Infineon Technologies IRF2807Z

Overview

IRF2807Z from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 package, rated for 75V V_DSS, 9.4mΩ R_DS(on) at V_GS = 10V, and 75A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 79ns), and 100% production-tested repetitive avalanche capability up to I_AR = 53A - designed for high-efficiency automotive power stages including DC-DC converters and motor drivers.

For engineers reviewing the IRF2807Z datasheet, IRF2807Z pinout, IRF2807Z application, or IRF2807Z equivalent, key selection criteria include its low conduction loss at high current, robust unclamped inductive switching performance, thermal derating behavior above 100°C case temperature, and body diode recovery characteristics (Q_rr = 80–120nC, t_rr = 46–69ns) critical for synchronous rectification and H-bridge operation.

Technical Context

This MOSFET employs advanced silicon process technology to minimize R_DS(on) per die area while maintaining ruggedness against dynamic stress. Its gate charge profile (Q_g = 71–110nC, Q_gd = 28–42nC) supports efficient high-frequency switching up to several hundred kHz when driven with appropriate gate resistance (e.g., R_G = 6.2Ω).

The device integrates a co-packaged intrinsic body diode with V_SD ≤ 1.3V at 53A and exhibits controlled reverse recovery (dI_rr/dt ≤ 100A/µs), enabling reliable operation in hard-switched topologies without external snubbers. Thermal design must account for R_θJC = 0.90°C/W and R_θJA = 40°C/W on PCB mount.

Key Specifications

Pinout & Package

IRF2807Z uses the TO-262 (I²PAK) package: 3-pin, surface-mount compatible with through-hole footprint, featuring isolated tab connected to Drain. Thermal path optimized via copper leadframe and direct die-to-case interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP75NF75 and IXTH75N10L2, IRF2807Z delivers superior thermal robustness (175°C rating), verified avalanche endurance, and TO-262 packaging optimized for automated assembly - making it the preferred choice for AEC-Q101-compliant automotive power designs where reliability and manufacturability are prioritized.

Availability

IRF2807Z is available at Aetrix Electronics and suitable for automotive DC-DC converters, engine control unit (ECU) power stages, and on-board charger (OBC) input stages requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IRF2807Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with deep expertise in silicon-based power devices.

The IRF2807Z belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in harsh under-hood environments - emphasizing thermal resilience, avalanche ruggedness, and AEC-Q101 compliance.

FAQ

Is IRF2807Z qualified to AEC-Q101 standards?

Yes, IRF2807Z is AEC-Q101 qualified for automotive applications. This qualification includes stress testing for temperature cycling, humidity bias, and highly accelerated life testing (HALT) to ensure reliability in under-hood environments up to 175°C junction temperature. The device meets all test conditions specified in the AEC-Q101-003 standard for discrete semiconductors.

What is the recommended gate resistor value for IRF2807Z in a 200kHz PWM application?

For 200kHz operation, a gate resistor of 4.7Ω to 6.2Ω is recommended to balance switching speed and EMI. With Q_g = 110nC max and typical driver output impedance <2Ω, this yields ~60–80ns gate rise time, minimizing overlap loss while avoiding excessive dv/dt-induced noise or shoot-through in half-bridge configurations.

Can IRF2807Z replace IRF2807 in existing designs?

Yes, IRF2807Z is a direct drop-in replacement for IRF2807, sharing identical pinout, package (TO-262), and electrical specifications. The "Z" suffix denotes enhanced manufacturing process and improved repetitive avalanche performance - confirmed by 100% production testing per datasheet Figure 12a–12b - with no layout or drive circuit changes required.

Does IRF2807Z require a heatsink in a 50A continuous application?

Yes, a heatsink is mandatory. At 50A and R_DS(on) = 9.4mΩ, conduction loss is 23.5W. With R_θJC = 0.90°C/W and ambient at 85°C, even a modest 10°C/W heatsink yields T_J ≈ 175°C - the absolute maximum. A 5°C/W heatsink with forced airflow is recommended to maintain T_J ≤ 150°C and ensure long-term reliability.