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Infineon Technologies IRF2807STRRPBF
- Part No.:
- IRF2807STRRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF2807STRRPBF.pdf
- Description:
- MOSFET N-CH 75V 82A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,166
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Product details
Overview
IRF2807STRRPBF from Infineon Technologies (formerly International Rectifier) is a surface-mount N-channel HEXFET® Power MOSFET in D2Pak (TO-263) package, rated for 75V VDS, 13 mΩ RDS(on) at VGS = 10 V and 43 A, with 230 W power dissipation and full avalanche rating. It serves as a high-current switching element in DC-DC converters, motor drives, and UPS systems where low conduction loss and rugged transient handling are critical.
For engineers reviewing the IRF2807STRRPBF datasheet, IRF2807STRRPBF pinout, IRF2807STRRPBF application, or IRF2807STRRPBF equivalent, key selection criteria include its 75 V breakdown voltage, 13 mΩ on-resistance at 10 V gate drive, 280 A pulsed drain current capability, 160 nC total gate charge, and D2Pak thermal performance enabling >200 W PCB-mount operation.
Technical Context
This MOSFET employs advanced silicon processing to minimize RDS(on) per die area while maintaining fast switching (td(on) = 13 ns, tf = 48 ns) and robust dv/dt immunity (5.9 V/ns). Its integrated body diode features 100–150 ns reverse recovery time and 410–610 nC Qrr, supporting synchronous rectification and hard-switched topologies.
The device is fully avalanche-rated (EAS = 1280 mJ) and specified across –55°C to +175°C junction temperature range. Thermal resistance is 0.75°C/W junction-to-case and 40°C/W junction-to-ambient (1"² FR-4), confirming suitability for high-power surface-mount designs without heatsink attachment in moderate airflow environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - Maximum blocking voltage before avalanche; sets upper limit for bus voltage in buck, half-bridge, and flyback primary switches. |
| RDS(on) | 13 mΩ @ VGS = 10 V, ID = 43 A - Directly determines I²R conduction loss; enables <1.2 W loss at 30 A continuous drain current. |
| ID (TC = 25°C) | 82 A - Continuous current rating under ideal case cooling; derates to 58 A at 100°C case temperature. |
| Qg | 160 nC - Total gate charge dictates driver strength requirement; necessitates ≥2 A peak gate current for 100 ns switching transitions. |
| EAS | 1280 mJ - Single-pulse avalanche energy rating confirms robustness against inductive turn-off transients without external snubbers. |
| RθJC | 0.75 °C/W - Enables direct thermal interface to heatsink; supports >200 W steady-state power dissipation with ≤150°C junction rise above 25°C case. |
Pinout & Package
D2Pak (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current PCB routing and thermal management.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Tab/Pad) | Drain (D) | Electrically and thermally connected to large copper area; carries full load current and dissipates heat directly to PCB heatsink. |
| Pin 2 | Gate (G) | High-impedance control terminal; requires low-inductance gate loop to manage 160 nC charge and suppress oscillation during fast switching. |
| Pin 3 | Source (S) | Power return path and reference for gate drive; internal source inductance (LS) affects switching waveform fidelity and dV/dt-induced shoot-through risk. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 13 mΩ enables <1.2 W conduction loss at 30 A, reducing thermal burden in compact 48 V industrial power supplies. |
| Full avalanche rating | 1280 mJ single-pulse energy tolerance eliminates need for external clamping in relay drivers and solenoid controls. |
| Fast switching speed | 13 ns turn-on delay + 48 ns fall time supports >200 kHz PWM operation in isolated DC-DC converters with minimal switching loss. |
| High-temperature operation | Rated up to +175°C junction temperature ensures reliability in sealed enclosures and automotive engine-bay proximity applications. |
Applications
| Motor Drive Inverter | DC-DC Synchronous Buck |
|---|---|
Use Scenario: 3-phase BLDC inverter stage in HVAC blowers and industrial pumps operating from 48 V DC bus. IC Role / Device Role / Timing Role: High-side and low-side N-channel switch in 6-step commutation; handles 40–60 A peak phase current with <100 ns dead-time control. Use Value: 13 mΩ RDS(on) reduces conduction loss by 35% vs. comparable 20 mΩ devices, lowering heatsink size and system acoustic noise. | Use Scenario: Primary-side synchronous rectifier in 48 V → 12 V telecom power module delivering 60 A output. IC Role / Device Role / Timing Role: Low-side switch in non-isolated buck converter; driven with 10 V gate voltage and synchronized to high-side FET. Use Value: 160 nC Qg allows clean 500 kHz switching with standard gate drivers, achieving >95% efficiency at full load. |
| Uninterruptible Power Supply (UPS) | Industrial Relay/Solenoid Driver |
Use Scenario: Bidirectional DC link switch in online double-conversion UPS with 72 V battery bank and 230 V AC output. IC Role / Device Role / Timing Role: Output stage switch in H-bridge inverter; sustains repetitive 280 A pulsed current during overload and short-circuit events. Use Value: Fully avalanche-rated design withstands 1280 mJ surge energy without failure, eliminating crowbar circuitry and improving MTBF. | Use Scenario: Solid-state replacement for mechanical relays controlling 24 V/15 A hydraulic valves in factory automation PLC I/O modules. IC Role / Device Role / Timing Role: Single-ended load switch with integrated freewheeling diode; switched at <10 Hz with controlled turn-on slew rate. Use Value: 175°C max junction temperature permits operation in sealed DIN-rail enclosures with ambient up to 85°C, avoiding thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF75 | 75 V VDS, 12.5 mΩ RDS(on), 75 A ID, TO-220 package | Through-hole mounting only; higher RθJA (62°C/W) limits power density in space-constrained designs. | Preferred for prototyping or low-volume through-hole assemblies where thermal mass of leadframe suffices. |
| IXFH72N30P | 300 V VDS, 22 mΩ RDS(on), 72 A ID, TO-247 package | Higher voltage rating but higher on-resistance; unsuitable for 48 V systems where 13 mΩ loss advantage is critical. | Only appropriate if system requires >100 V margin or legacy 300 V bus architecture. |
Compared with STP75NF75 and IXFH72N30P, IRF2807STRRPBF delivers optimal balance of low RDS(on), surface-mount thermal performance, and avalanche ruggedness for 48–75 V industrial switching-making it uniquely suited for high-density, high-reliability power stages where D2Pak footprint and 0.75°C/W RθJC are decisive.
Availability
IRF2807STRRPBF is available at Aetrix Electronics and suitable for motor drive inverters, DC-DC synchronous buck converters, and uninterruptible power supply (UPS) systems requiring stable component supply and long-term production continuity.
Supply support for IRF2807STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in power MOSFET innovation through its acquisition of International Rectifier.
The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability power conversion in industrial, computing, and renewable energy systems-emphasizing low RDS(on), fast switching, and rugged avalanche performance.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRF2807STRRPBF supports 58 A continuous drain current at TC = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2Pak package and must be validated against actual board layout, copper area, and airflow conditions using the 0.75°C/W RθJC value.
Is the body diode suitable for synchronous rectification?
Yes-the integrated body diode has a typical reverse recovery time of 100–150 ns and Qrr of 410–610 nC at IF = 43 A, making it viable for synchronous rectification in medium-frequency buck converters (<500 kHz), though discrete Schottky diodes remain preferable for ultra-low VSD requirements.
Does this part require a gate resistor for safe operation?
A gate resistor is required to control dV/dt and prevent parasitic oscillation during switching. With 160 nC total gate charge and fast intrinsic switching, a 2.5 Ω resistor is recommended for turn-off (per datasheet test condition), while 5–10 Ω may be used for turn-on to balance speed and ringing suppression in high-noise environments.
Can IRF2807STRRPBF replace IRF2807LPbF in a design?
Yes-IRF2807STRRPBF (D2Pak) and IRF2807LPbF (TO-262) share identical electrical specifications and silicon die. The substitution requires PCB footprint revision and thermal validation, as D2Pak offers lower RθJC (0.75°C/W vs. ~1.0°C/W) but demands proper solder paste stencil and reflow profile for the large drain pad.
IRF2807STRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 13mOhm @ 43A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 160 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3820 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 230W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF2807STRRPBF FAQ
1.How can I place an order for IRF2807STRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF2807STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF2807STRRPBF reliable?
The price and inventory of IRF2807STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2807STRRPBF is usually 5 days.
3.What payment methods are accepted for IRF2807STRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2807STRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF2807STRRPBF?
IRF2807STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF2807STRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF2807STRRPBF?
For technical support, including IRF2807STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2807STRRPBF requirements.
6.How does Aetrix verify that IRF2807STRRPBF is sourced from the original manufacturer or authorized distributors?
All IRF2807STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2807STRRPBF meets industry standards.
7.What is the process for return or replacement of IRF2807STRRPBF?
All IRF2807STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF2807STRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF2807STRRPBF part is unused and in its original packaging.
Return procedure for IRF2807STRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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