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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3205LPBF

Name: IRF3205LPBF
Brand: Infineon Technologies
SKU: IRF3205LPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3205LPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF3205LPBF.pdf

Description:: MOSFET N-CH 55V 110A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:4,059

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Product details

Overview

IRF3205LPBF from Infineon Technologies (formerly International Rectifier) is a lead-free, through-hole D2Pak-packaged N-channel enhancement-mode power MOSFET designed for high-current DC-DC conversion, motor drive, and power switching applications. It delivers 55V V_(BR)DSS, 8.0 mΩ R_DS(on) at V_GS = 10 V, 110 A continuous drain current at T_C = 25°C, and full avalanche rating up to 1050 mJ.

For engineers reviewing the IRF3205LPBF datasheet, IRF3205LPBF pinout, IRF3205LPBF application, or IRF3205LPBF equivalent, key selection criteria include its low on-resistance in a through-hole package, 175°C junction temperature rating, fast switching performance (t_d(on) = 14 ns, t_f = 65 ns), and rugged body diode with 69 ns reverse recovery time.

Technical Context

This MOSFET employs Advanced HEXFET® process technology to achieve ultra-low conduction losses while maintaining robust avalanche capability and dynamic dv/dt immunity (5.0 V/ns). Its internal structure integrates low-inductance source and drain leads (L_S, L_D) optimized for high-frequency hard-switching topologies.

The device operates across –55°C to +175°C junction temperature range and features gate threshold voltage of 2.0–4.0 V, forward transconductance of 44 S, and total gate charge of 146 nC - enabling efficient gate drive design in high-power synchronous rectifiers and H-bridge drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	55 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in buck converters and half-bridge inverters.
R_DS(on)	8.0 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 110 A; critical for thermal management in high-current PCB-mounted designs.
I_D (continuous)	110 A @ T_C = 25°C - Supports high-output industrial power supplies without forced air cooling when mounted on 1"² FR-4 PCB.
E_AS	1050 mJ - Single-pulse avalanche energy rating ensures reliable operation during inductive load turn-off transients in motor control.
t_r/t_f	101 ns / 65 ns - Fast switching transitions reduce switching losses in PWM frequencies up to 100 kHz.
Q_g	146 nC - Determines gate driver current requirement (e.g., ≥1.5 A peak for 100 ns turn-on); impacts driver IC selection and layout parasitics.

Pinout & Package

The IRF3205LPBF uses the TO-262 (D2Pak variant) through-hole package: three-terminal, insulated tab, vertical mounting orientation, with 1.1 N·m maximum mounting torque. Thermal resistance is R_θJC = 0.75°C/W and R_θJA = 40°C/W (PCB mounted, steady-state).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically connected to metal tab; requires isolation from heatsink unless referenced to system ground.
Source	Reference node for gate drive and current sensing	Low-inductance internal connection; used for Kelvin-source sensing in precision current monitoring.
Gate	Control terminal for channel conduction	High-impedance input requiring RC snubber or gate resistor (e.g., 4.5 Ω) to damp oscillation during fast switching.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	8.0 mΩ enables <1 W conduction loss at 110 A, reducing heatsink size in space-constrained industrial power modules.
Full avalanche rated	1050 mJ single-pulse energy withstand allows safe operation under inductive switching stress without external clamping.
175°C max junction temperature	Supports operation in sealed enclosures or high-ambient environments (e.g., automotive engine bays, industrial motor drives).
Fast body diode	69 ns trr and 143 nC Q_rr minimize reverse recovery losses in synchronous rectification and freewheeling paths.

Applications

DC-DC Converters

Motor Drive Half-Bridge

Use Scenario: High-current step-down converter in telecom power shelf delivering 48 V → 12 V at >100 A output.

IC Role / Device Role / Timing Role: Primary synchronous rectifier switch handling continuous high-side conduction and fast commutation.

Use Value: 8.0 mΩ R_DS(on) reduces conduction loss by >30% vs. comparable 10 mΩ devices, improving efficiency from 92% to 93.5% at full load.

Use Scenario: 24 V brushed DC motor controller in automated warehouse conveyor system.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology, conducting bidirectional current up to 110 A during acceleration/deceleration.

Use Value: 1050 mJ E_AS rating prevents failure during rapid direction reversal with inductive back-EMF spikes exceeding 80 V.

Uninterruptible Power Supplies

Industrial Battery Switching

Use Scenario: Transfer switch in line-interactive UPS managing battery-to-inverter path during grid outage.

IC Role / Device Role / Timing Role: High-current solid-state relay replacing mechanical contactors for silent, wear-free switching.

Use Value: 175°C TJ rating ensures reliability during sustained 100 A load currents under elevated ambient temperatures (>60°C) inside UPS cabinets.

Use Scenario: 48 V lithium-ion battery disconnect switch in energy storage system (ESS) rack.

IC Role / Device Role / Timing Role: Main isolation FET controlled by battery management system (BMS) for overcurrent and short-circuit protection.

Use Value: 5.0 V/ns dv/dt immunity prevents false turn-on during high-slew-rate fault events, ensuring fail-safe shutdown without gate driver complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N55F6	55 V V_(BR)DSS, 7.5 mΩ R_DS(on), TO-220 package, lower Q_g (110 nC)	Higher thermal resistance (R_θJA = 62°C/W) limits continuous current to 75 A on same PCB area	Preferable where gate drive power is constrained but heatsinking is limited; not drop-in due to different footprint and thermal path.
IXTH110N10L2	100 V V_(BR)DSS, 9.2 mΩ R_DS(on), TO-247 package, higher E_AS (1300 mJ)	Wider voltage margin supports 72 V battery systems but increases cost and board space	Selected when future-proofing for higher bus voltages or where enhanced avalanche robustness justifies larger package and price premium.

Compared with STP110N55F6 and IXTH110N10L2, the IRF3205LPBF offers optimal balance of low R_DS(on), proven D2Pak thermal performance, and cost-effective through-hole assembly - making it preferred for high-volume 48–55 V industrial power stages where PCB real estate and thermal interface design are tightly controlled.

Availability

IRF3205LPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drive half-bridges, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF3205LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in power discrete innovation following its acquisition of International Rectifier in 2015.

The HEXFET® product line was originally developed by International Rectifier to deliver ultra-low R_DS(on) power MOSFETs for high-efficiency switching applications in industrial motor drives, renewable energy inverters, and server power supplies.

FAQ

Is IRF3205LPBF RoHS-compliant and lead-free?

Yes. The "PbF" suffix confirms compliance with RoHS Directive 2011/65/EU and JEDEC J-STD-609A standard for lead-free terminations. The device uses matte tin plating over copper leads and meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (unlimited floor life at ≤30°C/60% RH).

What is the maximum safe operating current at 100°C case temperature?

At T_C = 100°C, the continuous drain current is derated to 80 A per absolute maximum ratings table. This reflects thermal limitation of the TO-262 package, not silicon capability - actual current must be validated against PCB copper area, heatsink interface, and ambient airflow.

Can IRF3205LPBF replace IRF3205L in existing designs?

Yes. IRF3205LPBF is the lead-free, RoHS-compliant version of IRF3205L with identical electrical specifications, pinout, and thermal characteristics. No layout or firmware changes are required; only requalification of soldering profile for Pb-free process (peak 260°C, 10 s).

Does the body diode support synchronous rectification in boost converters?

No. While the body diode has fast recovery (trr = 69 ns), its V_SD = 1.3 V at 62 A and Q_rr = 143 nC make it inefficient for high-frequency synchronous rectification. Dedicated low-V_F Schottky or MOSFET-based synchronous rectifiers are recommended for >100 kHz boost topologies.

IRF3205LPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 62A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 146 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3247 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF3205LPBF FAQ

1.How can I place an order for IRF3205LPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3205LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3205LPBF reliable?

The price and inventory of IRF3205LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3205LPBF is usually 5 days.

3.What payment methods are accepted for IRF3205LPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3205LPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3205LPBF?

IRF3205LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3205LPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3205LPBF?

For technical support, including IRF3205LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3205LPBF requirements.

6.How does Aetrix verify that IRF3205LPBF is sourced from the original manufacturer or authorized distributors?

All IRF3205LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3205LPBF meets industry standards.

7.What is the process for return or replacement of IRF3205LPBF?

All IRF3205LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3205LPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3205LPBF part is unused and in its original packaging.

Return procedure for IRF3205LPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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