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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3205STRRPBF

Name: IRF3205STRRPBF
Brand: Infineon Technologies
SKU: IRF3205STRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3205STRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3205STRRPBF.pdf

Description:: MOSFET N-CH 55V 110A D2PAK

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Product details

Overview

IRF3205STRRPBF from Infineon Technologies (formerly International Rectifier) is a D2PAK-packaged N-channel enhancement-mode power MOSFET rated for 55 V V_DS, 8.0 mΩ R_DS(on) at V_GS = 10 V, and 110 A continuous drain current at T_C = 25°C. It features fully avalanche-rated ruggedness, 175°C maximum junction temperature, and fast switching with 14 ns turn-on delay and 65 ns fall time - deployed in high-current DC-DC converters, motor drives, and synchronous rectifiers.

For engineers reviewing the IRF3205STRRPBF datasheet, IRF3205STRRPBF pinout, IRF3205STRRPBF application, or IRF3205STRRPBF equivalent, key selection criteria include its low on-resistance per silicon area, 2.0 W surface-mount thermal dissipation capability, body diode reverse recovery charge (Q_rr = 143–215 nC), and gate charge profile (Q_g = 146 nC) critical for PWM efficiency and gate driver sizing.

Technical Context

This HEXFET® device uses advanced planar processing to minimize R_DS(on) while maintaining robust avalanche energy rating (E_AS = 1050–264 mJ). Its internal structure includes low-inductance source/drain leads (L_S/L_D) optimized for high di/dt operation up to 207 A/µs.

The D2PAK package enables direct PCB heat spreading with R_θJC = 0.75°C/W and R_θJA = 40°C/W (1"² FR-4), supporting high-current switching without through-hole mounting - unlike the TO-262 variant (IRF3205LPbF) intended for low-profile assemblies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in buck converters and H-bridge drivers.
R_DS(on)	8.0 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 110 A, critical for thermal management in high-current power stages.
I_D (cont)	110 A @ T_C = 25°C - Sustained current capability when case is actively cooled; derates to 80 A at 100°C case temperature.
Q_g	146 nC - Total gate charge determines required gate driver peak current and switching loss trade-off in 100–500 kHz applications.
t_f	65 ns - Fast fall time reduces overlap loss during hard-switching, improving efficiency in SMPS and inverters.
E_AS	1050 mJ - Single-pulse avalanche energy rating allows safe operation under inductive load turn-off transients without external snubbers.
trr / Q_rr	69–104 ns / 143–215 nC - Body diode recovery behavior directly impacts shoot-through risk and losses in synchronous rectification.

Pinout & Package

The IRF3205STRRPBF is housed in a surface-mount D2PAK (TO-263) package with three terminals: Drain (tab), Source (pin 2), and Gate (pin 1). The exposed drain pad provides primary thermal path to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to package backside	Must be soldered to large copper pour for thermal conduction; serves as high-side switch output node in half-bridge topologies.
Source (Pin 2)	Reference node for gate drive and current sensing	Low-inductance connection essential for accurate current monitoring and stable gate control in high-di/dt circuits.
Gate (Pin 1)	Control input for channel conduction	Requires 10 V minimum for full enhancement; sensitive to ESD and ringing due to 146 nC total charge and Miller capacitance.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	8.0 mΩ enables <1 W conduction loss at 110 A, reducing heatsink requirements in high-power DC-DC stages.
Full avalanche rating	1050 mJ single-pulse energy tolerance eliminates need for external clamping in inductive load switching.
Fast switching performance	14 ns t_d(on), 65 ns t_f, and 211 pF C_rss support efficient operation up to 500 kHz in resonant and hard-switched topologies.
High-temperature operation	Rated for continuous operation at 175°C junction temperature, enabling compact designs in sealed or high-ambient environments.
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020 moisture sensitivity level 3, suitable for standard reflow assembly without special handling.

Applications

Motor Drive Inverter Stage

DC-DC Synchronous Rectifier

Use Scenario: High-current BLDC motor phase leg in industrial automation systems operating at 48 V bus voltage.

IC Role / Device Role / Timing Role: Low-side switching element in 3-phase inverter bridge; conducts 80–110 A RMS with 20 kHz PWM.

Use Value: 8.0 mΩ R_DS(on) limits conduction loss to ≤0.7 W at 100 A, enabling air-cooled design without forced ventilation.

Use Scenario: Secondary-side synchronous rectifier in isolated 48 V → 12 V telecom DC-DC converter.

IC Role / Device Role / Timing Role: Active rectifying switch replacing Schottky diode; driven by transformer-coupled gate signal.

Use Value: Body diode forward voltage (V_SD = 1.3 V) and Q_rr = 143 nC enable >3% efficiency gain over 40 V Schottky at 60 A load.

UPS Battery Switch

Industrial Power Supply Output Stage

Use Scenario: Bidirectional battery disconnect switch in 55 V nominal UPS system with 100 A continuous load.

IC Role / Device Role / Timing Role: Single-pole, high-current isolation switch controlled via optocoupled gate driver.

Use Value: Fully rated 55 V V_DS and 1050 mJ E_AS ensure reliable interruption of inductive battery fault currents without failure.

Use Scenario: Primary-side high-side switch in 55 V input, 3 kW industrial AC-DC front-end with active PFC.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC stage operating at 70 kHz.

Use Value: 146 nC Q_g and 211 pF C_rss allow use of cost-effective 2 A gate drivers while maintaining <1% switching loss at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N55F6	55 V V_DS, 7.5 mΩ R_DS(on), but higher Q_g (160 nC) and lower I_D (100 A)	Better conduction loss at mid-load, but increased gate drive demand and reduced peak current margin	Preferable where thermal budget favors lower R_DS(on) and gate drive strength permits higher Q_g.
IXTH110N10L2	100 V V_DS, 9.5 mΩ R_DS(on), 175°C rating, TO-247 package	Higher voltage margin and superior thermal resistance (R_θJC = 0.45°C/W), but larger footprint and through-hole mounting	Select when 100 V bus compatibility or enhanced thermal performance justifies board space and assembly cost.

Compared with STP110N55F6 and IXTH110N10L2, the IRF3205STRRPBF offers optimal balance of low R_DS(on), surface-mount D2PAK packaging, and proven avalanche ruggedness for 48–55 V systems - making it preferred for space-constrained, high-current, and thermally demanding applications where lead-free compliance is mandatory.

Availability

IRF3205STRRPBF is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and industrial DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for IRF3205STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon-based power devices.

The HEXFET® product line was originally developed by International Rectifier and continues under Infineon to deliver high-efficiency, rugged, and thermally optimized power MOSFETs for high-current switching applications in industrial, computing, and renewable energy systems.

FAQ

What is the maximum continuous drain current for IRF3205STRRPBF at 100°C case temperature?

The maximum continuous drain current is 80 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures - not package limitation, which caps at 75 A under standard PCB mounting conditions.

Does IRF3205STRRPBF require a gate resistor for stability in high-frequency switching?

Yes - a gate resistor (typically 4.5 Ω to 10 Ω) is recommended to dampen ringing caused by gate loop inductance interacting with 146 nC Q_g and 211 pF C_rss. Without it, overshoot exceeding ±20 V V_GS rating may occur, risking gate oxide damage during fast transitions above 100 kHz.

Can IRF3205STRRPBF replace IRF3205LPbF in a design?

Yes, with mechanical and thermal considerations: both share identical electrical specs, but IRF3205STRRPBF uses D2PAK (surface-mount) while IRF3205LPbF uses TO-262 (through-hole). PCB layout must accommodate the D2PAK's exposed drain pad and thermal pad soldering - no direct footprint compatibility.

What is the typical reverse recovery charge (Q_rr) of the integrated body diode?

The typical reverse recovery charge is 143 nC, measured at T_J = 25°C, I_F = 62 A, di/dt = 100 A/µs, and V_DD = 44 V. This value directly impacts commutation losses in synchronous rectification and must be factored into gate driver timing to avoid shoot-through in half-bridge configurations.

IRF3205STRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 62A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 146 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3247 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3205STRRPBF FAQ

1.How can I place an order for IRF3205STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3205STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3205STRRPBF reliable?

The price and inventory of IRF3205STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3205STRRPBF is usually 5 days.

3.What payment methods are accepted for IRF3205STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3205STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3205STRRPBF?

IRF3205STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3205STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3205STRRPBF?

For technical support, including IRF3205STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3205STRRPBF requirements.

6.How does Aetrix verify that IRF3205STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF3205STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3205STRRPBF meets industry standards.

7.What is the process for return or replacement of IRF3205STRRPBF?

All IRF3205STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3205STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3205STRRPBF part is unused and in its original packaging.

Return procedure for IRF3205STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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