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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF2907ZS-7PPBF

Name: IRF2907ZS-7PPBF
Brand: Infineon Technologies
SKU: IRF2907ZS-7PPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF2907ZS-7PPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Datasheet:: IRF2907ZS-7PPBF.pdf

Description:: MOSFET N-CH 75V 160A D2PAK

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Product details

Overview

IRF2907ZS-7PPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET designed for high-current, low-voltage switching in power conversion stages. It delivers 75 V V_DSS, 3.8 mΩ R_DS(on) at V_GS = 10 V, and 160 A continuous drain current at T_C = 25°C, with 175°C maximum junction temperature - enabling robust operation in server OR-ing and telecom DC/DC modules.

For engineers reviewing the IRF2907ZS-7PPBF datasheet, IRF2907ZS-7PPBF pinout, IRF2907ZS-7PPBF application, or IRF2907ZS-7PPBF equivalent, key selection criteria include its ultra-low on-resistance, fast switching (t_r = 90 ns, t_f = 44 ns), repetitive avalanche rating (E_AS = 160 mJ), thermal resistance R_θJC = 0.50°C/W, and D²PAK-7L package compatibility with high-power PCB layouts.

Technical Context

This MOSFET employs advanced silicon processing and copper-clip packaging to minimize parasitic inductance (L_D = 4.5 nH, L_S = 7.5 nH) and achieve industry-leading R_DS(on) × Q_g figure-of-merit. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures stable turn-on under wide supply conditions, while the body diode supports synchronous rectification with t_rr = 35–53 ns and Q_rr = 40–60 nC.

The device is characterized for unclamped inductive switching up to I_AS = 110 A and E_AS = 160 mJ (tested), with thermal performance validated across T_J = −55°C to +175°C. Repetitive avalanche operation is permitted within limits defined by transient thermal impedance Z_thJC and duty cycle constraints per Figure 11 and AN-1005.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Withstands up to 75 V drain-source blocking voltage before avalanche onset.
R_DS(on)	3.8 mΩ max @ V_GS = 10 V, T_J = 25°C - Enables <1 W conduction loss at 110 A, critical for high-efficiency 12 V input systems.
I_D (cont)	160 A @ T_C = 25°C - Supports high-current OR-ing and motor drive phases without derating at board-level heatsinking.
Q_g	260 nC max - Determines gate driver power requirement; enables fast switching with moderate gate resistance (R_G = 25 Ω typical test condition).
t_r/t_f	90 ns / 44 ns - Reduces switching losses in hard-switched topologies operating up to ~500 kHz.
E_AS	160 mJ - Specifies single-pulse avalanche energy capability; allows safe operation during inductive fault transients.
R_θJC	0.50 °C/W - Enables direct thermal coupling to heatsink; supports >150 W power dissipation with ≤75°C temperature rise above case.

Pinout & Package

IRF2907ZS-7PPBF uses a surface-mount D²PAK-7L (TO-263-7) package with exposed drain pad for enhanced thermal and electrical performance. The 7-pin configuration integrates three parallel source terminals and dual gate connections to reduce package inductance and improve current sharing.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3 (Source)	Main source connection (parallel)	Low-inductance return path; reduces voltage overshoot during high di/dt switching.
4, 5 (Gate)	Parallel gate inputs	Enables distributed gate drive to minimize gate loop inductance and suppress oscillation.
6, 7 (Drain)	Drain connection (exposed pad)	Primary thermal path to PCB heatsink; also carries main current path to output rail.
Exposed Pad	Drain (internally connected)	Provides dominant thermal interface; must be soldered to ≥1"² copper area for rated R_θJA = 40°C/W.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	3.8 mΩ max enables <0.7 W conduction loss at 110 A, reducing thermal load in dense power modules.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to T_Jmax, supporting robust protection in motor drive fault conditions.
175°C operating junction temperature	Allows full-rated current delivery in high-ambient environments (e.g., sealed telecom chassis) without derating.
Fast body diode recovery	t_rr = 35–53 ns and Q_rr = 40–60 nC support efficient synchronous rectification in buck converters.
D²PAK-7L copper-clip construction	Reduces internal L_D (4.5 nH) and L_S (7.5 nH), minimizing voltage spikes and improving EMI behavior.

Applications

Server OR-ing Circuit

Telecom DC/DC Converter

Use Scenario: Parallel 12 V input rails in redundant server power supplies, where MOSFETs replace Schottky diodes to reduce forward drop and heat generation.

IC Role / Device Role / Timing Role: High-side OR-ing switch controlling power path selection and reverse-current blocking.

Use Value: 3.8 mΩ R_DS(on) cuts conduction loss by >70% vs. 0.4 V Schottky, enabling >98% efficiency at 100 A and eliminating forced-air cooling.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V to 12 V telecom DC/DC modules with tight thermal envelopes.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing secondary-side diodes in forward or LLC topologies.

Use Value: Fast t_rr (35 ns) and low Q_rr (40 nC) minimize dead-time losses and voltage ringing during commutation.

Industrial Motor Drive

High-Current Load Switch

Use Scenario: Half-bridge leg in 24 V BLDC motor inverters for factory automation, requiring high peak current and fault tolerance.

IC Role / Device Role / Timing Role: High-current switching element in PWM-driven H-bridge phase legs.

Use Value: 160 A continuous rating and 700 A pulsed current (I_DM) support 3× overload torque without thermal shutdown.

Use Scenario: Hot-swap controller in enterprise storage backplanes, where controlled inrush and short-circuit protection are mandatory.

IC Role / Device Role / Timing Role: Main power FET in electronic circuit breaker with integrated current sensing and fast turn-off.

Use Value: Repetitive avalanche rating (E_AR = 300 mJ) sustains multiple short-circuit events without degradation, extending field life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N7F7AG	R_DS(on) = 2.2 mΩ @ 10 V, but V_DSS = 75 V same; Q_g = 220 nC; DFN8 5×6 mm package.	Lower R_DS(on) improves conduction loss, but smaller package limits thermal mass and peak current handling.	Select when board space is constrained and thermal design uses active cooling; avoid in passively cooled OR-ing.
IXFH160N075T2	R_DS(on) = 4.2 mΩ @ 10 V; V_DSS = 75 V; TO-247-3L package; E_AS = 220 mJ.	Larger through-hole package offers higher surge current margin (I_DM = 800 A) but requires manual assembly and larger footprint.	Select for prototyping or low-volume industrial drives where mechanical robustness and repairability outweigh SMT density.

Compared with STL220N7F7AG and IXFH160N075T2, IRF2907ZS-7PPBF uniquely balances ultra-low on-resistance, D²PAK-7L thermal performance, and validated repetitive avalanche behavior - making it optimal for high-reliability, high-density 12–48 V power systems where both efficiency and fault resilience are non-negotiable.

Availability

IRF2907ZS-7PPBF is available at Aetrix Electronics and suitable for server OR-ing circuits, telecom DC/DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from original manufacturer stock.

Supply support for IRF2907ZS-7PPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap device development.

This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-current, low-voltage DC power distribution and conversion - emphasizing thermal robustness, avalanche reliability, and system-level efficiency in mission-critical infrastructure.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF2907ZS-7PPBF supports 120 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value reflects silicon-limited conduction capacity under sustained thermal conditions and assumes proper PCB copper area and airflow per AN-994 mounting guidelines.

Does this MOSFET include an integrated body diode, and what are its key parameters?

Yes, it features a monolithic N-channel MOSFET body diode with V_SD = 1.3 V max at I_S = 110 A, t_rr = 35–53 ns, and Q_rr = 40–60 nC. These values are measured under standardized conditions (T_J = 25°C, I_S = 110 A, di/dt = 100 A/µs) and enable reliable synchronous rectification in buck and half-bridge topologies.

Can IRF2907ZS-7PPBF be used in avalanche mode, and how is it tested?

Yes - it is 100% production-tested for single-pulse avalanche energy (E_AS = 160 mJ) using the unclamped inductive test circuit in Figure 12a. Repetitive avalanche is permitted within thermal limits defined by Z_thJC and duty cycle, per AN-1005 guidance and Figures 15–16.

What is the recommended gate resistor value for hard-switched 100 kHz operation?

A gate resistor of 5–10 Ω is recommended for 100 kHz hard-switching to balance switching speed (t_r/t_f) and gate driver stress. At 10 Ω, total gate charge (260 nC) yields ~2.6 µs effective turn-on time, limiting dV/dt-induced shoot-through risk while maintaining <1% switching loss penalty versus lower R_G.

IRF2907ZS-7PPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 110A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 260 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7580 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK (7-Lead)

IRF2907ZS-7PPBF FAQ

1.How can I place an order for IRF2907ZS-7PPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF2907ZS-7PPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF2907ZS-7PPBF reliable?

The price and inventory of IRF2907ZS-7PPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2907ZS-7PPBF is usually 5 days.

3.What payment methods are accepted for IRF2907ZS-7PPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2907ZS-7PPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF2907ZS-7PPBF?

IRF2907ZS-7PPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF2907ZS-7PPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF2907ZS-7PPBF?

For technical support, including IRF2907ZS-7PPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2907ZS-7PPBF requirements.

6.How does Aetrix verify that IRF2907ZS-7PPBF is sourced from the original manufacturer or authorized distributors?

All IRF2907ZS-7PPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2907ZS-7PPBF meets industry standards.

7.What is the process for return or replacement of IRF2907ZS-7PPBF?

All IRF2907ZS-7PPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF2907ZS-7PPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF2907ZS-7PPBF part is unused and in its original packaging.

Return procedure for IRF2907ZS-7PPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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