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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF2903ZSTRLP

Name: IRF2903ZSTRLP
Brand: Infineon Technologies
SKU: IRF2903ZSTRLP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF2903ZSTRLP

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF2903ZSTRLP.pdf

Description:: MOSFET N-CH 30V 75A D2PAK

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Product details

Overview

IRF2903ZSTRLP from Infineon Technologies (formerly International Rectifier) is an N-channel automotive-grade HEXFET® Power MOSFET in D2PAK (TO-263) package, rated for 30 V V_DSS, 75 A continuous drain current at T_C = 25°C, and ultra-low 2.4 mΩ R_DS(on) at V_GS = 10 V. It features 175°C maximum junction temperature, fast switching (t_r = 100 ns), and tested repetitive avalanche capability up to T_jmax, making it suitable for high-current DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the IRF2903ZSTRLP datasheet, IRF2903ZSTRLP pinout, IRF2903ZSTRLP application, or IRF2903ZSTRLP equivalent, key selection criteria include its 2.4 mΩ on-resistance at 10 V gate drive, 160 nC total gate charge, 175°C thermal rating, and validated unclamped inductive switching performance per JEDEC JESD47.

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction loss while maintaining robustness under transient overloads. Its design integrates a low-inductance D2PAK package with optimized die layout to reduce L_D (4.5 nH) and L_S (7.5 nH), enabling clean switching waveforms in high-di/dt automotive power stages.

The device supports gate drive voltages from 2.0 V to 20 V, with a typical threshold voltage of 3.0 V and forward transconductance of 120 S. Its body diode exhibits V_SD = 1.3 V at 75 A and t_rr = 34–51 ns, supporting synchronous rectification and freewheeling in buck and half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage before avalanche; defines safe operation in 12 V/24 V automotive bus systems.
R_DS(on) @ V_GS = 10 V	2.4 mΩ max - Enables <1.8 W conduction loss at 75 A, critical for thermally constrained under-hood modules.
I_D @ T_C = 25°C	75 A - Continuous silicon-limited current; supports high-power solenoid drivers and EPS motor phases.
Q_g	160–240 nC - Determines gate driver strength requirement; ~3.2 Ω external R_G needed for 100 ns rise time.
T_J max	175°C - Allows operation in high-ambient environments (e.g., near exhaust manifolds or turbochargers).
E_AS (tested)	1020 mJ - Validated single-pulse avalanche energy; enables reliable operation during load dump or inductive kick events.
C_iss	6320 pF - Input capacitance impacts gate drive loop stability and EMI filtering requirements in switching regulators.

Pinout & Package

IRF2903ZSTRLP uses the surface-mount D2PAK (TO-263) package with exposed drain pad for thermal enhancement. The package measures 10.16 × 11.18 mm and is RoHS-compliant with lead-free matte tin plating.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to copper tab; must be soldered to PCB thermal pad for R_θJC = 0.51°C/W performance.
Source	Reference node for gate drive and current return	Low-inductance source bond wires minimize V_GS disturbance during fast switching; used for Kelvin sensing in precision current monitoring.
Gate	Control terminal for channel modulation	High-impedance input requiring <200 nA leakage; sensitive to ESD-requires gate resistor and TVS protection in automotive harness interfaces.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	2.4 mΩ at 10 V gate drive reduces I²R losses by >30% vs. legacy 30 V MOSFETs in 48 V mild-hybrid DC-DC stages.
Repetitive avalanche rating	Tested per JEDEC JESD24-1; supports ≥10⁴ unclamped inductive cycles at I_AS = 75 A without degradation.
175°C junction rating	Enables full-rated current delivery at case temperatures up to 150°C-critical for compact power modules in ADAS ECUs.
Fast body diode recovery	t_rr = 34 ns (typ.) and Q_rr = 29 nC enable efficient synchronous rectification in high-frequency (>200 kHz) buck converters.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Electric Power Steering (EPS) Phase Inverter

Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 60 A and pulse widths down to 0.5 ms.

IC Role / Device Role / Timing Role: Main power switch controlling injector coil energization; operates in hard-switched PWM mode at 1–10 kHz.

Use Value: Low R_DS(on) minimizes coil heating during dwell time; 175°C rating ensures reliability during extended idling with under-hood ambient >125°C.

Use Scenario: Three-phase inverter stage driving 24 V brushless DC motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: Low-side switch in 60 kHz PWM-driven H-bridge; handles bidirectional current via integrated body diode during regeneration.

Use Value: Fast t_r/t_f and low Q_gd reduce switching losses; validated avalanche withstand prevents failure during motor phase reversal transients.

48 V Mild-Hybrid DC-DC Converter

Automotive HVAC Blower Motor Controller

Use Scenario: Primary-side synchronous rectifier in 48 V-to-12 V bi-directional buck-boost converter for energy recovery.

IC Role / Device Role / Timing Role: High-current, high-frequency (250 kHz) power switch operating in continuous conduction mode.

Use Value: C_oss = 1980 pF and low Q_gd/Q_gs ratio improve zero-voltage switching margin; R_DS(on) stability over temperature ensures consistent efficiency across -40°C to +150°C.

Use Scenario: PWM-controlled blower motor driver in climate control systems with variable speed demand up to 30 A.

IC Role / Device Role / Timing Role: Single-ended high-side or low-side switch in linear/PWM hybrid control architecture.

Use Value: Repetitive avalanche capability absorbs back-EMF spikes during sudden motor stop; 1020 mJ E_AS exceeds ISO 7637-2 Pulse 5a requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	30 V, 220 A (T_C = 25°C), R_DS(on) = 1.2 mΩ, DFN 8×8 package	Higher current rating but lower thermal mass; requires multi-layer PCB copper pour for equivalent R_θJA.	Preferred for space-constrained, high-efficiency 48 V systems where board-level thermal design allows DFN mounting.
ON Semiconductor NTMFS5C673NL	30 V, 120 A, R_DS(on) = 1.8 mΩ, SO-8FL package, 150°C T_J max	Limited to 150°C junction temperature; no published repetitive avalanche rating.	Valid for non-safety-critical 12 V loads where ambient temperature stays below 105°C and avalanche stress is absent.

Compared with STL220N3LLH6 and NTMFS5C673NL, IRF2903ZSTRLP offers superior thermal robustness (175°C vs. 150°C), verified repetitive avalanche endurance, and proven field reliability in engine bay deployments-making it the preferred choice for ASIL-B functional safety domains.

Availability

IRF2903ZSTRLP is available at Aetrix Electronics and suitable for engine control units, electric power steering inverters, 48 V mild-hybrid DC-DC converters, and HVAC blower motor controllers requiring stable component supply across automotive production lifecycles.

Supply support for IRF2903ZSTRLP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification to AEC-Q101 standards.

This device belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in harsh-temperature engine compartment and chassis applications.

FAQ

What is the maximum allowable gate-source voltage for IRF2903ZSTRLP?

The absolute maximum V_GS is ±20 V per the datasheet. Operation beyond ±15 V risks permanent gate oxide damage, especially at elevated temperatures. For robust automotive designs, gate drive should be clamped to +12 V / –5 V using Zener diodes or dedicated gate driver ICs with rail-to-rail output compliance.

Does IRF2903ZSTRLP require a gate resistor, and what value is recommended?

Yes-a series gate resistor is mandatory to dampen ringing and limit peak gate current. With Q_g = 160–240 nC and typical gate driver rise time target of 100 ns, a 3.2 Ω resistor (±10%) is recommended when using a 12 V gate drive and 100 mA peak driver capability, per Figure 6 and switching test circuit in Figure 18a.

Can IRF2903ZSTRLP be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (0.021 V/°C) enables inherent current sharing. Successful parallel operation requires matched layout symmetry, identical gate drive paths, and Kelvin source connections to avoid oscillation. Derate total current by 15% versus sum of individual ratings per AEC-Q101 parallel switching guidelines.

Is the body diode suitable for continuous freewheeling in high-frequency PWM applications?

Yes-the body diode is rated for 75 A continuous source current and exhibits t_rr = 34–51 ns with Q_rr = 29–44 nC. For 200+ kHz operation, ensure gate drive timing avoids cross-conduction, and use snubbers if dv/dt exceeds 50 V/ns during diode commutation.

IRF2903ZSTRLP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 240 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6320 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 290W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF2903ZSTRLP FAQ

1.How can I place an order for IRF2903ZSTRLP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF2903ZSTRLP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF2903ZSTRLP reliable?

The price and inventory of IRF2903ZSTRLP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2903ZSTRLP is usually 5 days.

3.What payment methods are accepted for IRF2903ZSTRLP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2903ZSTRLP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF2903ZSTRLP?

IRF2903ZSTRLP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF2903ZSTRLP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF2903ZSTRLP?

For technical support, including IRF2903ZSTRLP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2903ZSTRLP requirements.

6.How does Aetrix verify that IRF2903ZSTRLP is sourced from the original manufacturer or authorized distributors?

All IRF2903ZSTRLP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2903ZSTRLP meets industry standards.

7.What is the process for return or replacement of IRF2903ZSTRLP?

All IRF2903ZSTRLP units undergo pre-shipment inspection (PSI). If there is an issue with IRF2903ZSTRLP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF2903ZSTRLP part is unused and in its original packaging.

Return procedure for IRF2903ZSTRLP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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