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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3205ZSTRRPBF

Name: IRF3205ZSTRRPBF
Brand: Infineon Technologies
SKU: IRF3205ZSTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3205ZSTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3205ZSTRRPBF.pdf

Description:: MOSFET N-CH 55V 75A D2PAK

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Product details

Overview

IRF3205ZSTRRPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET with 55V V_DSS, 6.5mΩ R_DS(on) at V_GS = 10V, and 75A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_d(on) = 18ns, t_f = 67ns), and rated repetitive avalanche energy up to 440mJ.

For engineers reviewing the IRF3205ZSTRRPBF datasheet, IRF3205ZSTRRPBF pinout, IRF3205ZSTRRPBF application, or IRF3205ZSTRRPBF equivalent, key selection criteria include on-resistance vs. thermal derating, gate charge (Q_g = 110nC), body diode recovery (Q_rr = 38nC), and TO-220AB package thermal resistance (R_θJC = 0.90°C/W).

Technical Context

This MOSFET employs advanced silicon processing for ultra-low conduction loss per die area and integrates a robust intrinsic body diode with 1.3V forward voltage and 28–42ns reverse recovery time. Its gate threshold voltage (2.0–4.0V) enables compatibility with 3.3V and 5V logic-level drivers when operated with sufficient V_GS margin.

The device supports unclamped inductive switching with validated repetitive avalanche capability up to T_jmax, enabled by thermally optimized packaging and controlled R_DS(on) temperature coefficient (0.051V/°C). Thermal impedance data (Z_thJC) confirms safe single-pulse operation under transient loads up to 100ms.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55V - Maximum blocking voltage before avalanche onset; defines upper limit for DC bus or flyback clamp applications.
R_DS(on)	6.5mΩ max @ V_GS = 10V, T_J = 25°C - Enables <1W conduction loss at 40A, critical for high-current DC-DC and motor drive stages.
I_D (cont)	75A @ T_C = 25°C - Silicon-limited current rating; actual usable current depends on heatsinking and ambient conditions.
Q_g	110nC max - Determines gate driver power requirement and switching loss; impacts PWM efficiency above 50kHz.
E_AS	110mJ tested - Single-pulse avalanche energy rating; validates ruggedness against inductive kick in relay/snubberless designs.
T_J max	175°C - Enables operation in sealed enclosures or high-ambient industrial environments without forced cooling.
C_iss	3450pF typ - Input capacitance affecting gate drive loop stability and Miller effect during high-dV/dt transitions.

Pinout & Package

IRF3205ZSTRRPBF uses the TO-220AB package: insulated tab, vertical lead orientation, and standard 6-32/M3 mounting torque (1.1N·m). Case-to-sink thermal resistance is 0.50°C/W with flat greased surface.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Electrically connected to metal tab; requires isolation washer unless heatsink is floating.
Source	Reference node for gate control & current return	Low-inductance connection point for gate driver ground and load return path.
Gate	Control terminal for channel modulation	High-impedance input requiring low-impedance driver (<10Ω) to minimize switching losses.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	6.5mΩ enables <0.25W conduction loss at 30A, reducing heatsink size in 12V/24V power stages.
175°C junction rating	Extends lifetime in sealed automotive junction boxes or industrial PLC modules without active cooling.
Fast switching (t_f = 67ns)	Supports >100kHz PWM in synchronous buck converters while maintaining <5% duty-cycle dead-time margin.
Repetitive avalanche rated	Validated for ≥1000 cycles at I_AR = 75A, enabling elimination of external snubbers in solenoid drivers.
Low Q_gd/Q_gs ratio	30nC/21nC = 1.43 - Reduces Miller-induced shoot-through risk in half-bridge configurations.

Applications

DC Motor Drive

Switching Power Supply

Use Scenario: H-bridge control of 24V brushed DC motors in automated gate operators.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling bidirectional 60A peak currents.

Use Value: 6.5mΩ R_DS(on) limits I²R loss to ≤22W at 60A, allowing passive heatsinking in IP65-rated enclosures.

Use Scenario: Primary-side switch in 500W LLC resonant converter for telecom rectifiers.

IC Role / Device Role / Timing Role: Main power switch operating at 200kHz with ZVS-assisted turn-on.

Use Value: Low C_oss (550pF) and fast t_r/t_f reduce switching loss to <1.8W at full load, improving efficiency to 94.2%.

Automotive Lighting

Industrial Solenoid Control

Use Scenario: Headlamp high-beam dimming via PWM in 12V vehicle electrical systems.

IC Role / Device Role / Timing Role: Low-side switch modulating 15A LED string current at 1kHz.

Use Value: 175°C rating ensures reliability during engine-bay thermal soak (≥125°C ambient), eliminating derating.

Use Scenario: 24V DC solenoid actuator control in pneumatic valve manifolds.

IC Role / Device Role / Timing Role: Unclamped inductive switch managing 40A turn-off transients.

Use Value: Repetitive avalanche rating (E_AR = 78mJ) absorbs stored inductor energy without external clamping diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	75V V_DSS, 10mΩ R_DS(on), TO-220 package	Higher voltage margin but 54% higher conduction loss at 60A	Select when system bus exceeds 55V or avalanche energy margin must exceed 150mJ.
IRFB3004PBF	40V V_DSS, 3.1mΩ R_DS(on), TO-220 package	Lower voltage rating but 52% lower R_DS(on) and 30% lower Q_g	Select for 12V battery systems where <3mΩ on-resistance improves efficiency at sub-50A loads.

Compared with STP75NF75 and IRFB3004PBF, IRF3205ZSTRRPBF offers optimal balance of 55V rating, 6.5mΩ conduction loss, and proven avalanche ruggedness-making it preferred for 24V industrial motor drives where voltage margin and thermal headroom are equally critical.

Availability

IRF3205ZSTRRPBF is available at Aetrix Electronics and suitable for DC motor drives, switching power supplies, automotive lighting systems, and industrial solenoid controllers requiring stable component supply and long-term manufacturability.

Supply support for IRF3205ZSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-current, high-ruggedness switching in automotive, industrial, and renewable energy systems where thermal reliability and avalanche tolerance are mandatory.

FAQ

Is IRF3205ZSTRRPBF pin-compatible with the legacy IRF3205PbF?

Yes, IRF3205ZSTRRPBF is a direct replacement for IRF3205PbF in TO-220AB packages, sharing identical pinout, thermal footprint, and mechanical dimensions. The "Z" suffix denotes improved avalanche rating and tighter R_DS(on) distribution, while "TRRPBF" indicates tape-and-reel packaging with lead-free finish.

What is the maximum recommended gate resistor for 100kHz PWM operation?

A 6.8Ω gate resistor is validated in the datasheet for 100kHz operation with V_DD = 28V and I_D = 66A. Using >10Ω increases t_d(off) beyond 45ns and raises switching loss; <4.7Ω risks ringing due to gate loop inductance and requires careful PCB layout with short, wide traces.

Does the body diode support synchronous rectification in buck converters?

No-the body diode has 1.3V forward voltage and 28–42ns reverse recovery time, making it unsuitable for synchronous rectification above 50kHz. External Schottky or MOSFET-based synchronous rectifiers are required to maintain efficiency in high-frequency buck topologies.

Can IRF3205ZSTRRPBF be used without a heatsink in 25°C ambient at 30A continuous?

No. At 30A, conduction loss is ~5.9W (30² × 0.0065). With R_θJA = 62°C/W (free-air), junction temperature rise would exceed 365°C-far above 175°C limit. A minimum heatsink with R_θSA ≤ 2.5°C/W is required to keep T_J ≤ 125°C at 30A.

IRF3205ZSTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 66A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3205ZSTRRPBF FAQ

1.How can I place an order for IRF3205ZSTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3205ZSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3205ZSTRRPBF reliable?

The price and inventory of IRF3205ZSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3205ZSTRRPBF is usually 5 days.

3.What payment methods are accepted for IRF3205ZSTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3205ZSTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3205ZSTRRPBF?

IRF3205ZSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3205ZSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3205ZSTRRPBF?

For technical support, including IRF3205ZSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3205ZSTRRPBF requirements.

6.How does Aetrix verify that IRF3205ZSTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF3205ZSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3205ZSTRRPBF meets industry standards.

7.What is the process for return or replacement of IRF3205ZSTRRPBF?

All IRF3205ZSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3205ZSTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3205ZSTRRPBF part is unused and in its original packaging.

Return procedure for IRF3205ZSTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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