Infineon Technologies IRF2807SPBF

Overview

IRF2807SPBF from Infineon Technologies (formerly International Rectifier) is a N-channel D2Pak-packaged HEXFET® Power MOSFET with 75V V_DS, 13mΩ R_DS(on) at V_GS = 10V and 43A I_D, rated for continuous 82A drain current at T_C = 25°C. It delivers fast switching (t_r = 64ns, t_f = 48ns), full avalanche rating (E_AS = 1280mJ), and operates up to 175°C junction temperature - deployed in high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF2807SPBF datasheet, IRF2807SPBF pinout, IRF2807SPBF application, or IRF2807SPBF equivalent, key selection criteria include its 13mΩ on-resistance at 10V gate drive, 230W power dissipation capability, D2Pak thermal performance (R_θJC = 0.75°C/W), and body diode recovery characteristics (t_rr = 100–150ns, Q_rr = 410–610nC).

Technical Context

This MOSFET employs advanced HEXFET processing to minimize R_DS(on) per die area while maintaining ruggedness against repetitive avalanche stress (I_AR = 43A, E_AR = 23mJ). Its gate charge profile (Q_g = 160nC, Q_gd = 55nC) supports efficient hard-switching in synchronous buck topologies operating up to 200kHz.

The device integrates a low-V_SD body diode (1.2V at 43A, T_J = 25°C) with controlled reverse recovery (dv/dt = 5.9V/ns), enabling reliable operation in freewheeling paths without external snubbers in industrial motor control inverters.

Key Specifications

Pinout & Package

IRF2807SPBF uses the surface-mount D2Pak (TO-263) package: 3-pin, single-die layout with exposed drain pad for thermal and electrical connection. The package supports PCB copper area heatsinking and achieves lowest R_DS(on) among SMT power MOSFETs in its voltage class.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP80NF55-08 and IXTP82N10P, IRF2807SPBF uniquely balances 75V rating, D2Pak mountability, full avalanche ruggedness, and optimized gate charge for high-frequency hard-switching - making it preferred for space-constrained, thermally demanding 48V industrial power stages.

Availability

IRF2807SPBF is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and server VRMs requiring stable component supply across multi-year production cycles.

Supply support for IRF2807SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with roots in International Rectifier's power MOSFET legacy.

The HEXFET® product line was engineered specifically for high-efficiency, high-reliability power conversion in industrial motor drives, telecom rectifiers, and renewable energy inverters - emphasizing low R_DS(on), robust avalanche capability, and thermal resilience.

FAQ

What is the maximum safe operating area (SOA) limit for IRF2807SPBF at 100°C case temperature?

At T_C = 100°C, the SOA is limited by R_DS(on) to 43A continuous drain current at V_DS ≤ 10V, or 25A at V_DS = 40V for pulse widths ≤ 10ms. Derating follows linear 1.5W/°C beyond 25°C case temperature, with peak pulsed current capped at 280A for ≤100µs.

Can IRF2807SPBF be used in synchronous rectification without an external Schottky diode?

Yes - its body diode has V_SD = 1.2V at 43A and t_rr = 100–150ns, enabling direct synchronous rectification in 48V→12V buck converters up to 200kHz. However, for <100ns recovery or <0.8V forward drop, an external Schottky remains preferable in ultra-high-efficiency designs.

What PCB layout practices are required to achieve the rated 230W power dissipation?

To reach 230W, the D2Pak drain tab must be soldered to ≥400mm² of 2oz copper on inner and outer layers, with ≥6 thermal vias (0.3mm diameter) connecting to internal ground planes. Source and gate traces require ≥0.5mm width to limit parasitic inductance below 5nH for stable 5.9V/ns dv/dt operation.

Is IRF2807SPBF compatible with lead-free reflow profiles per IPC-J-STD-020D?

Yes - the SPbF suffix confirms RoHS-compliant lead-free termination. It supports peak reflow temperatures up to 260°C for 10 seconds (measured 1.6mm from case), with ramp rates ≤3°C/s and preheat soak at 150–200°C for 90–120 seconds, matching standard Class 3 assembly requirements.