0.75°C/W R_θJC and 230W P_D allow direct heatsink attachment for >100W continuous output in DC-DC modules.

Applications

Motor Drive Inverter Stage

Server PSU Primary Switch

Use Scenario: 3-phase BLDC motor inverter operating at 20–50kHz PWM with peak phase current up to 70A.

IC Role / Device Role / Timing Role: High-side/low-side N-channel switch in 6-pack configuration; handles bidirectional current via body diode during dead-time.

Use Value: 13mΩ R_DS(on) and 48ns t_f reduce total losses below 2.1W per device at 45A RMS, enabling air-cooled 5kW inverters.

Use Scenario: Primary-side switch in 80+ Titanium 3.3kW server power supply using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Main switching element handling 60V bus, 50–100kHz switching, and ZVS transitions.

Use Value: 1280mJ E_AS withstands transient overcurrent during soft-start and overload, eliminating need for current-limiting shutdown circuitry.

Industrial UPS Output Stage

EV Onboard Charger DC-Link Switch

Use Scenario: Bidirectional 400V DC-AC inverter stage in 10kVA uninterruptible power supply with 10ms transfer time.

IC Role / Device Role / Timing Role: Synchronous rectifier and inverter switch; conducts reverse current during regeneration and grid feedback.

Use Value: 175°C T_J rating and 230W P_D sustain 98% efficiency at full load without forced airflow in enclosed cabinets.

Use Scenario: DC-link switching in 11kW AC/DC onboard charger for battery electric vehicles, operating at 40kHz with 400V nominal bus.

IC Role / Device Role / Timing Role: High-current, low-loss switch in interleaved boost or dual-active-bridge stage.

Use Value: 13mΩ R_DS(on) and 0.75°C/W R_θJC limit junction rise to <110°C at 65A continuous, meeting ASIL-B thermal safety targets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	75V, 80A, R_DS(on) = 8.5mΩ, TO-220 package, no avalanche rating	Limited to lower-reliability consumer-grade supplies due to missing E_AS spec	Select when cost-sensitive and avalanche stress is absent; requires larger heatsink due to higher R_θJA.
IXFH80N075	75V, 80A, R_DS(on) = 9.5mΩ, TO-247 package, 1000mJ E_AS	Better thermal margin but incompatible with surface-mount assembly lines	Prefer for prototyping or low-volume industrial designs where through-hole is acceptable and higher avalanche margin is needed.

Compared with STP80NF55-08 and IXFH80N075, the IRF2807S uniquely balances D2Pak manufacturability, 1280mJ avalanche robustness, and 13mΩ on-resistance - making it optimal for high-volume, surface-mount, high-reliability power conversion where thermal and fault resilience are co-constrained.

Availability

IRF2807S is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for IRF2807S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices.

The HEXFET® product line was developed to deliver ultra-low on-resistance and rugged switching performance for high-efficiency, high-reliability power conversion in demanding industrial and computing applications.

FAQ

What is the maximum continuous drain current for IRF2807S at 100°C case temperature?

The maximum continuous drain current is 58A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, not package limitation - the D2Pak itself supports up to 75A under standard PCB mounting conditions.

Is IRF2807S suitable for synchronous rectification in LLC resonant converters?

Yes - its low 13mΩ R_DS(on), fast 48ns fall time, and low 130pF Crss make it suitable for secondary-side synchronous rectification in 300–500kHz LLC converters. However, body diode reverse recovery (t_rr = 100–150ns) requires careful gate timing to avoid cross-conduction losses.

Does IRF2807S have lead-free and RoHS-compliant packaging?

Yes - the "PbF" suffix in IRF2807SPbF indicates lead-free termination and full compliance with RoHS Directive 2011/65/EU. The device uses matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) for surface-mount reflow.

Can IRF2807S replace IRF2807LPbF in a design?

Yes - both share identical electrical specifications and die; only package differs (D2Pak vs. TO-262). Replacement requires verifying PCB footprint compatibility, thermal pad layout, and mechanical clearance. D2Pak offers superior thermal performance (0.75°C/W vs. ~1.0°C/W), but TO-262 may be preferred for low-profile or through-hole assembly.

IRF2807S Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 82A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 13mOhm @ 43A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 160 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3820 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF2807S FAQ

1.How can I place an order for IRF2807S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF2807S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF2807S reliable?

The price and inventory of IRF2807S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2807S is usually 5 days.

3.What payment methods are accepted for IRF2807S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2807S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF2807S?

IRF2807S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF2807S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF2807S?

For technical support, including IRF2807S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2807S requirements.

6.How does Aetrix verify that IRF2807S is sourced from the original manufacturer or authorized distributors?

All IRF2807S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2807S meets industry standards.

7.What is the process for return or replacement of IRF2807S?

All IRF2807S units undergo pre-shipment inspection (PSI). If there is an issue with IRF2807S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF2807S part is unused and in its original packaging.

Return procedure for IRF2807S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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