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Infineon Technologies IRF2807STRL

Part No.:
IRF2807STRL
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRF2807STRL.pdf
Description:
MOSFET N-CH 75V 82A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,124

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Product details

Overview

IRF2807STRL from Infineon Technologies (formerly International Rectifier) is a N-channel D2Pak surface-mount power MOSFET with 75V VBRDSS, 13mΩ RDS(on) at VGS = 10V and 43A ID, rated for continuous operation up to 175°C junction temperature. It delivers high-current switching in DC-DC converters, motor drives, and UPS systems where low conduction loss and robust avalanche capability are critical.

For engineers reviewing the IRF2807STRL datasheet, IRF2807STRL pinout, IRF2807STRL application, or IRF2807STRL equivalent, key selection factors include its 160nC total gate charge, 55nC Miller charge, 100ns reverse recovery time, and D2Pak thermal resistance of 0.75°C/W junction-to-case - all essential for hard-switched, high-efficiency power stage design.

Technical Context

This HEXFET® device uses advanced silicon processing to minimize RDS(on) per die area while maintaining fast switching (td(on) = 13ns, tf = 48ns) and full unclamped inductive switching (UIS) ruggedness. Its body diode exhibits 1.2V forward drop at 43A and 100–150ns trr under standardized di/dt = 100A/µs conditions.

The D2Pak package enables high-power surface-mount operation with 230W power dissipation at TC = 25°C and linear derating of 1.5W/°C above that point. Thermal performance is validated by RθJC = 0.75°C/W and RθJA = 40°C/W on 1"² FR-4 PCB.

Key Specifications

ParameterValue and Actual Design Meaning
VBRDSS75V - maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in buck, half-bridge, and flyback topologies
RDS(on)13mΩ @ VGS = 10V, ID = 43A - determines conduction loss and heatsink sizing in high-current paths
Qg160nC - total gate charge defining driver strength requirement and switching energy loss
tr/tf64ns/48ns - rise/fall times directly impacting Esw and EMI generation in hard-switched circuits
EAS1280mJ - single-pulse avalanche energy rating enabling reliable operation during inductive turn-off transients
RθJC0.75°C/W - junction-to-case thermal resistance used to calculate die temperature from measured case temperature
ID @ TC = 100°C58A - derated continuous current at elevated case temperature, critical for thermal design margining

Pinout & Package

D2Pak (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (Drain, Source, Gate) optimized for high-current PCB layout and thermal transfer.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main high-side current path outputElectrically and thermally connected to large copper pour; carries full load current and dissipates heat directly to PCB
SourceReference node for gate drive and current sensingLow-inductance return path; used for source-shunt sensing and gate driver reference in high-side configurations
GateControl terminal for channel modulationHigh-impedance input requiring <160nC charge; sensitive to ringing and requires proper gate resistor selection (RG = 2.5Ω typical)

Key Features

FeatureDesign Value
Ultra-low RDS(on)13mΩ enables <0.24W conduction loss at 43A, reducing heatsink requirements in 48V industrial power supplies
Full avalanche rating1280mJ EAS supports reliable operation without external snubbers in inductive load switching
Fast body diode100ns trr and 410nC Qrr reduce commutation losses in synchronous rectification and bidirectional converters
175°C operationExtended junction temperature range allows deployment in sealed enclosures or high-ambient environments like automotive under-hood
D2Pak thermal performance0.75°C/W RθJC delivers >90% of TO-220 thermal capability in surface-mount form factor

Applications

Motor Drive InverterDC-DC Synchronous Buck

Use Scenario: 3-phase BLDC motor control in HVAC blowers and industrial pumps operating at 48V bus.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 6-pack inverter bridge; handles 43A peak phase current with <100ns dead-time tolerance.

Use Value: 13mΩ RDS(on) reduces I²R losses by 35% vs. comparable 20mΩ MOSFETs, lowering thermal stress on gate drivers and magnetics.

Use Scenario: Primary switch in 48V-to-12V isolated DC-DC converter for telecom power shelves.

IC Role / Device Role / Timing Role: High-side primary-side switch in active-clamp forward or LLC resonant topology; operates at 200kHz with 50% duty cycle.

Use Value: 160nC Qg enables efficient driving with low-power gate drivers (e.g., UCC27531), minimizing driver supply loading.

Uninterruptible Power SupplyIndustrial Battery Charger

Use Scenario: Bidirectional DC link switch in online UPS systems supporting 1kVA output with battery backup.

IC Role / Device Role / Timing Role: Inverter-stage MOSFET conducting 82A continuous current during mains failure; switches at ≤50kHz with soft-start sequencing.

Use Value: Fully rated 280A pulsed drain current (IDM) accommodates surge loads during generator transfer without derating.

Use Scenario: Output stage switch in 48V lithium-ion battery charger delivering 30A constant current.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side buck converter; body diode conducts during light-load discontinuous conduction mode (DCM).

Use Value: 1.2V VSD at 43A and 100ns trr minimize reverse recovery losses, improving efficiency by 1.2% at 10% load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP75NF7575V VBRDSS, 12mΩ RDS(on), but higher Qg = 190nC and no specified EAS ratingLacks documented avalanche ruggedness; unsuitable for inductive switching without snubbersPrefer for low-RDS(on) priority in resistive loads only
IXTH82N10L2100V VBRDSS, 11mΩ RDS(on), 200nC Qg, TO-247 packageHigher voltage rating and larger package increase board space and cost; better for 72V battery systemsChoose when 100V blocking or higher avalanche margin is required

Compared with STP75NF75 and IXTH82N10L2, IRF2807STRL offers balanced trade-offs: lower gate charge than IXTH82N10L2 for faster switching, and verified avalanche capability absent in STP75NF75 - making it optimal for cost-sensitive, high-reliability 48–72V industrial inverters.

Availability

IRF2807STRL is available at Aetrix Electronics and suitable for motor drive inverters, DC-DC synchronous buck converters, and uninterruptible power supply systems requiring stable component supply across multi-year production cycles.

Supply support for IRF2807STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with roots in International Rectifier's pioneering HEXFET® technology.

The IRF2807STRL belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial motor control, renewable energy, and server power applications.

FAQ

What is the maximum continuous drain current for IRF2807STRL at 100°C case temperature?

The maximum continuous drain current is 58A at TC = 100°C with VGS = 10V, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating beyond 25°C and reflects package-limited current handling rather than silicon capability alone.

Does IRF2807STRL have a qualified lead-free finish?

Yes, IRF2807STRL is manufactured with a lead-free (Pb-free) finish compliant with RoHS Directive 2011/65/EU. The "PbF" suffix in related part numbers (e.g., IRF2807SPbF) confirms this qualification, and the device meets JEDEC J-STD-020 moisture sensitivity level 3.

Can IRF2807STRL be used in parallel configurations?

Yes - its positive RDS(on) temperature coefficient (0.074V/°C dVBRDSS/dTJ) ensures inherent current sharing stability. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling to maintain uniform junction temperatures across devices.

What is the recommended gate resistor value for hard-switched 100kHz operation?

A 2.5Ω gate resistor is recommended for 100kHz hard-switched operation, based on the datasheet's td(off) = 49ns test condition. This value balances switching speed against gate driver stress and EMI; values below 2Ω may cause ringing, while above 5Ω increases switching losses disproportionately.

IRF2807STRL Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
75 V
Current - Continuous Drain (Id) @ 25°C:
82A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
13mOhm @ 43A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
160 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3820 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
230W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRF2807STRL FAQ

1.How can I place an order for IRF2807STRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF2807STRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF2807STRL reliable?

The price and inventory of IRF2807STRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2807STRL is usually 5 days.

3.What payment methods are accepted for IRF2807STRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2807STRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF2807STRL?

IRF2807STRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF2807STRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF2807STRL?

For technical support, including IRF2807STRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2807STRL requirements.

6.How does Aetrix verify that IRF2807STRL is sourced from the original manufacturer or authorized distributors?

All IRF2807STRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2807STRL meets industry standards.

7.What is the process for return or replacement of IRF2807STRL?

All IRF2807STRL units undergo pre-shipment inspection (PSI). If there is an issue with IRF2807STRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF2807STRL part is unused and in its original packaging.

Return procedure for IRF2807STRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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