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Infineon Technologies IRF2903ZPBF
- Part No.:
- IRF2903ZPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRF2903ZPBF.pdf
- Description:
- MOSFET N-CH 30V 75A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:6,571
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Product details
Overview
IRF2903ZPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, rated for 30 V VDSS, 2.4 mΩ RDS(on) at VGS = 10 V, and 75 A continuous drain current at TC = 25°C. It features 175°C junction temperature rating, fast switching (td(on) = 24 ns, tf = 37 ns), and tested repetitive avalanche capability up to IAS = 75 A - designed for high-efficiency DC-DC converters and motor drive half-bridges.
For engineers reviewing the IRF2903ZPBF datasheet, IRF2903ZPBF pinout, IRF2903ZPBF application, or IRF2903ZPBF equivalent, key selection criteria include low RDS(on) at 10 V gate drive, thermal robustness under pulsed load conditions, body diode recovery performance (trr = 34–51 ns), and SOA compliance for unclamped inductive switching.
Technical Context
This MOSFET employs advanced planar silicon processing to minimize conduction loss while maintaining ruggedness against transient overloads. Its gate charge profile (Qg = 160–240 nC, Qgd = 58 nC) supports efficient hard-switching operation with moderate gate resistance (RG = 3.2 Ω typical test condition).
The integrated body diode exhibits VSD = 1.3 V at IS = 75 A and controlled reverse recovery (Qrr = 29–44 nC), enabling reliable synchronous rectification and freewheeling in buck and H-bridge topologies without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 24 V bus systems. |
| RDS(on) | 2.4 mΩ max @ VGS = 10 V - Enables ≤1.8 W conduction loss at 75 A, critical for thermally constrained PCB layouts. |
| ID (cont) | 75 A @ TC = 25°C - Sustains high-current loads when mounted on heatsink; derates to 26 A at TC = 100°C. |
| EAS | 290 mJ (tested) - Quantifies single-pulse avalanche energy handling; supports robustness in inductive turn-off events. |
| tr/tf | 100 ns / 37 ns - Fast edge rates reduce switching transition time, lowering dynamic losses in 100–500 kHz SMPS designs. |
| Qgd | 58 nC - Miller charge determines gate drive strength requirement and influences dv/dt immunity during switching. |
| RθJC | 0.51 °C/W - Junction-to-case thermal resistance enables accurate heatsink sizing for continuous 75 A operation. |
Pinout & Package
IRF2903ZPBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected). The package provides mechanical stability for high-current solder joints and direct thermal path to heatsink via case mounting surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control electrode | Receives 10 V logic-level gate drive; threshold voltage 2.0–4.0 V ensures compatibility with standard microcontroller outputs. |
| Drain (D) | High-side current sink | Internally connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits. |
| Source (S) | Power return node | Serves as common reference for gate drive and load current; internal source inductance (LS = 7.5 nH) affects high-di/dt ringing. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 2.4 mΩ max at 10 V gate drive - reduces I²R losses by >30% vs. legacy 30 V MOSFETs in same package. |
| 175°C junction rating | Enables operation in sealed enclosures or high-ambient environments without derating beyond datasheet curves. |
| Repetitive avalanche rated | Tested to 75 A IAS with full thermal margin - eliminates need for external clamping in motor phase-leg snubbers. |
| Fast body diode recovery | trr = 34–51 ns with Qrr = 29–44 nC - minimizes cross-conduction loss in synchronous rectifiers. |
Applications
| DC-DC Buck Converter | Brushless DC Motor Driver |
|---|---|
Use Scenario: High-current 24 V input to 5/12 V output conversion in telecom power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch with 75 A continuous conduction capability. Use Value: 2.4 mΩ RDS(on) limits conduction loss to <1.8 W at full load, reducing heatsink size by 40% vs. 4.5 mΩ alternatives. | Use Scenario: Half-bridge leg in 3-phase BLDC inverter for industrial fans and pumps. IC Role / Device Role / Timing Role: High-current switching element with avalanche-rated turn-off for inductive back-EMF clamping. Use Value: 290 mJ EAS and 175°C TJ rating allow reliable operation under 100 µs inductive spikes without derating. |
| Automotive Body Control Module | Industrial LED Driver |
Use Scenario: Load switching for solenoids, relays, and HVAC actuators in 12/24 V vehicle systems. IC Role / Device Role / Timing Role: High-side or low-side power switch with integrated avalanche protection. Use Value: Repetitive avalanche rating eliminates need for external TVS, simplifying BOM and passing ISO 7637-2 pulse 5a testing. | Use Scenario: Constant-current switching regulator for high-brightness LED arrays in street lighting. IC Role / Device Role / Timing Role: Primary switching transistor in buck-based constant-current topology. Use Value: Fast tf = 37 ns and low Qgd enable clean PWM dimming at 1–20 kHz without audible noise or EMI spikes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF30 | RDS(on) = 3.0 mΩ @ 10 V; lower ID = 60 A; no specified EAS rating | Limited avalanche robustness requires external clamping in inductive loads | Prefer for cost-sensitive, non-avalanche-critical 24 V switching where thermal margin exceeds 15°C |
| IXTH75N30P | RDS(on) = 2.8 mΩ; higher VDSS = 300 V; TO-247 package; Qg = 190 nC | Over-specified voltage rating increases gate drive energy and layout parasitics | Only select if future-proofing for 48 V systems or requiring TO-247 mechanical robustness |
Compared with STP75NF30 and IXTH75N30P, IRF2903ZPBF delivers optimal balance of ultra-low on-resistance, verified avalanche endurance, and TO-220AB thermal-mechanical fit - making it the preferred choice for space-constrained, high-reliability 24–30 V industrial switching where both efficiency and fault tolerance are mandatory.
Availability
IRF2903ZPBF is available at Aetrix Electronics and suitable for DC-DC buck converters, brushless DC motor drivers, automotive body control modules, and industrial LED drivers requiring stable component supply and long-term production continuity.
Supply support for IRF2903ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The HEXFET® Power MOSFET product line targets high-efficiency power conversion systems, emphasizing low conduction loss, rugged transient handling, and thermal reliability in demanding industrial and transportation applications.
FAQ
Is IRF2903ZPBF lead-free and RoHS compliant?
Yes, IRF2903ZPBF is lead-free and fully RoHS 2011/65/EU compliant. The "PbF" suffix explicitly denotes lead-free termination, and the device meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30°C/60% RH.
What is the maximum allowable gate-to-source voltage for IRF2903ZPBF?
The absolute maximum VGS is ±20 V. Operation above +20 V risks irreversible gate oxide breakdown, while sustained negative gate voltage below −20 V may cause threshold shift. Recommended drive range is 0 V to +12 V for logic-level compatibility and long-term reliability.
Can IRF2903ZPBF be used in parallel configurations?
Yes, IRF2903ZPBF supports paralleling due to its positive RDS(on) temperature coefficient - ensuring current sharing improves with temperature rise. Use matched gate resistors (≤1 Ω difference) and symmetrical PCB layout to minimize loop inductance imbalance between devices.
Does IRF2903ZPBF require a gate resistor for switching?
Yes, a gate resistor is required to control dV/dt and prevent oscillation. Typical value is 3.2 Ω (per datasheet test condition); values between 2.2 Ω and 10 Ω balance switching speed, EMI, and gate driver stress. Lower values increase peak gate current and risk ringing; higher values slow transitions and raise dynamic losses.
IRF2903ZPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.4mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 240 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6320 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 290W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRF2903ZPBF FAQ
1.How can I place an order for IRF2903ZPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF2903ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF2903ZPBF reliable?
The price and inventory of IRF2903ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2903ZPBF is usually 5 days.
3.What payment methods are accepted for IRF2903ZPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2903ZPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF2903ZPBF?
IRF2903ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF2903ZPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF2903ZPBF?
For technical support, including IRF2903ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2903ZPBF requirements.
6.How does Aetrix verify that IRF2903ZPBF is sourced from the original manufacturer or authorized distributors?
All IRF2903ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2903ZPBF meets industry standards.
7.What is the process for return or replacement of IRF2903ZPBF?
All IRF2903ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF2903ZPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF2903ZPBF part is unused and in its original packaging.
Return procedure for IRF2903ZPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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