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Infineon Technologies IRF3007PBF
- Part No.:
- IRF3007PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRF3007PBF.pdf
- Description:
- MOSFET N-CH 75V 75A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:4,770
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Product details
Overview
IRF3007PBF from Infineon Technologies is a 75V, 75A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, featuring 12.6 mΩ RDS(on) at VGS = 10 V, 175°C maximum junction temperature, and 280 mJ single-pulse avalanche energy - deployed in industrial motor drives, DC-DC converters, and uninterruptible power supplies.
For engineers reviewing the IRF3007PBF datasheet, IRF3007PBF pinout, IRF3007PBF application, or IRF3007PBF equivalent, key selection criteria include its ultra-low on-resistance, fast switching (tr = 80 ns, tf = 49 ns), repetitive avalanche capability, thermal resistance (RθJC = 0.74°C/W), and lead-free TO-220AB mechanical compatibility.
Technical Context
This MOSFET employs advanced silicon processing to minimize conduction loss while maintaining robustness under transient overvoltage conditions. Its 175°C rated junction enables high-temperature operation without derating in constrained thermal environments, and its 320 A pulsed drain current supports short-duration peak loads in hard-switched topologies.
The device integrates an intrinsic body diode with 1.3 V forward voltage at 48 A and 85–130 ns reverse recovery time, enabling synchronous rectification and freewheeling in buck and half-bridge configurations. Gate charge parameters (Qg = 89–130 nC, Qgd = 30–45 nC) are optimized for efficient gate driver sizing in 100 kHz–500 kHz switching applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 75 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 48 V systems. |
| RDS(on) | 12.6 mΩ @ VGS = 10 V, ID = 48 A - Directly determines conduction loss (Pcond ≈ I² × RDS(on)) in continuous-current stages. |
| ID (continuous) | 75 A @ TC = 25°C - Package-limited current rating; defines heatsink sizing baseline for forced-air or chassis-mount cooling. |
| EAS | 280 mJ - Single-pulse unclamped inductive switching energy handling; enables reliable operation in relay/snubberless designs. |
| RθJC | 0.74 °C/W - Junction-to-case thermal resistance; used with heatsink RθCS + RθSA to calculate max allowable power at target TJ. |
| Qg | 89–130 nC - Total gate charge required to fully switch; determines gate driver peak current (IG = Qg/ton) and drive loss. |
| tr/tf | 80 ns / 49 ns - Rise/fall times at VDD = 38 V, ID = 48 A, RG = 4.6 Ω; constrains minimum achievable switching period and EMI profile. |
Pinout & Package
IRF3007PBF is housed in a through-hole TO-220AB package with electrically isolated tab (drain-connected), standard mounting hole, and 6 mm lead spacing. The package supports 1.1 N·m screw torque and 300°C soldering for 10 seconds at 1.6 mm from case.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main high-side current path and thermal interface | Electrically connected to metal tab; requires insulating washer if mounted to grounded heatsink. |
| Source | Reference node for gate control and current return path | Low-inductance connection point for sense resistor placement and gate driver ground reference. |
| Gate | Control terminal for channel modulation | High-impedance input requiring <130 nC charge; sensitive to ESD and ringing; needs local RC snubbing in high-dV/dt layouts. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 12.6 mΩ enables ≤0.45 W conduction loss at 30 A, reducing heatsink volume by >40% vs. legacy 20 mΩ devices. |
| 175°C junction rating | Permits full-rated current operation up to ambient 125°C with appropriate thermal design - critical for sealed industrial enclosures. |
| Repetitive avalanche capability | Validated per Fig. 12a/12b/15/16; allows safe operation under inductive turn-off transients without external clamping in motor H-bridges. |
| Lead-free and RoHS-compliant | Meets JEDEC J-STD-020 reflow profile; eliminates Pb-based solder compatibility concerns in mixed-technology PCB assembly. |
Applications
| Industrial Motor Drive | DC-DC Converter Primary Switch |
|---|---|
Use Scenario: High-efficiency 3-phase inverter driving 1–5 kW AC induction motors in HVAC and pump systems. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid bridge; conducts during PWM low-state with 20 kHz carrier frequency. Use Value: 12.6 mΩ RDS(on) reduces I²R losses by 37% vs. IRF3205, improving system efficiency from 92.1% to 93.8% at full load. |
Use Scenario: 48 V input, 12 V output synchronous buck converter in telecom power shelf with 300 kHz switching. IC Role / Device Role / Timing Role: High-side main switch; handles 75 A peak current during duty cycle transitions with <80 ns rise time. Use Value: 89 nC Qg enables gate drive with <2 A peak current using low-cost 5 V logic-level drivers, minimizing drive-stage BOM cost. |
| Uninterruptible Power Supply (UPS) | Power Factor Correction (PFC) Boost Switch |
Use Scenario: Online double-conversion UPS delivering clean 230 VAC output with battery backup for data center servers. IC Role / Device Role / Timing Role: Inverter stage switch operating in hard-switched full-bridge topology with 10–20 kHz fundamental frequency. Use Value: 280 mJ EAS withstands line surges and load dump events without failure, eliminating need for external TVS clamping on DC bus. |
Use Scenario: Active PFC front-end in 2 kW server PSU, operating in continuous conduction mode (CCM) at 65 kHz. IC Role / Device Role / Timing Role: Boost switch controlling inductor current slew rate; subjected to 75 V DC link and 100 A peak currents. Use Value: 0.74°C/W RθJC allows direct mounting to aluminum chassis, achieving 105°C max TJ with no active cooling - reducing fan count and acoustic noise. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF75 | RDS(on) = 11.5 mΩ (lower), but EAS = 190 mJ (32% lower); TO-220FP package with non-isolated tab. | Lacks repetitive avalanche rating validation; unsuitable for unclamped inductive loads without external protection. | Prefer where conduction loss dominates and thermal margin exists; avoid in motor drive freewheeling paths. |
| IXTH75N10L2 | RDS(on) = 13.5 mΩ (slightly higher), but features 100% avalanche-tested 450 mJ EAS and 200 A IDM. | Designed for high-reliability aerospace/military use; higher gate charge (150 nC) increases driver complexity. | Choose when field reliability under fault stress is paramount; accept 12% higher gate drive loss for 61% more avalanche margin. |
Compared with STP75NF75 and IXTH75N10L2, IRF3007PBF delivers optimal balance of low RDS(on), validated repetitive avalanche performance, and industry-standard TO-220AB footprint - making it the preferred choice for cost-sensitive industrial motor drives requiring both efficiency and ruggedness.
Availability
IRF3007PBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.
Supply support for IRF3007PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The IRF3007PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-current, high-efficiency switching in industrial and infrastructure power conversion systems where thermal robustness and avalanche tolerance are mandatory.
FAQ
Is IRF3007PBF pin-compatible with IRF3205?
No. While both use TO-220AB packages and share Drain–Source–Gate pin order, IRF3007PBF has higher current rating (75 A vs. 110 A pulsed), lower RDS(on) (12.6 mΩ vs. 22 mΩ), and different gate charge (89–130 nC vs. 71 nC). Direct substitution requires verification of thermal and drive circuit margins.
What is the maximum recommended gate drive voltage for IRF3007PBF?
The absolute maximum VGS is ±20 V, but the device is characterized and optimized for 10 V drive. Operation above 15 V yields diminishing RDS(on) improvement while increasing gate oxide stress and risk of overvoltage failure during transients.
Can IRF3007PBF be used in synchronous rectification topologies?
Yes - its integrated body diode has VSD = 1.3 V at 48 A and trr = 85–130 ns, enabling use as freewheeling diode in low-frequency (<100 kHz) synchronous buck converters. However, external Schottky diodes remain preferred above 200 kHz due to lower Qrr and faster recovery.
Does IRF3007PBF require a heatsink in all applications?
Yes - even at 30 A continuous current, junction temperature exceeds 150°C without heatsinking due to RθJC = 0.74°C/W and RθJA = 62°C/W. A minimum 15 cm² aluminum heatsink with thermal grease is required for ambient temperatures above 40°C in enclosed environments.
IRF3007PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 12.6mOhm @ 48A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 130 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3270 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRF3007PBF FAQ
1.How can I place an order for IRF3007PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF3007PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF3007PBF reliable?
The price and inventory of IRF3007PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3007PBF is usually 5 days.
3.What payment methods are accepted for IRF3007PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3007PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF3007PBF?
IRF3007PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF3007PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF3007PBF?
For technical support, including IRF3007PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3007PBF requirements.
6.How does Aetrix verify that IRF3007PBF is sourced from the original manufacturer or authorized distributors?
All IRF3007PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3007PBF meets industry standards.
7.What is the process for return or replacement of IRF3007PBF?
All IRF3007PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3007PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF3007PBF part is unused and in its original packaging.
Return procedure for IRF3007PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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