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Infineon Technologies IRF2807ZLPBF
- Part No.:
- IRF2807ZLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF2807ZLPBF.pdf
- Description:
- MOSFET N-CH 75V 75A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:4,159
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Product details
Overview
IRF2807ZLPBF from Infineon Technologies (formerly International Rectifier) is a 75V, 75A N-channel enhancement-mode Power MOSFET in TO-262 (I²PAK) package, featuring 9.4mΩ RDS(on) at VGS = 10V, 175°C maximum junction temperature, and rated for repetitive avalanche energy up to 300mJ - used in high-current DC-DC converters, motor drives, and uninterruptible power supplies.
For engineers reviewing the IRF2807ZLPBF datasheet, IRF2807ZLPBF pinout, IRF2807ZLPBF application, or IRF2807ZLPBF equivalent, key selection criteria include its 75A continuous drain rating at TC = 25°C, 7.5–9.4mΩ on-resistance range, 110nC total gate charge, 42nC Miller charge, and validated unclamped inductive switching capability with IAS = 53A.
Technical Context
This device employs advanced HEXFET® silicon processing to minimize conduction losses while maintaining robust switching performance. Its 175°C thermal limit enables operation in high ambient environments without derating, and its 42nC Qgd/71–110nC Qg supports efficient gate drive design in hard-switched topologies.
The integrated body diode exhibits 1.3V forward voltage at 53A and 46–69ns reverse recovery time, enabling synchronous rectification and freewheeling in buck and half-bridge configurations. Repetitive avalanche is characterized per Fig. 12a–12b and Fig. 15–16, with validated 300mJ single-pulse EAS and 200mJ EAR at 10% duty cycle.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 75V - Maximum blocking voltage before avalanche onset; defines safe operating voltage margin in 48V bus systems. |
| RDS(on) | 7.5–9.4mΩ @ VGS = 10V - Directly determines conduction loss: ~5.3W at 75A, critical for thermal management in high-current PCB layouts. |
| ID (continuous) | 75A @ TC = 25°C - Package-limited current capacity; requires heatsinking to sustain >63A above 100°C case temperature. |
| Qg | 71–110nC - Total gate charge dictates driver strength requirement; 100nC demands ≥2A peak gate current for 100ns turn-on. |
| EAS | 300mJ - Single-pulse avalanche energy rating; enables reliable operation under inductive load turn-off transients without snubbers. |
| TJ(max) | 175°C - Enables extended lifetime in sealed enclosures or high-ambient industrial environments without active cooling. |
| Coss(eff) | 440pF - Effective output capacitance at 80% VDSS; impacts zero-voltage switching feasibility and resonant tank design. |
Pinout & Package
IRF2807ZLPBF uses the TO-262 (I²PAK) surface-mount package with isolated tab, optimized for high-current PCB mounting and thermal transfer via backside copper pour. The three-terminal configuration supports low-inductance source return paths.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main high-side current path | Connected to internal die substrate; electrically tied to exposed metal tab - must be isolated from heatsink unless referenced to system ground. |
| Source (S) | Power return node | Low-inductance connection point for current sensing and gate drive reference; internal source bond wires contribute 7.5nH inductance. |
| Gate (G) | Control input | High-impedance MOS control terminal; requires <110nC charge to fully enhance; sensitive to ESD and ringing due to 240pF Crss. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 9.4mΩ max at 10V drive - reduces I²R losses by >30% vs. legacy 75V MOSFETs, enabling smaller heatsinks in 50–100A designs. |
| Repetitive avalanche rated | Validated to 200mJ at 10% duty cycle - eliminates need for external clamping in motor phase-leg and UPS inverter applications. |
| Fast switching with low Qgd/Qg ratio | Qgd = 42nC / Qg = 110nC ≈ 38% - improves hard-switching efficiency and reduces Miller-induced shoot-through risk. |
| 175°C junction rating | Enables full 75A current delivery at TC = 100°C per Fig. 9 - supports fanless operation in industrial control cabinets. |
| Lead-free and RoHS-compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 - allows standard reflow without pre-bake, reducing manufacturing cost. |
Applications
| Motor Drive Inverter | DC-DC Synchronous Buck |
|---|---|
Use Scenario: Three-phase 48V BLDC motor inverter with 50A peak phase current and 20kHz PWM switching. IC Role / Device Role / Timing Role: High-side and low-side switching element in each leg; handles bidirectional current during PWM commutation and regenerative braking. Use Value: 9.4mΩ RDS(on) limits conduction loss to ≤3.5W per device at 50A, while 175°C rating ensures reliability under sustained torque load without forced air. | Use Scenario: 12V-to-1V, 100A multiphase VRM for server CPU power delivery. IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch); conducts during bottom-half of switching cycle with body diode conduction minimized by fast turn-on. Use Value: 1.3V VSD and 46ns trr reduce reverse recovery loss; 7.5mΩ typical RDS(on) cuts synchronous rectifier loss by 40% vs. Schottky alternatives. |
| Uninterruptible Power Supply (UPS) | Industrial DC Power Distribution |
Use Scenario: 2kVA online double-conversion UPS with 48V battery input and 230VAC output via H-bridge inverter. IC Role / Device Role / Timing Role: Output stage switching device in full-bridge topology; subjected to unclamped inductive turn-off during fault conditions. Use Value: 300mJ EAS and 53A IAS allow safe operation during short-circuit events without external snubbers, improving system MTBF. | Use Scenario: 75A DC distribution board for factory automation PLC racks with hot-swap capability. IC Role / Device Role / Timing Role: Load switch controlling power to downstream modules; must withstand inrush current and support controlled soft-start. Use Value: 75A continuous rating and 350A pulsed IDM accommodate 10× inrush surges; TO-262 package enables direct bolt-down to copper busbar for <0.9°C/W RθJC. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF75 | 75V/80A, RDS(on) = 10.5mΩ, Qg = 120nC, TO-220 package | Higher gate charge increases driver loss; TO-220 requires mechanical mounting vs. TO-262 surface-mount | Prefer when mechanical mounting and lower-cost packaging outweigh gate drive efficiency needs. |
| IXTH75N10L2 | 100V/75A, RDS(on) = 11.5mΩ, Qg = 95nC, TO-247 package | Higher VDSS sacrifices conduction efficiency; TO-247 offers better thermal resistance but larger footprint | Choose only if 100V blocking margin is required and PCB space permits larger outline. |
Compared with STP75NF75 and IXTH75N10L2, IRF2807ZLPBF delivers the lowest RDS(on) and best thermal interface for TO-262-mounted high-current applications, making it optimal where conduction loss and compact layout are prioritized over higher voltage headroom or legacy through-hole assembly.
Availability
IRF2807ZLPBF is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and industrial DC power distribution requiring stable component supply across multi-year production cycles.
Supply support for IRF2807ZLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with headquarters in Munich, Germany.
This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion and motor control systems where ruggedness and thermal resilience are critical.
FAQ
What is the maximum continuous drain current for IRF2807ZLPBF at 100°C case temperature?
At TC = 100°C, the continuous drain current is 63A per Figure 9 in the datasheet. This reflects package thermal limitation rather than silicon capability, and assumes proper PCB copper area and thermal vias per AN-994 guidelines.
Does IRF2807ZLPBF support gate drive at 5V logic levels?
No - the gate threshold voltage ranges from 2.0V to 4.0V, but full enhancement requires ≥10V to achieve specified 9.4mΩ RDS(on). At 5V, RDS(on) rises significantly (>50mΩ), increasing conduction loss and thermal stress.
Can IRF2807ZLPBF be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(on) (see Fig. 10) ensures inherent current sharing stability. However, matched gate drive impedance and symmetrical PCB layout are essential to avoid dynamic current imbalance during switching transitions.
Is the TO-262 package of IRF2807ZLPBF electrically isolated?
No - the drain is internally connected to the exposed metal tab. Electrical isolation from the heatsink or PCB ground plane must be implemented using insulating thermal pads or ceramic washers to prevent short circuits.
IRF2807ZLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 9.4mOhm @ 53A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3270 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 170W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRF2807ZLPBF FAQ
1.How can I place an order for IRF2807ZLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF2807ZLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF2807ZLPBF reliable?
The price and inventory of IRF2807ZLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2807ZLPBF is usually 5 days.
3.What payment methods are accepted for IRF2807ZLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2807ZLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF2807ZLPBF?
IRF2807ZLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF2807ZLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF2807ZLPBF?
For technical support, including IRF2807ZLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2807ZLPBF requirements.
6.How does Aetrix verify that IRF2807ZLPBF is sourced from the original manufacturer or authorized distributors?
All IRF2807ZLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2807ZLPBF meets industry standards.
7.What is the process for return or replacement of IRF2807ZLPBF?
All IRF2807ZLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF2807ZLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF2807ZLPBF part is unused and in its original packaging.
Return procedure for IRF2807ZLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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