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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF2807ZSTRRPBF

Name: IRF2807ZSTRRPBF
Brand: Infineon Technologies
SKU: IRF2807ZSTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF2807ZSTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF2807ZSTRRPBF.pdf

Description:: MOSFET N-CH 75V 75A D2PAK

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Product details

Overview

IRF2807ZSTRRPBF from Infineon Technologies (formerly International Rectifier) is a 75V, 75A N-channel enhancement-mode Power MOSFET in D2Pak (TO-263) package with 9.4mΩ R_DS(on) at V_GS = 10V, 175°C maximum junction temperature, and rated for repetitive avalanche energy up to 300mJ - used in high-current DC-DC converters, motor drives, and uninterruptible power supplies.

For engineers reviewing the IRF2807ZSTRRPBF datasheet, IRF2807ZSTRRPBF pinout, IRF2807ZSTRRPBF application, or IRF2807ZSTRRPBF equivalent, key selection criteria include its low on-resistance, fast switching (t_r = 79ns), body diode recovery performance (Q_rr = 80–120nC), and thermal robustness under pulsed load conditions.

Technical Context

This device employs advanced HEXFET® silicon process technology to minimize conduction losses while maintaining high dv/dt immunity and rugged unclamped inductive switching capability. Its gate charge profile (Q_g = 71–110nC) supports efficient gate driver design for hard-switched topologies.

The integrated body diode exhibits low forward voltage (V_SD ≤ 1.3V at 53A) and controlled reverse recovery (t_rr = 46–69ns, Q_rr = 80–120nC), enabling reliable operation in synchronous rectification and freewheeling applications without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75V - Maximum drain-source blocking voltage; defines safe operating range in 48V bus systems and industrial SMPS.
R_DS(on)	7.5–9.4mΩ @ V_GS = 10V - Enables <1W conduction loss at 75A, critical for high-efficiency power stages.
I_D	75A @ T_C = 25°C - Continuous current rating limited by silicon; derates to 63A at 100°C case temperature.
E_AS	300mJ - Single-pulse avalanche energy; allows safe operation during inductive turn-off transients without snubbers.
Q_g	71–110nC - Total gate charge determines required gate driver peak current and switching loss trade-off.
t_r/t_f	79ns/45ns - Fast rise/fall times support >200kHz switching in hard-switched converters.
V_GS(th)	2.0–4.0V - Gate threshold ensures clean turn-on with standard 5V or 3.3V logic-level drivers when biased above 4.0V.

Pinout & Package

IRF2807ZSTRRPBF is housed in a surface-mount D2Pak (TO-263) package with exposed drain pad for thermal enhancement. The three terminals are arranged in standard G-S-D order (left-to-right when viewing from top with marking side up).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives gate drive signal; requires ≥10V for full enhancement; Miller charge (Q_gd = 28–42nC) dominates switching transitions.
S (Source)	Reference node for gate drive and current return	Connected to power ground; internal source inductance (L_S = 7.5nH) affects di/dt-induced voltage spikes during turn-off.
D (Drain)	Main power output terminal	Exposed copper pad on bottom surface; carries full load current and dissipates heat into PCB copper area or heatsink.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	9.4mΩ max at 10V drive enables <0.5W conduction loss at 50A, reducing thermal stress in compact layouts.
175°C maximum junction temperature	Supports sustained operation in sealed enclosures or high-ambient environments without derating beyond datasheet curves.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to I_AS = 53A and E_AR = 200mJ, eliminating need for external clamping in many motor control designs.
Fast body diode recovery	Q_rr = 80–120nC and t_rr = 46–69ns reduce switching losses and EMI in synchronous buck and half-bridge configurations.

Applications

Motor Drive Inverter Stage

High-Efficiency DC-DC Converter

Use Scenario: 3-phase BLDC motor inverter with 48V input and 10–20kW output.

IC Role / Device Role / Timing Role: High-side and low-side switching element in each leg; handles 75A peak phase current with <100ns dead-time requirements.

Use Value: Low R_DS(on) and fast switching minimize conduction + switching losses, enabling >97% efficiency at full load.

Use Scenario: Isolated 48V-to-12V telecom DC-DC converter using active clamp forward topology.

IC Role / Device Role / Timing Role: Primary-side main switch; operates at 250kHz with 50% duty cycle and 100V transient spikes.

Use Value: 75V V_DSS margin and 300mJ E_AS ensure reliability during voltage overshoot events without snubber circuits.

Uninterruptible Power Supply Output Stage

Industrial AC-DC Rectifier Module

Use Scenario: Online UPS delivering 3kVA output with battery backup and double-conversion architecture.

IC Role / Device Role / Timing Role: Inverter bridge MOSFET handling 75A RMS output current; subjected to frequent load transients and short-circuit events.

Use Value: Repetitive avalanche rating allows safe turn-off during output faults, improving system fault tolerance without additional protection circuitry.

Use Scenario: 3kW industrial AC-DC front-end with PFC + LLC stage; MOSFET used in LLC resonant tank switch position.

IC Role / Device Role / Timing Role: Resonant switch operating in ZVS mode; conducts 53A average current with high di/dt during zero-voltage transitions.

Use Value: Low Q_gd/Q_gs ratio and tight V_GS(th) distribution enable consistent ZVS boundary across temperature and production lot.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	R_DS(on) = 10.5mΩ @ 10V; V_DSS = 75V; Q_g = 120nC; TO-220 package	Higher gate charge increases driver loss; through-hole mounting limits high-frequency layout density	Preferred where cost sensitivity outweighs switching frequency or thermal constraints
IXTP75N075T	R_DS(on) = 7.5mΩ @ 10V; V_DSS = 75V; Q_g = 85nC; TO-220 package; no avalanche rating	Lacks repetitive avalanche specification; lower R_DS(on) improves conduction loss but requires external protection	Selected for high-efficiency linear-regulated supplies where inductive stress is absent

Compared with STP75NF75 and IXTP75N075T, IRF2807ZSTRRPBF offers superior thermal interface via D2Pak package, verified repetitive avalanche capability, and balanced gate charge-making it optimal for high-reliability, high-current switching in space-constrained industrial inverters.

Availability

IRF2807ZSTRRPBF is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and high-efficiency DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF2807ZSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.

This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-current, high-reliability switching in industrial motor control, UPS, and telecom power systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF2807ZSTRRPBF supports 63A continuous drain current at T_C = 100°C, as specified in Figure 9 of the datasheet. This value reflects thermal derating due to reduced heat transfer at elevated case temperatures and assumes proper PCB copper area and thermal interface to maintain junction temperature below 175°C.

Does this MOSFET require a gate resistor for stability?

Yes - a gate resistor (typically 5–25Ω) is recommended to dampen ringing caused by gate loop inductance and prevent spurious turn-on from Miller feedback. The device's Q_gd = 28–42nC and C_iss = 3270pF make it sensitive to fast dv/dt edges; a 10Ω resistor balances switching speed and oscillation suppression in most 48V applications.

Can IRF2807ZSTRRPBF be used in synchronous rectification?

Yes - its low V_SD (≤1.3V) and controlled Q_rr (80–120nC) allow use as a synchronous rectifier in DC-DC converters up to 200kHz. However, precise gate timing relative to the main switch is essential to avoid shoot-through; typical implementation uses dedicated synchronous rectifier controllers or adaptive gate drive with dead-time control.

Is the D2Pak package lead-free and RoHS compliant?

Yes - the "PbF" suffix in IRF2807ZSTRRPBF confirms lead-free termination and full compliance with RoHS Directive 2011/65/EU. The device uses matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level MSL3, requiring bake before reflow if exposed to ambient for >168 hours.

IRF2807ZSTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.4mOhm @ 53A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF2807ZSTRRPBF FAQ

1.How can I place an order for IRF2807ZSTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF2807ZSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF2807ZSTRRPBF reliable?

The price and inventory of IRF2807ZSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2807ZSTRRPBF is usually 5 days.

3.What payment methods are accepted for IRF2807ZSTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2807ZSTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF2807ZSTRRPBF?

IRF2807ZSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF2807ZSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF2807ZSTRRPBF?

For technical support, including IRF2807ZSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2807ZSTRRPBF requirements.

6.How does Aetrix verify that IRF2807ZSTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF2807ZSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2807ZSTRRPBF meets industry standards.

7.What is the process for return or replacement of IRF2807ZSTRRPBF?

All IRF2807ZSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF2807ZSTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF2807ZSTRRPBF part is unused and in its original packaging.

Return procedure for IRF2807ZSTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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