Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3205ZS

Name: IRF3205ZS
Brand: Infineon Technologies
SKU: IRF3205ZS
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF3205ZS

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3205ZS.pdf

Description:: MOSFET N-CH 55V 75A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,306

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF3205ZS from Infineon Technologies is an N-channel automotive-grade HEXFET® Power MOSFET in TO-220AB package, rated for 55V V_DSS, 6.5mΩ R_DS(on) at V_GS = 10V, and 75A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 95ns, t_f = 67ns), and rated repetitive avalanche capability - deployed in high-current DC motor drives and battery disconnect circuits.

For engineers reviewing the IRF3205ZS datasheet, IRF3205ZS pinout, IRF3205ZS application, or IRF3205ZS equivalent, key selection criteria include on-resistance vs. thermal derating, gate charge (Q_g = 76–110nC), body diode recovery (Q_rr = 25–38nC, t_rr = 28–42ns), and avalanche energy rating (E_AS = 110mJ tested).

Technical Context

This MOSFET uses advanced silicon processing to minimize R_DS(on) per unit area while maintaining robust short-circuit and avalanche ruggedness. Its 175°C T_J rating enables operation in under-hood automotive environments without forced cooling.

The device integrates a low-V_SD (≤1.3V) body diode with controlled reverse recovery (Q_rr, t_rr) and exhibits low output capacitance (C_oss = 550pF typical at V_DS = 25V), supporting efficient hard-switched DC-DC and motor control topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 48V automotive systems.
R_DS(on)	6.5mΩ max @ V_GS = 10V, T_J = 25°C - Determines conduction loss in high-current paths (e.g., 75A yields ~37W worst-case I²R loss).
I_D (continuous)	75A @ T_C = 25°C - Package-limited current capacity; derates to 180A pulsed (I_DM) for short-duration loads.
Q_g	76–110nC - Total gate charge dictates driver strength requirement; impacts switching loss and gate drive power.
E_AS	110mJ (tested) - Single-pulse unclamped inductive avalanche energy; validates robustness during load dump or inductive turn-off events.
T_J max	175°C - Enables reliable operation in engine bay locations without active cooling or oversized heatsinks.
t_rr	28–42ns - Body diode reverse recovery time; critical for synchronous rectification and freewheeling efficiency.

Pinout & Package

IRF3205ZS is housed in a TO-220AB package with isolated tab (non-conductive mounting surface). The case serves as the Drain terminal, enabling direct heatsink attachment without insulating hardware when used with non-grounded heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / High-side switch node	Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits.
Source	Current return path / Reference node for gate drive	Low-inductance connection point for source loop; internal inductance LS = 7.5nH affects switching ringing.
Gate	Control input for channel modulation	High-impedance CMOS-compatible input; requires 10V for full enhancement; threshold V_GS(th) = 2.0–4.0V.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	6.5mΩ max enables <1W conduction loss at 40A, reducing thermal burden in space-constrained modules.
175°C junction rating	Supports operation in ambient temperatures up to 125°C with appropriate thermal design, meeting AEC-Q101 requirements.
Repetitive avalanche capability	Rated for repeated unclamped inductive switching events without degradation - validated per AN-1005 methodology.
Fast body diode	V_SD ≤ 1.3V and Q_rr = 25–38nC reduce freewheeling losses and EMI in H-bridge motor drivers.
Low gate charge	Q_g = 76–110nC allows use of low-power gate drivers (e.g., TC4427) without excessive drive loss.

Applications

Automotive Starter Motor Control

48V Mild Hybrid Battery Disconnect

Use Scenario: High-current switching of starter solenoid or pre-charge circuit during cold cranking (−40°C to +125°C ambient).

IC Role / Device Role / Timing Role: Main power switch controlling 50–100A peak current; operates in linear region briefly during engagement.

Use Value: 175°C T_J rating and 110mJ E_AS ensure reliability during repeated inrush and stall conditions.

Use Scenario: Isolating 48V battery from downstream DC-DC converters during fault or sleep mode.

IC Role / Device Role / Timing Role: Low-loss bidirectional isolation switch; conducts forward (battery-to-load) and reverse (load-to-battery) via body diode.

Use Value: 6.5mΩ R_DS(on) limits voltage drop to <0.33V at 50A, preserving system efficiency and minimizing heat generation.

Industrial DC Motor Drive

Truck/Bus HVAC Blower Control

Use Scenario: Half-bridge leg in 24–48V brushed DC motor controllers for conveyor or pump systems.

IC Role / Device Role / Timing Role: High-side or low-side switching element; switched at 1–20kHz with PWM duty cycle modulation.

Use Value: Fast t_r/t_f (95ns/67ns) and low C_oss (550pF) reduce switching loss and enable higher frequency operation.

Use Scenario: Speed-controlled blower fan in commercial vehicle climate systems, subject to vibration and wide temperature swings.

IC Role / Device Role / Timing Role: Low-side switch in PWM-driven fan driver; handles 30–60A continuous with intermittent surges.

Use Value: Repetitive avalanche rating protects against inductive kickback from motor windings during rapid PWM transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	75V V_DSS, 10mΩ R_DS(on), TO-220 package, no AEC-Q101 qualification	Higher voltage margin but higher conduction loss; not automotive-qualified	Preferable for industrial 75V systems where qualification isn't required and cost is prioritized.
IXTH75N10L2	100V V_DSS, 12.5mΩ R_DS(on), TO-247 package, 175°C rating, avalanche-rated	Larger footprint, higher R_DS(on), but superior SOA and pulse current capability	Preferred for high-reliability 100V designs needing >100A pulsed current and enhanced thermal headroom.

Compared with STP75NF75 and IXTH75N10L2, IRF3205ZS offers the lowest R_DS(on) in its voltage class with automotive qualification, making it optimal for thermally constrained 48V/55V automotive power stages where conduction loss dominates.

Availability

IRF3205ZS is available at Aetrix Electronics and suitable for automotive starter control, 48V battery disconnect, and industrial DC motor drive applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IRF3205ZS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line delivers high-current, high-ruggedness silicon solutions optimized for automotive power distribution, motor control, and energy-efficient switching in harsh environments.

FAQ

Is IRF3205ZS AEC-Q101 qualified?

Yes, IRF3205ZS is explicitly designed and qualified to AEC-Q101 standards for automotive applications, including stress testing for temperature cycling, humidity, and mechanical shock. Its 175°C T_J rating and repetitive avalanche validation align with automotive reliability requirements.

What is the recommended gate resistor value for 20kHz PWM operation?

A 10Ω to 22Ω gate resistor is recommended to balance switching speed and gate driver stress. With Q_g = 76–110nC and typical driver output impedance, this range achieves ~100ns rise/fall times while limiting peak gate current to <1A and suppressing oscillation from LS/LD parasitics.

Can IRF3205ZS be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (R_DS(on) increases with T_J) enables inherent current sharing. For stable parallel operation, match devices from same wafer lot, use symmetrical PCB layout, and ensure identical gate drive routing and thermal mounting conditions.

Does the TO-220AB package require electrical isolation from the heatsink?

Yes - the metal tab is internally connected to the Drain terminal. Unless the heatsink is electrically floating or referenced to system Drain potential, a UL-certified insulating pad (e.g., mica or silicone-based) and shoulder washer must be used to prevent short circuits and ensure safety compliance.

IRF3205ZS Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 66A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3205ZS FAQ

1.How can I place an order for IRF3205ZS through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3205ZS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3205ZS reliable?

The price and inventory of IRF3205ZS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3205ZS is usually 5 days.

3.What payment methods are accepted for IRF3205ZS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3205ZS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3205ZS?

IRF3205ZS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3205ZS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3205ZS?

For technical support, including IRF3205ZS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3205ZS requirements.

6.How does Aetrix verify that IRF3205ZS is sourced from the original manufacturer or authorized distributors?

All IRF3205ZS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3205ZS meets industry standards.

7.What is the process for return or replacement of IRF3205ZS?

All IRF3205ZS units undergo pre-shipment inspection (PSI). If there is an issue with IRF3205ZS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3205ZS part is unused and in its original packaging.

Return procedure for IRF3205ZS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…