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Infineon Technologies IRF3205ZLPBF
- Part No.:
- IRF3205ZLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF3205ZLPBF.pdf
- Description:
- MOSFET N-CH 55V 75A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:8,185
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Product details
Overview
IRF3205ZLPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET in D²PAK (TO-263) package, rated for 55V VDSS, 6.5mΩ RDS(on) at VGS = 10V, and 75A continuous drain current at TC = 25°C. It features 175°C maximum junction temperature, fast switching (tr = 95ns, tf = 67ns), and rated repetitive avalanche energy up to 440mJ.
For engineers reviewing the IRF3205ZLPBF datasheet, IRF3205ZLPBF pinout, IRF3205ZLPBF application, or IRF3205ZLPBF equivalent, key selection criteria include on-resistance vs. thermal derating, gate charge (Qg = 110nC), body diode recovery (Qrr = 38nC), and SOA limits under unclamped inductive switching.
Technical Context
This MOSFET employs advanced silicon processing to minimize RDS(on) per die area while maintaining robust avalanche capability. Its gate threshold voltage (VGS(th) = 2.0–4.0V) supports standard 10V logic-level drive, and its low Ciss (3450pF) and Crss (310pF) enable high-frequency switching in DC-DC converters and motor drives.
The integrated body diode exhibits VSD = 1.3V at 66A and trr = 42ns with Qrr = 38nC, making it suitable for synchronous rectification and freewheeling paths where reverse recovery loss must be minimized. Thermal resistance RθJC = 0.90°C/W enables high-power operation with effective heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55V - Maximum blocking voltage before avalanche; defines upper limit for bus voltage in buck converters and H-bridge motor drivers. |
| RDS(on) | 6.5mΩ max @ VGS = 10V, TJ = 25°C - Directly determines conduction loss (Pcond ≈ ID² × RDS(on)) at rated current. |
| ID (continuous) | 75A @ TC = 25°C - Package-limited current capacity; derates to 170A pulsed (IDM) for short-duration loads. |
| Qg | 110nC max - Total gate charge required to fully switch; impacts driver sizing and switching loss (Esw ∝ Qg × VGS). |
| EAS | 110mJ tested - Single-pulse avalanche energy rating; enables safe operation during inductive turn-off transients without external snubbers. |
| TJ max | 175°C - Maximum junction temperature; sets thermal design margin for PCB layout and heatsink selection. |
| Coss | 550pF typ - Output capacitance at VDS = 25V; influences zero-voltage switching (ZVS) feasibility and turn-off loss. |
Pinout & Package
IRF3205ZLPBF uses the surface-mount D²PAK (TO-263) package with three terminals: Drain (tab), Source (pins 1 & 2), and Gate (pin 3). The exposed drain pad provides low-inductance, high-current path and serves as primary thermal interface to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current sink terminal | Electrically and thermally connected to PCB copper pour; requires solder mask opening and thermal vias for optimal heat transfer. |
| Source (Pins 1 & 2) | Current return path / reference node | Parallel pins reduce source inductance (LS = 7.5nH); critical for minimizing gate oscillation and shoot-through risk in half-bridges. |
| Gate (Pin 3) | Control input | High-impedance MOS gate requiring <1µA bias; sensitive to ESD and ringing-requires local RC snubber if driving long traces. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 6.5mΩ max enables <0.4W conduction loss at 8A, reducing heatsink requirements in 12V/48V power stages. |
| 175°C junction rating | Allows sustained operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial PLCs) without derating. |
| Repetitive avalanche rated | Validated for repeated unclamped inductive switching up to TJmax; eliminates need for external clamping diodes in relay drivers and solenoid controls. |
| Fast body diode recovery | Qrr = 38nC and trr = 42ns support efficient synchronous rectification in LLC resonant converters above 100kHz. |
Applications
| DC-DC Buck Converter | H-Bridge Motor Driver |
|---|---|
Use Scenario: High-current 12V-to-5V step-down converter for server VRMs and telecom power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 300kHz with 10V gate drive. Use Value: 6.5mΩ RDS(on) reduces conduction loss by >35% versus 10mΩ alternatives, improving full-load efficiency from 92% to 94.2%. | Use Scenario: 24V brushed DC motor control in automated guided vehicles (AGVs) with bidirectional torque and regenerative braking. IC Role / Device Role / Timing Role: High-current quadrant-switching device in half-bridge leg, handling 60A peak load with 10µs dead-time. Use Value: Rated repetitive avalanche allows safe energy recirculation during rapid deceleration without external flyback diodes or snubbers. |
| Uninterruptible Power Supply (UPS) | Inductive Load Switching |
Use Scenario: Battery-backed 48V DC input stage feeding a push-pull inverter in line-interactive UPS systems. IC Role / Device Role / Timing Role: Primary switching element in high-efficiency DC link stage, switching at 50kHz with soft-start sequencing. Use Value: 175°C TJmax and 0.90°C/W RθJC sustain 95% duty cycle operation under full load without thermal throttling. | Use Scenario: Solid-state replacement for electromechanical relays controlling HVAC compressors and industrial solenoids. IC Role / Device Role / Timing Role: Unclamped inductive switch with controlled turn-off dv/dt to suppress arcing and EMI. Use Value: 440mJ single-pulse avalanche energy rating absorbs stored inductor energy (½LI²) from 100mH/10A loads without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF75 | RDS(on) = 10.5mΩ @ 10V, higher Qg (140nC), TO-220 package | Larger footprint, lower current density; less suitable for compact D²PAK layouts | Prefer when cost sensitivity outweighs thermal performance and board space constraints. |
| IXTH75N10L2 | RDS(on) = 9.5mΩ @ 10V, 100V VDSS, TO-247 package | Higher voltage rating but larger package and slower switching (tf = 110ns) | Select only when system requires >55V blocking or legacy TO-247 mechanical compatibility. |
Compared with STP75NF75 and IXTH75N10L2, IRF3205ZLPBF delivers superior current density and thermal efficiency in D²PAK form factor, enabling smaller heatsinks and higher power density in 48V industrial and automotive auxiliary power designs.
Availability
IRF3205ZLPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, uninterruptible power supplies, and inductive load switching requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRF3205ZLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency switching in medium-voltage, high-current applications such as industrial motor drives, renewable energy inverters, and server power supplies.
FAQ
What is the maximum continuous drain current for IRF3205ZLPBF at 100°C case temperature?
The maximum continuous drain current is 180A at TC = 25°C (silicon-limited) and 170A at TC = 100°C (package-limited), per Absolute Maximum Ratings table. Derating follows linear 1.1W/°C slope above 25°C case temperature, yielding ~100A at TC = 100°C for sustained operation with proper heatsinking.
Does IRF3205ZLPBF require a gate resistor for stability in high-speed switching?
Yes-a series gate resistor (typically 5–22Ω) is recommended to dampen parasitic oscillation caused by LS (7.5nH) and Ciss (3450pF), especially in half-bridge configurations. Without it, ringing can exceed VGS absolute maximum (±20V) and cause false turn-on or accelerated gate oxide wear.
Can IRF3205ZLPBF be used in parallel configurations for higher current handling?
Yes-its positive temperature coefficient of RDS(on) (normalized to 2.5× at 175°C) ensures inherent current sharing. Successful parallel operation requires matched layout (symmetrical trace length, shared gate drive node), Kelvin-source connections, and individual gate resistors to prevent oscillatory coupling between devices.
What is the typical reverse recovery charge (Qrr) of the body diode, and how does it affect hard-switched topologies?
Qrr is 38nC at IF = 66A, TJ = 25°C. In hard-switched converters, this charge causes brief shoot-through current during commutation, increasing switching loss and EMI. Layout minimization of loop inductance and use of gate drive optimization (e.g., active Miller clamp) mitigate these effects.
IRF3205ZLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6.5mOhm @ 66A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3450 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 170W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRF3205ZLPBF FAQ
1.How can I place an order for IRF3205ZLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF3205ZLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF3205ZLPBF reliable?
The price and inventory of IRF3205ZLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3205ZLPBF is usually 5 days.
3.What payment methods are accepted for IRF3205ZLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3205ZLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF3205ZLPBF?
IRF3205ZLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF3205ZLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF3205ZLPBF?
For technical support, including IRF3205ZLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3205ZLPBF requirements.
6.How does Aetrix verify that IRF3205ZLPBF is sourced from the original manufacturer or authorized distributors?
All IRF3205ZLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3205ZLPBF meets industry standards.
7.What is the process for return or replacement of IRF3205ZLPBF?
All IRF3205ZLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3205ZLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF3205ZLPBF part is unused and in its original packaging.
Return procedure for IRF3205ZLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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