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Infineon Technologies IRF3205SPBF
- Part No.:
- IRF3205SPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF3205SPBF.pdf
- Description:
- MOSFET N-CH 55V 110A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,048
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Product details
Overview
IRF3205SPBF from Infineon Technologies (formerly International Rectifier) is a D2Pak-packaged N-channel enhancement-mode power MOSFET designed for high-current DC-DC conversion, motor drive, and switching power supply output stages. It delivers 55V V(BR)DSS, 8.0mΩ RDS(on) at VGS = 10V and ID = 62A, 110A continuous drain current at TC = 25°C, and full avalanche rating up to 1050mJ - enabling robust operation in hard-switched industrial inverters.
For engineers reviewing the IRF3205SPBF datasheet, IRF3205SPBF pinout, IRF3205SPBF application, or IRF3205SPBF equivalent, key selection criteria include its low RDS(on) under high-current conduction, fast switching (td(on) = 14ns, tf = 65ns), 175°C junction temperature rating, and D2Pak thermal performance (RθJC = 0.75°C/W) for surface-mount high-power designs.
Technical Context
This HEXFET® device uses advanced silicon processing to minimize on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its gate charge profile (Qg = 146nC, Qgd = 54nC) supports efficient gate driving in synchronous buck converters operating above 100kHz.
The integrated body diode exhibits trr = 69–104ns and Qrr = 143–215nC at IF = 62A, making it suitable for freewheeling paths where reverse recovery behavior directly impacts efficiency and EMI in non-isolated topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 55V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 48V systems. |
| RDS(on) | 8.0mΩ @ VGS = 10V, ID = 62A - Enables <0.5W conduction loss at 80A, critical for thermal management in compact heatsinks. |
| ID (TC = 25°C) | 110A - Continuous drain current rating under ideal case cooling; package-limited to 75A in typical PCB mount. |
| EAS | 1050mJ - Single-pulse avalanche energy; allows safe operation during inductive turn-off transients without external snubbers. |
| Qg / Qgd | 146nC / 54nC - Gate-to-drain (Miller) charge dominates switching losses; requires ≥2A peak gate driver for <100ns transition times. |
| RθJC | 0.75°C/W - Junction-to-case thermal resistance; enables 200W dissipation with ≤150°C ΔT to heatsink in D2Pak mounting. |
Pinout & Package
D2Pak (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Three terminals: Drain (tab + pin 2), Source (pin 1), Gate (pin 3). Mounting requires soldering the drain tab to a large copper pour for optimal heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab + Pin 2) | Main high-side current path | Electrically and thermally connected to PCB copper; must be routed with minimum trace inductance for switching stability. |
| Source (Pin 1) | Reference node for gate drive and current sensing | Low-inductance return path required; layout must avoid ground bounce affecting gate threshold margin. |
| Gate (Pin 3) | Control electrode for channel modulation | High-impedance input requiring localized decoupling; Miller capacitance (Crss = 211pF) demands careful gate resistor selection. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 8.0mΩ enables <0.6W conduction loss at 85A, reducing heatsink size by ≥30% vs. comparable 10mΩ devices. |
| Full avalanche rating | 1050mJ single-pulse energy tolerance eliminates need for external clamping in motor drive flyback paths. |
| 175°C maximum junction temperature | Supports operation in sealed enclosures or high-ambient environments without derating below 100°C ambient. |
| D2Pak thermal performance | 0.75°C/W RθJC allows 200W power dissipation with 150°C junction-to-heatsink delta, exceeding TO-220 limits by 2.5×. |
Applications
| Brushless DC Motor Drive | 48V DC-DC Synchronous Buck Converter |
|---|---|
Use Scenario: Half-bridge leg in 500W BLDC inverter for HVAC blowers. IC Role / Device Role / Timing Role: High-side switching element handling 80A peak phase current with 20kHz PWM. Use Value: 8.0mΩ RDS(on) reduces conduction loss to 5.1W per FET, enabling passive cooling instead of forced-air fans. | Use Scenario: Output switch in isolated 48V→12V telecom power supply. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier with 100kHz switching frequency and 50% duty cycle. Use Value: Low Qgd (54nC) minimizes Miller-induced shoot-through risk, supporting reliable zero-voltage switching (ZVS) implementation. |
| Industrial UPS Inverter Stage | Automotive Starter Solenoid Replacement |
Use Scenario: Full-bridge H-bridge delivering 3kVA AC output from 48V battery bank. IC Role / Device Role / Timing Role: Low-side switch conducting 110A continuous with 10ms overload pulses. Use Value: 110A ID rating and 1050mJ EAS withstand repeated load dump events without failure. | Use Scenario: Solid-state replacement for mechanical starter solenoid in 24V commercial vehicles. IC Role / Device Role / Timing Role: High-current latching switch controlling 90A cranking current for 500ms. Use Value: Avalanche-rated structure absorbs inductive kickback from starter motor coil without external TVS. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP110N55F6 | 55V V(BR)DSS, 7.5mΩ RDS(on), D²PAK package, lower Qg (110nC) | Better switching efficiency but reduced avalanche energy (EAS = 620mJ) | Preferred for high-frequency SMPS where avalanche stress is minimal. |
| IXTH110N10L2 | 100V V(BR)DSS, 9.2mΩ RDS(on), TO-247 package, higher ID (110A) | Higher voltage margin but larger footprint and worse thermal resistance (RθJC = 0.85°C/W) | Chosen when system bus may exceed 55V or through-hole mounting is required. |
Compared with STP110N55F6 and IXTH110N10L2, IRF3205SPBF offers the best balance of low conduction loss, proven avalanche ruggedness, and D2Pak thermal performance for 48V industrial switching - making it optimal where reliability under transient overloads outweighs marginal switching speed gains.
Availability
IRF3205SPBF is available at Aetrix Electronics and suitable for brushless motor drives, 48V DC-DC converters, and industrial UPS inverters requiring stable component supply across multi-year production cycles.
Supply support for IRF3205SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support the HEXFET® portfolio with full documentation and long-term product assurance.
The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion in industrial motor control, renewable energy inverters, and automotive subsystems - emphasizing ruggedness, thermal performance, and manufacturability in surface-mount formats.
FAQ
Is IRF3205SPBF lead-free and RoHS-compliant?
Yes, IRF3205SPBF is lead-free and RoHS-compliant, as indicated by the "PbF" suffix and confirmed in Infineon's official product change notices. The device uses matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) for standard reflow profiles.
What is the maximum recommended gate drive voltage for IRF3205SPBF?
The absolute maximum gate-to-source voltage is ±20V, but the device is characterized and optimized for 10V gate drive. Driving above 15V provides diminishing RDS(on) improvement while increasing gate oxide stress and risk of spurious turn-on due to dv/dt coupling.
Can IRF3205SPBF replace IRF3205LPBF in a design?
Yes - both share identical electrical specifications and die, differing only in package: IRF3205SPBF uses surface-mount D2Pak (TO-263), while IRF3205LPBF uses through-hole TO-262. Layout and thermal interface must be redesigned accordingly; D2Pak offers superior thermal resistance but requires PCB copper area for the drain tab.
Does IRF3205SPBF require a gate resistor, and what value is typical?
Yes, a gate resistor is required to control switching speed and suppress oscillation. For 100kHz operation with a 2A gate driver, 4.7Ω is typical - balancing turn-on time (~25ns), EMI reduction, and Miller-induced shoot-through prevention given its 54nC Qgd.
IRF3205SPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 62A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 146 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3247 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF3205SPBF FAQ
1.How can I place an order for IRF3205SPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF3205SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF3205SPBF reliable?
The price and inventory of IRF3205SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3205SPBF is usually 5 days.
3.What payment methods are accepted for IRF3205SPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3205SPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF3205SPBF?
IRF3205SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF3205SPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF3205SPBF?
For technical support, including IRF3205SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3205SPBF requirements.
6.How does Aetrix verify that IRF3205SPBF is sourced from the original manufacturer or authorized distributors?
All IRF3205SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3205SPBF meets industry standards.
7.What is the process for return or replacement of IRF3205SPBF?
All IRF3205SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3205SPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF3205SPBF part is unused and in its original packaging.
Return procedure for IRF3205SPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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