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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3305

Name: IRF3305
Brand: Infineon Technologies
SKU: IRF3305
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3305

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF3305.pdf

Description:: MOSFET N-CH 55V 75A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3305 from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, rated for 55V V_DSS, 75A continuous drain current at T_C = 25°C, and 8.0 mΩ R_DS(on) at V_GS = 10V. It integrates a fast-recovery body diode (t_rr = 57–86 ns, Q_rr = 130–190 nC) and supports unclamped inductive switching with 140 mJ single-pulse avalanche energy, making it suitable for high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF3305 datasheet, IRF3305 pinout, IRF3305 application, or IRF3305 equivalent, key selection criteria include its low on-resistance at high current, robust avalanche capability, thermal resistance (R_θJC = 0.45 °C/W), and gate charge profile (Q_g = 100–150 nC) - all critical for hard-switched power stages operating up to 100 kHz.

Technical Context

This MOSFET employs planar silicon technology optimized for high-current conduction and fast switching in non-isolated buck, synchronous rectifier, and H-bridge topologies. Its gate threshold voltage (2.0–4.0 V) enables direct drive from 3.3 V or 5 V logic with appropriate gate buffering, while the 4.5 nH internal drain inductance and 7.5 nH source inductance impact layout-sensitive switching behavior.

The device's safe operating area (SOA) is limited by R_DS(on) at DC and pulse widths >100 µs, and by thermal impedance at shorter pulses. Avalanche performance is characterized under standardized unclamped inductive test conditions (L = 0.17 mH, I_AS = 75 A, V_GS = 10 V), with full production testing to 140 mJ E_AS.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; defines maximum bus voltage in buck or half-bridge applications.
R_DS(on)	8.0 mΩ @ V_GS = 10 V, T_J = 25°C - Determines conduction loss at 75 A: ~45 W worst-case, requiring heatsinking.
I_D (cont)	75 A @ T_C = 25°C - Continuous current rating assuming case temperature maintained at 25°C via heatsink.
Q_g	100–150 nC - Total gate charge dictates gate driver current requirement (e.g., 2 A avg. for 75 ns turn-on).
t_rr / Q_rr	57–86 ns / 130–190 nC - Body diode recovery metrics affecting shoot-through risk and snubber design in synchronous rectification.
E_AS	140 mJ (tested) - Single-pulse avalanche energy rating; enables reliable operation during inductive load turn-off transients.
R_θJC	0.45 °C/W - Junction-to-case thermal resistance; used with heatsink R_θCS = 0.50 °C/W to calculate total thermal path.

Pinout & Package

IRF3305 is housed in a through-hole TO-220AB package with standard three-terminal configuration: Drain (tab), Source (pin 1), Gate (pin 2). The metal tab is electrically connected to the Drain and must be insulated from heatsink unless system-level grounding permits.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, tied to high-side switch node or bus rail	Electrically connected to package tab; requires insulating washer if heatsink is grounded.
Source (Pin 1)	Reference node for gate drive and current return path	Low-inductance connection point for gate driver ground and sense resistor; shares common node with body diode cathode.
Gate (Pin 2)	Control terminal modulating channel conductivity	High-impedance input requiring <150 nC charge; sensitive to ESD; must be driven with low-impedance path to minimize ringing.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	8.0 mΩ enables <45 W conduction loss at 75 A, reducing heatsink size in high-current 12–48 V systems.
Fast body diode	57–86 ns reverse recovery time and 130–190 nC Q_rr support efficient synchronous rectification without external Schottky.
100% avalanche tested	Each unit validated to 140 mJ E_AS, ensuring reliability in inductive switching without external clamping.
TO-220AB mechanical robustness	Rated for 10 lbf·in mounting torque and 300°C soldering (10 s), supporting industrial reflow and manual assembly.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Rectifier

Use Scenario: High-current brushed DC motor control in industrial actuators with 24–48 V supply.

IC Role / Device Role / Timing Role: Low-side switching element in H-bridge, conducting up to 75 A continuously with PWM frequencies ≤20 kHz.

Use Value: 8.0 mΩ R_DS(on) minimizes I²R losses during stall conditions, extending thermal margin beyond 100°C ambient.

Use Scenario: Secondary-side synchronous rectification in isolated 48 V–12 V telecom DC-DC converters.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; body diode conducts during dead-time, then MOSFET conducts during on-time.

Use Value: Fast t_rr (57 ns) and low Q_rr reduce cross-conduction risk and improve efficiency by ≥1.2% vs. 40 V Schottky at 20 A.

Uninterruptible Power Supply (UPS) Inverter

High-Current Battery Protection

Use Scenario: 55 V battery-backed UPS delivering 1 kW AC output using full-bridge topology.

IC Role / Device Role / Timing Role: High-side and low-side switch in leg configuration; subjected to unclamped inductive turn-off during grid failure events.

Use Value: 140 mJ E_AS rating ensures survival of 100 µs–1 ms inductive spikes without external TVS, simplifying protection circuitry.

Use Scenario: Solid-state main disconnect in 48 V lithium-ion battery packs for EV auxiliary systems.

IC Role / Device Role / Timing Role: Bidirectional current handling (75 A continuous, 560 A pulsed) with integrated body diode enabling reverse-current fault detection.

Use Value: 560 A I_SM pulsed source rating supports short-circuit interruption within 100 µs, meeting UL 1989 requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF55	R_DS(on) = 8.5 mΩ, V_DSS = 55 V, Q_g = 120 nC, TO-220 package	Slightly higher conduction loss; lower E_AS (100 mJ) and no production avalanche testing	Acceptable where avalanche stress is absent and thermal margin allows +0.5 mΩ R_DS(on) penalty.
IXTH75N055	R_DS(on) = 7.0 mΩ, V_DSS = 55 V, Q_g = 165 nC, TO-247 package	Lower on-resistance but larger footprint and higher gate charge; R_θJC = 0.35 °C/W	Preferred for ultra-low-loss designs with space for TO-247 and stronger gate drivers; not drop-in compatible.

Compared with STP75NF55 and IXTH75N055, IRF3305 offers the best balance of proven avalanche ruggedness, industry-standard TO-220 footprint, and gate drive compatibility - making it optimal for cost-sensitive, thermally constrained, and transient-heavy applications where reliability under inductive stress is non-negotiable.

Availability

IRF3305 is available at Aetrix Electronics and suitable for motor drives, UPS inverters, synchronous rectifiers, and battery protection circuits requiring stable component supply and long-term industrial availability.

Supply support for IRF3305 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF3305 belongs to the HEXFET® Power MOSFET product line, engineered for high-current, high-ruggedness switching in industrial power conversion and motor control applications where reliability under repetitive stress is essential.

FAQ

Is IRF3305 suitable for 48 V automotive applications?

No - IRF3305 is not AEC-Q101 qualified and lacks automotive-grade screening, temperature cycling validation, or guaranteed operation above 150°C junction temperature. Its 175°C max T_J rating applies only to industrial use; automotive 48 V systems require qualified parts with extended lifetime testing and failure mode analysis.

What is the recommended gate resistor for 100 kHz switching?

A 2.6 Ω gate resistor is specified in the datasheet for 75 A switching tests (Fig. 18a). For 100 kHz operation, use 2.2–3.3 Ω to limit peak gate current to ≤3 A while maintaining <100 ns turn-on delay and minimizing overshoot, given Q_g = 125 nC typical and driver V_OH = 12–15 V.

Can IRF3305 replace IRF3205 in existing designs?

Yes - both are TO-220AB N-channel MOSFETs with identical pinout and similar V_DSS (55 V), but IRF3305 has 8.0 mΩ R_DS(on) vs. IRF3205's 8.0 mΩ (typical) - effectively identical conduction loss. However, IRF3305 offers higher E_AS (140 mJ vs. 65 mJ) and improved SOA, allowing safer operation under transient overload.

Does IRF3305 require a heatsink in 75 A continuous operation?

Yes - at 75 A and 8.0 mΩ, conduction loss is ~45 W. With R_θJC = 0.45 °C/W and R_θCS = 0.50 °C/W, even a 1.0 °C/W heatsink yields ~100°C rise above ambient. A minimum 0.5 °C/W heatsink with forced airflow is required to hold T_J ≤150°C at 25°C ambient.

IRF3305 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3650 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 330W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF3305 FAQ

1.How can I place an order for IRF3305 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3305 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3305 reliable?

The price and inventory of IRF3305 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3305 is usually 5 days.

3.What payment methods are accepted for IRF3305?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3305 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3305?

IRF3305 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3305 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3305?

For technical support, including IRF3305 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3305 requirements.

6.How does Aetrix verify that IRF3305 is sourced from the original manufacturer or authorized distributors?

All IRF3305 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3305 meets industry standards.

7.What is the process for return or replacement of IRF3305?

All IRF3305 units undergo pre-shipment inspection (PSI). If there is an issue with IRF3305, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3305 part is unused and in its original packaging.

Return procedure for IRF3305:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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