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Infineon Technologies IRF2807ZS
- Part No.:
- IRF2807ZS
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF2807ZS.pdf
- Description:
- MOSFET N-CH 75V 75A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,332
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Product details
Overview
IRF2807ZS from Infineon Technologies (formerly International Rectifier) is an N-channel D2PAK-packaged automotive-grade HEXFET® Power MOSFET with 75V VDSS, 9.4mΩ RDS(on) at VGS = 10V, 75A continuous drain current at TC = 25°C, and 175°C maximum junction temperature - designed for high-efficiency DC-DC converters and motor control in engine management systems.
For engineers reviewing the IRF2807ZS datasheet, IRF2807ZS pinout, IRF2807ZS application, or IRF2807ZS equivalent, key selection criteria include its 440pF Coss(eff), 71nC total gate charge, 46–69ns reverse recovery time, repetitive avalanche rating up to Tjmax, and thermal resistance of 0.90°C/W junction-to-case - critical for thermally constrained automotive power stages.
Technical Context
This MOSFET employs advanced silicon process technology to minimize conduction losses while maintaining robust switching performance under high di/dt conditions. Its body diode exhibits 1.3V forward voltage at 53A and 80–120nC reverse recovery charge, enabling reliable operation in synchronous rectification and unclamped inductive switching.
The device supports fast turn-on (18ns delay, 79ns rise) and turn-off (40ns delay, 45ns fall) with gate threshold voltage between 2.0V and 4.0V, and is rated for 160mJ single-pulse avalanche energy at TJ = 25°C - validated per Fig. 12a/12b test circuit with L = 0.12mH, RG = 25Ω, and IAS = 53A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 75V - maximum blocking voltage before avalanche onset; defines safe operating range in 42V automotive and 60V industrial bus applications |
| RDS(on) | 9.4mΩ max at VGS = 10V, TJ = 25°C - enables ≤0.53W conduction loss at 75A, critical for thermal budget in compact power modules |
| ID (continuous) | 75A at TC = 25°C - silicon-limited current rating; derates to 63A at TC = 100°C per Fig. 9 |
| Qg | 71–110nC - determines gate drive power requirement and switching speed; impacts ESW in hard-switched topologies |
| Coss(eff) | 440pF - effective output capacitance during VDS rise from 0 to 60V; directly affects zero-voltage switching feasibility |
| EAS | 160mJ - single-pulse avalanche energy limit; sets maximum stored inductive energy the device can absorb without failure |
| TJ(max) | 175°C - maximum junction temperature; enables operation in under-hood environments with minimal derating |
Pinout & Package
IRF2807ZS is housed in a surface-mount D2PAK (TO-263) package with three terminals: Drain (tab), Source (pins 1 & 2), and Gate (pin 3). The exposed drain pad provides low-inductance, high-current path and serves as primary thermal interface to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main high-side current path and thermal interface | Electrically connected to internal die drain; must be soldered to large copper pour for thermal management and low-inductance return |
| Source (Pins 1 & 2) | Reference node for gate drive and current sensing | Parallel pins reduce source inductance (LS = 7.5nH); critical for minimizing voltage overshoot during di/dt transients |
| Gate (Pin 3) | Control terminal for channel modulation | High-impedance input requiring <110nC charge; sensitive to ringing due to 4.5nH internal drain inductance (LD) |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 9.4mΩ max enables >97% efficiency in 12V–48V buck converters at 50A output |
| Repetitive avalanche rated | Validated for repeated unclamped inductive switching up to Tjmax, eliminating need for external snubbers in solenoid drivers |
| 175°C operating temperature | Supports direct mounting on engine-control-unit heatsinks without thermal throttling in ambient >125°C environments |
| Fast switching with low Qgd/Qg | 28–42nC Miller charge relative to 71–110nC total ensures clean turn-off even with moderate gate resistance |
| Low Coss(eff) | 440pF reduces capacitive turn-on loss and improves ZVS margin in resonant LLC topologies |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive DC-DC Converter (12V→5V) |
|---|---|
Use Scenario: High-speed switching of 12V fuel injectors with 2ms pulse width and 10A peak current in gasoline direct injection systems. IC Role / Device Role / Timing Role: Main power switch controlling injector coil energization/de-energization; handles 420A/µs di/dt during flyback. Use Value: 175°C rating prevents thermal shutdown during sustained idling; 160mJ EAS absorbs inductive kickback without clamping diodes. | Use Scenario: Primary-side switch in isolated flyback converter powering infotainment system logic rails. IC Role / Device Role / Timing Role: High-side PWM switch operating at 200kHz with 53A peak drain current and 60V VDS stress. Use Value: 9.4mΩ RDS(on) limits conduction loss to <0.3W; 440pF Coss(eff) minimizes dead-time loss and improves light-load efficiency. |
| Electric Power Steering (EPS) Motor Phase Leg | Commercial Vehicle HVAC Blower Controller |
Use Scenario: Half-bridge high-side switch driving 24V brushed DC motor in torque-assist steering actuator. IC Role / Device Role / Timing Role: Sustained 75A conduction during parking maneuvers; subjected to 100k-cycle thermal cycling between -40°C and 150°C. Use Value: 0.90°C/W RθJC enables direct heatsink mounting; 175°C TJ(max) avoids derating over full automotive temperature range. | Use Scenario: Low-side switch controlling 48V blower motor in heavy-duty truck HVAC system with PWM duty cycle up to 95%. IC Role / Device Role / Timing Role: Continuous conduction mode switch handling 63A RMS current at 100°C case temperature. Use Value: 63A rating at TC = 100°C (Fig. 9) ensures no current derating required; body diode VSD = 1.3V reduces freewheeling loss vs. external Schottky. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N7F7 | 75V VDSS, 2.2mΩ RDS(on), DFN8 5×6 package, 120A ID, no avalanche rating | Superior conduction efficiency but lacks repetitive avalanche capability; requires external protection in inductive loads | Select when board space is constrained and thermal design uses active cooling; avoid in solenoid or relay drivers without snubber |
| IXTH75N10L2 | 100V VDSS, 10.5mΩ RDS(on), TO-247 package, 175°C, 220mJ EAS | Higher voltage margin and stronger avalanche rating, but larger footprint and higher gate charge (135nC) | Select when system bus may exceed 75V transiently or when higher EAS margin is required for safety-critical actuators |
Compared with STL220N7F7 and IXTH75N10L2, IRF2807ZS offers optimal balance of low RDS(on), proven automotive avalanche ruggedness, and D2PAK thermal performance - making it preferred for cost-sensitive, thermally demanding engine bay applications where reliability trumps ultra-low RDS(on).
Availability
IRF2807ZS is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and commercial vehicle DC-DC converters requiring stable component supply across extended automotive lifecycles.
Supply support for IRF2807ZS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive microcontrollers, and sensor solutions, with core expertise in silicon and wide-bandgap device engineering.
The IRF2807ZS belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-temperature power switching in engine management, transmission control, and chassis systems.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRF2807ZS supports 63A continuous drain current at TC = 100°C, as specified in Figure 9 of the datasheet. This rating reflects thermal limitation of the D2PAK package rather than silicon capability, and assumes proper PCB copper area and thermal vias per AN-994 guidelines.
Does IRF2807ZS have a qualified AEC-Q101 rating?
Yes - IRF2807ZS is AEC-Q101 qualified for automotive applications, with test reports covering HTOL, temperature cycling, HTRB, and UHAST. The "ZS" suffix denotes the D2PAK variant included in Infineon's qualified automotive MOSFET portfolio per revision 2018-03.
Can IRF2807ZS replace IRF2807Z in existing TO-220AB designs?
No - IRF2807ZS (D2PAK) is not a drop-in replacement for IRF2807Z (TO-220AB) due to different footprint, thermal interface, and pinout. While electrical specs are identical, mechanical redesign is required for PCB layout, heatsinking, and assembly; thermal performance differs significantly (RθJA = 40°C/W PCB mount vs. 62°C/W for TO-220AB).
What is the recommended gate resistor for 200kHz PWM operation?
A 10Ω gate resistor is recommended for 200kHz operation to balance switching speed and gate drive stability. This value limits peak gate current to ~1.2A while suppressing oscillation caused by LD = 4.5nH and LS = 7.5nH, as verified in application note AN-1001 using the Fig. 18a test circuit.
IRF2807ZS Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 9.4mOhm @ 53A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3270 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 170W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF2807ZS FAQ
1.How can I place an order for IRF2807ZS through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF2807ZS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF2807ZS reliable?
The price and inventory of IRF2807ZS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2807ZS is usually 5 days.
3.What payment methods are accepted for IRF2807ZS?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2807ZS transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF2807ZS?
IRF2807ZS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF2807ZS order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF2807ZS?
For technical support, including IRF2807ZS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2807ZS requirements.
6.How does Aetrix verify that IRF2807ZS is sourced from the original manufacturer or authorized distributors?
All IRF2807ZS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2807ZS meets industry standards.
7.What is the process for return or replacement of IRF2807ZS?
All IRF2807ZS units undergo pre-shipment inspection (PSI). If there is an issue with IRF2807ZS, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF2807ZS part is unused and in its original packaging.
Return procedure for IRF2807ZS:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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