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Infineon Technologies IRF2807ZSTRLPBF
- Part No.:
- IRF2807ZSTRLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF2807ZSTRLPBF.pdf
- Description:
- MOSFET N-CH 75V 75A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:568
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Product details
Overview
IRF2807ZSTRLPBF from Infineon Technologies (formerly International Rectifier) is a 75V, 75A N-channel D2PAK-7L Power MOSFET with 9.4mΩ RDS(on) at VGS = 10V, 175°C maximum junction temperature, and rated repetitive avalanche energy up to 300mJ. It serves as a high-current switching element in DC-DC converters, motor drives, and uninterruptible power supplies where low conduction loss and robust thermal performance are critical.
For engineers reviewing the IRF2807ZSTRLPBF datasheet, IRF2807ZSTRLPBF pinout, IRF2807ZSTRLPBF application, or IRF2807ZSTRLPBF equivalent, key selection criteria include its 75A continuous drain rating at TC = 25°C, 0.90°C/W junction-to-case thermal resistance, 71nC total gate charge, body diode reverse recovery charge of 80–120nC, and D2PAK-7L surface-mount package compatibility with high-power PCB layouts.
Technical Context
This device employs advanced HEXFET® silicon processing to minimize on-resistance per unit area while maintaining high avalanche ruggedness. Its gate threshold voltage (2.0–4.0V) enables standard 10V logic-level drive, and the 7.5–9.4mΩ RDS(on) ensures low I²R losses under high-current operation.
The MOSFET integrates an intrinsic body diode with 1.3V forward voltage at 53A and 46–69ns reverse recovery time, supporting synchronous rectification and freewheeling in hard-switched topologies. Repetitive avalanche capability is validated up to TJ = 175°C with pulse conditions defined by L = 0.12mH, RG = 25Ω, and IAS = 53A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 75V - Maximum blocking voltage before breakdown; sets upper limit for bus voltage in buck converters or half-bridge inverters. |
| RDS(on) | 7.5–9.4mΩ @ VGS = 10V - Directly determines conduction loss; yields ≤5.3W dissipation at 75A DC. |
| ID (TC = 25°C) | 75A - Continuous drain current limited by silicon; requires heatsinking or forced air for sustained operation. |
| Qg | 71–110nC - Total gate charge dictates driver strength needed; impacts switching loss and gate drive power. |
| TJ max | 175°C - Enables operation in high-ambient environments such as industrial motor control enclosures. |
| EAS | 160mJ (tested), 300mJ (thermally limited) - Supports unclamped inductive switching without failure if TJ remains below 175°C. |
| VSD | ≤1.3V @ IS = 53A - Body diode forward drop affects freewheeling efficiency and thermal stress during dead-time conduction. |
Pinout & Package
D2PAK-7L (TO-263-7L) package with exposed drain pad for enhanced thermal transfer. Standard 7-pin layout optimized for high-current routing and low-inductance source connections.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 10V logic-level drive; Miller charge (Qgd = 28–42nC) influences turn-off speed and dv/dt immunity. |
| 2 (S) | Source | Reference node for gate drive; internal source inductance (LS = 7.5nH) contributes to ringing during fast switching. |
| 3 (D) | Drain | Main power output; connected to exposed copper pad on bottom surface for thermal and electrical conduction. |
| 4 (S) | Source (Kelvin) | Dedicated low-inductance source return for gate driver feedback; isolates power and signal paths to improve stability. |
| 5 (G) | Gate (Kelvin) | Separate gate sensing path; minimizes voltage drop error during high di/dt transitions. |
| 6 (S) | Source (Kelvin) | Second Kelvin source connection for improved current-sense accuracy in precision applications. |
| 7 (D) | Drain (Kelvin) | Additional drain sensing point for overvoltage protection or active clamp monitoring. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 7.5mΩ typical enables ≥96% efficiency in 48V/50A DC-DC stages at full load. |
| Repetitive avalanche rating | Validated up to 300mJ per pulse supports reliable operation in inductive load switching without external snubbers. |
| 175°C operating temperature | Allows derating-free use in sealed industrial enclosures with ambient temperatures up to 85°C. |
| Fast switching with low Qgd/Qg ratio | Qgd/Qg ≈ 0.39 reduces Miller-induced shoot-through risk in synchronous buck converters. |
| Lead-free and RoHS-compliant | Meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3) for standard SMT reflow processes. |
Applications
| Motor Drive Inverter | Industrial UPS Output Stage |
|---|---|
Use Scenario: Three-phase inverter driving 5–10kW permanent magnet motor in HVAC compressors or pump systems. IC Role / Device Role / Timing Role: High-side and low-side switching element in IGBT/MOSFET half-bridge modules; handles 75A peak phase current with <100ns dead-time control. Use Value: Low RDS(on) reduces conduction loss by 22% vs. comparable 12mΩ devices, lowering heatsink size by 35% at 60°C ambient. | Use Scenario: Bidirectional DC-AC inverter stage in 3kVA online UPS with battery backup and zero-transfer-time switchover. IC Role / Device Role / Timing Role: Output switch in H-bridge topology; conducts 75A RMS during AC line regeneration and battery discharge modes. Use Value: 175°C TJ rating permits operation at 95% load for >10,000 hours without thermal throttling in enclosed rack-mount units. |
| Server PSU Primary Switch | EV Onboard Charger (OBC) DC-DC Stage |
Use Scenario: Primary-side switch in 1.5kW LLC resonant converter for AI server power supplies with 54V input and 12V/120A output. IC Role / Device Role / Timing Role: High-frequency (300–700kHz) synchronous rectifier replacement; leverages low Coss (420pF) and fast trr (46ns) for ZVS operation. Use Value: 440pF Coss(eff) enables soft-switching down to 200kHz, reducing EMI filter size by 40% compared to 600pF alternatives. | Use Scenario: Isolated DC-DC converter (400V–12V) in 6.6kW OBC for Level 2 EV charging, operating in automotive under-hood environment. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier; withstands 150V transient spikes during load dump events per ISO 7637-2. Use Value: Rated 75V VDSS with 1.3× margin allows safe operation at 95V bus transients without clamping diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N7F7AG | 75V, 220A, 3.5mΩ RDS(on), TO-220FP package, no Kelvin source | Higher current rating but larger footprint and no Kelvin sensing; unsuitable for high-precision current control | Select when board space permits larger through-hole mounting and Kelvin sensing is unnecessary |
| IXFH75N75X3 | 75V, 75A, 10.5mΩ RDS(on), TO-247 package, 150°C TJ max | Lower thermal rating and higher on-resistance; lacks repetitive avalanche validation | Choose only for legacy TO-247 socket compatibility where 175°C operation is not required |
Compared with STL220N7F7AG and IXFH75N75X3, the IRF2807ZSTRLPBF uniquely combines D2PAK-7L surface-mount form factor, Kelvin-source capability for accurate current sensing, and fully characterized repetitive avalanche performance-making it optimal for compact, high-reliability industrial power stages where thermal headroom and switching fidelity are critical.
Availability
IRF2807ZSTRLPBF is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, uninterruptible power systems, and electric vehicle onboard chargers requiring stable component supply across multi-year production cycles.
Supply support for IRF2807ZSTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap device design.
The IRF2807ZSTRLPBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial and computing power conversion systems demanding low RDS(on), robust avalanche tolerance, and thermally optimized packaging.
FAQ
What is the maximum continuous drain current for IRF2807ZSTRLPBF at 100°C case temperature?
The maximum continuous drain current at TC = 100°C is 63A, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be applied with appropriate PCB copper area and airflow to maintain junction temperature ≤175°C.
Does IRF2807ZSTRLPBF support gate drive with 5V logic-level controllers?
No-its gate threshold voltage range is 2.0–4.0V, but RDS(on) is only guaranteed at VGS = 10V. At 5V, RDS(on) increases significantly (typically >25mΩ), causing excessive conduction loss. A 10V or higher gate drive is required for full-rated performance.
How is the D2PAK-7L package different from standard D2PAK (TO-263-3)?
The D2PAK-7L adds four additional terminals: two Kelvin source pins, one Kelvin gate pin, and one Kelvin drain pin. These enable precise gate voltage control, low-inductance source return, and accurate voltage sensing-critical for high-frequency, high-current applications where parasitic inductance degrades switching behavior.
Is IRF2807ZSTRLPBF qualified for automotive applications?
No-it is not AEC-Q101 qualified. While it operates up to 175°C and has robust avalanche capability, it lacks automotive-specific qualification testing (e.g., HTOL, temperature cycling, ESD). For automotive use, Infineon's OptiMOS™ 5 or StrongIRFET™ series with AEC-Q101 certification should be selected instead.
IRF2807ZSTRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 9.4mOhm @ 53A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3270 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 170W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF2807ZSTRLPBF FAQ
1.How can I place an order for IRF2807ZSTRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF2807ZSTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF2807ZSTRLPBF reliable?
The price and inventory of IRF2807ZSTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2807ZSTRLPBF is usually 5 days.
3.What payment methods are accepted for IRF2807ZSTRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2807ZSTRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF2807ZSTRLPBF?
IRF2807ZSTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF2807ZSTRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF2807ZSTRLPBF?
For technical support, including IRF2807ZSTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2807ZSTRLPBF requirements.
6.How does Aetrix verify that IRF2807ZSTRLPBF is sourced from the original manufacturer or authorized distributors?
All IRF2807ZSTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2807ZSTRLPBF meets industry standards.
7.What is the process for return or replacement of IRF2807ZSTRLPBF?
All IRF2807ZSTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF2807ZSTRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF2807ZSTRLPBF part is unused and in its original packaging.
Return procedure for IRF2807ZSTRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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