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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF2807ZSPBF

Name: IRF2807ZSPBF
Brand: Infineon Technologies
SKU: IRF2807ZSPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF2807ZSPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF2807ZSPBF.pdf

Description:: MOSFET N-CH 75V 75A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,020

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Product details

Overview

IRF2807ZSPBF from Infineon Technologies (formerly International Rectifier) is a 75V, 75A N-channel D2Pak (TO-263) HEXFET® Power MOSFET with 9.4mΩ R_DS(on) at V_GS = 10V, 175°C maximum junction temperature, and rated for repetitive avalanche energy up to 300mJ. It serves as a high-current, low-loss main switch in DC-DC converters, motor drives, and UPS systems.

For engineers reviewing the IRF2807ZSPBF datasheet, IRF2807ZSPBF pinout, IRF2807ZSPBF application, or IRF2807ZSPBF equivalent, key selection criteria include its 75A continuous drain current at T_C = 25°C, 0.90°C/W junction-to-case thermal resistance, fast switching (t_d(on) = 18ns, t_f = 45ns), body diode reverse recovery charge (Q_rr = 80–120nC), and D2Pak package compatibility with high-power PCB layouts.

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction loss while maintaining robust unclamped inductive switching capability. Its 175°C operating temperature and 300mJ single-pulse avalanche rating enable reliable operation under transient overloads without external snubbers.

The device features a low 7.5–9.4mΩ R_DS(on), 71–110nC total gate charge, and optimized capacitance profile (C_iss = 3270pF, C_oss = 420pF, C_rss = 240pF), supporting high-frequency hard-switching topologies up to several hundred kHz in synchronous rectification and half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75V - Maximum blocking voltage before avalanche; supports 48V bus systems with 50% safety margin.
R_DS(on)	7.5–9.4mΩ - Confirmed on-resistance range at V_GS = 10V and T_J = 25°C; determines I²R conduction loss in high-current paths.
I_D (continuous)	75A @ T_C = 25°C - Silicon-limited current handling; requires heatsinking for sustained operation above 63A at 100°C case temp.
E_AS	300mJ - Single-pulse avalanche energy rating; enables safe operation during inductive turn-off transients without clamping circuits.
Q_g	71–110nC - Total gate charge affecting driver power and switching speed; impacts gate drive loss and dV/dt control.
R_θJC	0.90°C/W - Junction-to-case thermal resistance; defines minimum heatsink requirement for 75A operation at 175°C max junction temp.
Q_rr	80–120nC - Body diode reverse recovery charge; directly influences commutation loss and EMI in synchronous buck or bridge legs.

Pinout & Package

D2Pak (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Three terminals: Drain (D), Source (S), Gate (G).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side current path output	Connected to PCB copper pour for thermal dissipation and high-current routing; electrically tied to exposed metal tab.
Source (S)	Reference node for gate drive and current sensing	Low-inductance return path; used for Kelvin source connection in precision current monitoring designs.
Gate (G)	Control input for channel conduction	High-impedance MOS control terminal requiring <20V absolute max rating; sensitive to ESD and ringing.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	9.4mΩ max at 10V drive enables <5W conduction loss at 75A, reducing heatsink size in 48V industrial power supplies.
175°C junction rating	Allows full-rated current delivery in high-ambient environments (e.g., enclosed motor drives) without derating below 100°C ambient.
Repetitive avalanche capability	Rated for repeated unclamped inductive switching (IAS = 53A, L = 0.12mH) without degradation-critical for relay replacement and solenoid drivers.
Fast switching with low Q_gd/Q_g	28–42nC Miller charge relative to 71–110nC total gate charge improves immunity to dv/dt-induced turn-on in half-bridge configurations.

Applications

DC-DC Converter Primary Switch

Brushless DC Motor Inverter Leg

Use Scenario: High-efficiency 48V-to-12V synchronous buck converter in telecom power shelves.

IC Role / Device Role / Timing Role: Main high-side switching element controlling energy transfer into output inductor; switched at 200kHz.

Use Value: 9.4mΩ R_DS(on) reduces conduction loss by >30% vs. comparable 12mΩ devices, improving full-load efficiency from 92% to 94.5%.

Use Scenario: Upper-leg switch in 3-phase BLDC inverter driving 5kW HVAC compressor.

IC Role / Device Role / Timing Role: High-current, high-dv/dt switching node in 6-step commutation; subjected to body-diode reverse recovery stress.

Use Value: 80–120nC Q_rr and soft-recovery characteristics minimize shoot-through risk and reduce EMI during phase transitions.

Uninterruptible Power Supply Output Stage

Industrial Solenoid/Relay Driver

Use Scenario: Bidirectional 75A output stage in online UPS converting battery DC to 230VAC via H-bridge inverter.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge topology handling continuous 75A RMS current with 200A peak surge.

Use Value: 0.90°C/W R_θJC allows direct mounting to cold plate, sustaining 75A at 175°C junction temp without forced air cooling.

Use Scenario: Solid-state replacement for 30A mechanical contactor controlling hydraulic valve bank in factory automation.

IC Role / Device Role / Timing Role: Unclamped inductive turn-off switch absorbing stored energy from 200mH solenoid coil.

Use Value: 300mJ E_AS rating permits >10⁶ cycles of 53A/0.12mH inductive switching without snubber or external protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	75V, 75A, R_DS(on) = 10.5mΩ, TO-220 package, no avalanche rating specified	Lacks documented repetitive avalanche capability; higher R_DS(on) increases conduction loss by ~17%	Preferred where cost sensitivity outweighs avalanche robustness and thermal performance is less constrained.
IXTP75N075	75V, 75A, R_DS(on) = 9.0mΩ, TO-220 package, 200mJ E_AS	Lower R_DS(on) but reduced avalanche energy (200mJ vs. 300mJ); TO-220 limits thermal performance vs. D2Pak	Better for lower-power designs needing marginal R_DS(on) improvement but unable to use surface-mount layout.

Compared with STP75NF75 and IXTP75N075, the IRF2807ZSPBF delivers superior thermal management via D2Pak packaging, highest avalanche ruggedness (300mJ), and lowest verified R_DS(on) among D2Pak 75V/75A MOSFETs-making it optimal for high-reliability, thermally constrained, or inductive-switching-critical applications.

Availability

IRF2807ZSPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor inverters, uninterruptible power supplies, and industrial solenoid drivers requiring stable component supply across multi-year production programs.

Supply support for IRF2807ZSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap power devices.

The IRF2807ZSPBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-current, high-ruggedness switching in industrial power conversion, motor control, and energy infrastructure applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF2807ZSPBF supports 63A continuous drain current at T_C = 100°C, as specified in Figure 9 of the datasheet. This value reflects package thermal limitation-not silicon limit-and assumes proper PCB copper area and thermal interface to maintain case temperature.

Does this MOSFET require a gate resistor for stability in hard-switching applications?

Yes. A gate resistor (typically 6.2–25Ω) is required to dampen ringing and control dv/dt during switching, especially in half-bridge configurations. The datasheet specifies t_d(on), t_r, t_d(off), and t_f test conditions using R_G = 6.2Ω, confirming its necessity for predictable timing and EMI control.

Can the body diode be used for synchronous rectification in a buck converter?

No-the internal body diode is not optimized for synchronous rectification. Its Q_rr (80–120nC) and forward voltage (1.3V) result in high commutation loss and poor efficiency compared to discrete Schottky or GaN-based synchronous FETs. External low-V_F diodes or dedicated sync-FETs are recommended.

Is the IRF2807ZSPBF RoHS-compliant and lead-free?

Yes. The "Z" suffix and "PbF" designation confirm compliance with RoHS Directive 2011/65/EU. The device uses lead-free terminations and meets JEDEC J-STD-020 moisture sensitivity level (MSL) 3 requirements when handled per AN-994 guidelines.

IRF2807ZSPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.4mOhm @ 53A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF2807ZSPBF FAQ

1.How can I place an order for IRF2807ZSPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF2807ZSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF2807ZSPBF reliable?

The price and inventory of IRF2807ZSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2807ZSPBF is usually 5 days.

3.What payment methods are accepted for IRF2807ZSPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2807ZSPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF2807ZSPBF?

IRF2807ZSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF2807ZSPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF2807ZSPBF?

For technical support, including IRF2807ZSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2807ZSPBF requirements.

6.How does Aetrix verify that IRF2807ZSPBF is sourced from the original manufacturer or authorized distributors?

All IRF2807ZSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2807ZSPBF meets industry standards.

7.What is the process for return or replacement of IRF2807ZSPBF?

All IRF2807ZSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF2807ZSPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF2807ZSPBF part is unused and in its original packaging.

Return procedure for IRF2807ZSPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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