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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3205Z

Name: IRF3205Z
Brand: Infineon Technologies
SKU: IRF3205Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3205Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF3205Z.pdf

Description:: MOSFET N-CH 55V 75A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3205Z from Infineon Technologies is an N-channel automotive-grade HEXFET® Power MOSFET in TO-262 (I²PAK) package, rated for 55V V_DSS, 6.5mΩ R_DS(on) at V_GS = 10V, and 75A continuous drain current at T_C = 25°C. It features 175°C junction temperature rating, fast switching (t_r = 95ns, t_f = 67ns), and tested repetitive avalanche capability-designed for high-current DC-DC converters and motor control in engine management systems.

For engineers reviewing the IRF3205Z datasheet, IRF3205Z pinout, IRF3205Z application, or IRF3205Z equivalent, key selection criteria include its low R_DS(on) at 10V gate drive, body diode recovery performance (t_rr = 28–42ns, Q_rr = 25–38nC), thermal resistance (R_θJC = 0.90°C/W), and automotive qualification per AEC-Q101.

Technical Context

This MOSFET employs advanced silicon processing to minimize on-resistance per die area while maintaining robust avalanche ruggedness. Its gate charge profile (Q_g = 76–110nC, Q_gd = 30nC) supports efficient hard-switching in synchronous buck topologies up to 200kHz.

The integrated body diode exhibits low forward voltage (V_SD ≤ 1.3V at 66A) and controlled reverse recovery, enabling reliable operation in freewheeling paths without external Schottky supplementation in 12V/24V automotive power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55V - Maximum blocking voltage in high-side switch configurations with 12V/24V battery systems including load dump transients.
R_DS(on)	4.9–6.5mΩ @ V_GS = 10V - Enables <1.5W conduction loss at 60A, critical for thermally constrained under-hood modules.
I_D (cont)	75A @ T_C = 25°C - Supports peak motor phase currents in 500W–1kW brushless DC drivers without derating.
t_r/t_f	95ns / 67ns - Allows clean edge control in PWM-driven solenoid and injector drivers with minimal EMI generation.
E_AS	110mJ (tested) - Sustains unclamped inductive energy during fault events in starter relays and HVAC actuators.
T_J max	175°C - Meets AEC-Q101 thermal stress requirements for under-bonnet placement near exhaust manifolds.
Q_rr	25–38nC - Limits diode recovery losses and cross-conduction risk in synchronous rectification at 100kHz.

Pinout & Package

IRF3205Z uses a 3-pin TO-262 (I²PAK) surface-mount package with isolated tab. The case serves as the Drain terminal, enabling direct thermal mounting to heatsinks without insulating pads when electrically referenced to system ground.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically connected to package tab; requires grounded heatsink or insulated mounting per isolation needs.
Source	Reference node for gate drive and current sensing	Low-inductance connection point for shunt resistors and gate driver return paths.
Gate	Control electrode for channel modulation	High-impedance input requiring <110nC total charge for full enhancement; sensitive to ESD.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	6.5mΩ enables >96% efficiency in 48V-to-12V DC-DC stages at 50A output with minimal heatsink volume.
Repetitive avalanche rating	Tested to 110mJ single-pulse and validated for repeated operation below T_Jmax, eliminating need for external clamping in inductive load switching.
Fast body diode recovery	t_rr = 28–42ns and Q_rr = 25–38nC reduce shoot-through risk and EMI in half-bridge motor drives.
175°C junction rating	Supports operation in ambient temperatures up to 125°C with 50°C thermal margin, satisfying AEC-Q101 Grade 0 requirements.

Applications

Engine Control Unit (ECU) Injector Driver

Automotive DC-DC Converter

Use Scenario: High-speed switching of fuel injectors in gasoline direct injection systems operating at 12V battery supply with PWM frequencies up to 20kHz.

IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil current; handles 10A peak pulses with <1µs turn-off to ensure precise fuel metering.

Use Value: Fast fall time (67ns) and low gate charge enable sub-millisecond pulse width resolution, improving combustion efficiency and emissions compliance.

Use Scenario: Primary switch in 48V-to-12V bidirectional buck converter for mild hybrid vehicle architectures.

IC Role / Device Role / Timing Role: High-current synchronous rectifier in secondary side; conducts 60A continuous with forced-air cooling.

Use Value: 4.9mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 10mΩ MOSFETs, lowering thermal design burden and enabling smaller heatsinks.

Electric Power Steering (EPS) Motor Phase Switch

Starter Relay Replacement Module

Use Scenario: Half-bridge leg in 3-phase inverter driving 300W brushless motor for column-assist EPS systems.

IC Role / Device Role / Timing Role: N-channel high-side and low-side switch; operates with bootstrap gate drive and 100kHz PWM.

Use Value: Repetitive avalanche capability absorbs inductive kickback during emergency stop, eliminating need for external TVS diodes.

Use Scenario: Solid-state replacement for electromechanical starter relays in commercial truck starting circuits (24V system).

IC Role / Device Role / Timing Role: Single-pole high-current switch handling 300A inrush current during cranking.

Use Value: 440A pulsed drain rating and 175°C junction rating ensure reliability across -40°C to +125°C ambient, reducing contact wear failures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	75V V_DSS, 7.5mΩ R_DS(on), TO-220 package, no AEC-Q101 qualification	Lacks automotive qualification; higher R_DS(on) increases conduction loss by ~15% at 60A	Acceptable for non-automotive industrial motor drives where qualification and thermal margin are less critical.
IXTH75N10L2	100V V_DSS, 10mΩ R_DS(on), TO-247 package, 175°C rating, AEC-Q101 qualified	Higher voltage rating but double R_DS(on); larger footprint and higher gate charge (140nC)	Suitable only if system requires >55V blocking or dual-voltage compatibility; otherwise over-specified and less efficient.

Compared with STP75NF75 and IXTH75N10L2, IRF3205Z delivers optimal balance of low on-resistance, automotive qualification, and compact TO-262 packaging-making it preferred for space-constrained, thermally demanding 12V/24V automotive power stages where efficiency and reliability are co-prioritized.

Availability

IRF3205Z is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and automotive DC-DC converters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IRF3205Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to IATF 16949.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion in automotive and industrial environments-emphasizing low R_DS(on), rugged avalanche performance, and AEC-Q101 compliance.

FAQ

What is the maximum gate-source voltage for safe operation of IRF3205Z?

The absolute maximum V_GS is ±20V. Operation beyond ±20V risks permanent gate oxide damage. Recommended gate drive is 10V for full enhancement with margin; 4.5V is minimum threshold (V_GS(th) = 2.0–4.0V), but R_DS(on) rises significantly below 8V, increasing conduction loss.

Does IRF3205Z require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to dampen ringing and limit peak gate current. For typical 12V automotive gate drivers, a 6.8Ω resistor is used (per datasheet test conditions). Values between 4.7Ω and 10Ω balance switching speed and EMI; lower values increase dV/dt stress on gate driver and layout parasitics.

Can IRF3205Z be used in parallel configurations, and what precautions apply?

Yes-its positive temperature coefficient of R_DS(on) enables current sharing. Key precautions include matched PCB trace lengths, symmetrical gate drive routing, individual gate resistors (not shared), and thermal coupling via common heatsink. Derate total current by 15% versus sum of individual ratings to account for thermal imbalance.

Is the body diode in IRF3205Z suitable for synchronous rectification in a 100kHz DC-DC converter?

Yes-the body diode has t_rr = 28–42ns and Q_rr = 25–38nC, making it viable for synchronous rectification up to 100kHz in 12V output stages. However, for >150kHz or high-efficiency designs, a discrete Schottky or GaN FET may yield lower recovery loss and reduced EMI.

IRF3205Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 66A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF3205Z FAQ

1.How can I place an order for IRF3205Z through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3205Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3205Z reliable?

The price and inventory of IRF3205Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3205Z is usually 5 days.

3.What payment methods are accepted for IRF3205Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3205Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3205Z?

IRF3205Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3205Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3205Z?

For technical support, including IRF3205Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3205Z requirements.

6.How does Aetrix verify that IRF3205Z is sourced from the original manufacturer or authorized distributors?

All IRF3205Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3205Z meets industry standards.

7.What is the process for return or replacement of IRF3205Z?

All IRF3205Z units undergo pre-shipment inspection (PSI). If there is an issue with IRF3205Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3205Z part is unused and in its original packaging.

Return procedure for IRF3205Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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