Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3305PBF

Name: IRF3305PBF
Brand: Infineon Technologies
SKU: IRF3305PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF3305PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF3305PBF.pdf

Description:: MOSFET N-CH 55V 75A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,736

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF3305PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET designed for high-current, low-voltage switching applications. It features 55 V V_DSS, 8.0 mΩ R_DS(on) at V_GS = 10 V, 75 A continuous drain current at T_C = 25°C, and TO-220AB package with integral body diode. It is used in DC-DC converters, motor drives, and power supply synchronous rectification.

For engineers reviewing the IRF3305PBF datasheet, IRF3305PBF pinout, IRF3305PBF application, or IRF3305PBF equivalent, key selection criteria include its low on-resistance for conduction loss minimization, avalanche-rated ruggedness for inductive switching, thermal performance under high-current pulsed loads, and gate charge profile for optimized driver design.

Technical Context

This MOSFET operates as a unidirectional voltage-controlled switch in the power path, with gate drive requiring ≥10 V for full enhancement and threshold voltage ranging 2.0–4.0 V. Its internal body diode supports freewheeling in buck or half-bridge topologies, with reverse recovery time of 57–86 ns and Q_rr of 130–190 nC.

Thermal management relies on junction-to-case resistance of 0.45 °C/W and case-to-sink resistance of 0.50 °C/W with greased interface. Avalanche capability is characterized by 330 mJ single-pulse energy (thermally limited) and validated repetitive performance up to 470 mJ under defined pulse conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; defines upper limit for bus voltage in 48 V systems.
R_DS(on)	8.0 mΩ @ V_GS = 10 V - Conduction loss of 45 W at 75 A; critical for thermal design in high-current DC-DC stages.
I_D (cont)	75 A @ T_C = 25°C - Package-limited current rating; derates to 47 A at T_C = 100°C per linear derating factor.
Q_g	100–150 nC - Total gate charge determines driver power and switching speed; impacts turn-on delay (16 ns) and rise time (88 ns).
E_AS	330 mJ (thermally limited) - Energy-handling capacity during unclamped inductive switching; enables robust operation in motor control.
V_SD	1.3 V @ I_S = 75 A - Forward voltage of integrated body diode; affects freewheeling losses and thermal balance in synchronous rectifiers.
C_oss	1230 pF (typ.) - Output capacitance influences hard-switching losses and resonant behavior in ZVS designs.

Pinout & Package

IRF3305PBF uses the TO-220AB package: insulated tab, vertical lead orientation, and through-hole mounting. The case is electrically connected to the Drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically connected to metal tab; requires isolation washer when mounted to heatsink unless floating design.
Source	Reference node for gate drive and current return	Low-impedance connection point for sense resistor placement and gate driver ground reference.
Gate	Control input for channel modulation	High-impedance MOS gate; sensitive to ESD and ringing; requires gate resistor (2.6 Ω typical) for controlled switching.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	8.0 mΩ enables <1 W conduction loss at 35 A, reducing heatsink requirements in 48 V battery systems.
100% avalanche tested	Each unit validated to 330 mJ single-pulse energy, ensuring reliability in inductive load switching without external snubbers.
Optimized gate charge	Q_g = 100–150 nC balances fast switching (t_r = 88 ns) with manageable driver stress in 100–500 kHz SMPS.
Enhanced body diode	Q_rr = 130–190 nC and t_rr = 57–86 ns reduce reverse recovery losses in synchronous rectification and half-bridge freewheeling.

Applications

DC-DC Buck Converter

Brushed DC Motor Drive

Use Scenario: High-efficiency 48 V to 12 V step-down converter delivering up to 60 A output.

IC Role / Device Role / Timing Role: Synchronous high-side switch with body-diode-assisted low-side conduction during dead-time.

Use Value: 8.0 mΩ R_DS(on) reduces conduction loss to ~20 W at full load, enabling compact thermal design without forced air.

Use Scenario: H-bridge driver for 36–48 V brushed motors in industrial actuators and EV auxiliary systems.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current and reverse EMF clamping via body diode.

Use Value: 330 mJ avalanche rating absorbs inductive kickback during PWM commutation, eliminating need for external TVS.

UPS Inverter Stage

Hot-Swap ORing Circuit

Use Scenario: Half-bridge inverter stage converting 48 V DC to 230 V AC in line-interactive UPS units.

IC Role / Device Role / Timing Role: Low-side switch paired with complementary high-side device; body diode conducts during dead-time and freewheeling.

Use Value: 75 A continuous rating and 560 A pulsed source current support peak surge currents during AC waveform zero-crossings.

Use Scenario: Redundant 48 V power rail ORing in telecom server shelves with automatic fault isolation.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode with forward voltage drop <10 mV at 50 A.

Use Value: Ultra-low R_DS(on) ensures <25 mW conduction loss per device, minimizing heat generation in tightly packed ORing modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF55	55 V V_DSS, 8.5 mΩ R_DS(on), TO-220FP package (lower PD rating)	Lower power dissipation (60 W vs. 95 W) limits use in sustained 75 A operation	Select if space-constrained layout favors full-pack TO-220FP and peak current <60 A.
IXTP75N055T	55 V V_DSS, 7.0 mΩ R_DS(on), TO-220 package, higher Q_g (170 nC)	Improved conduction loss but slower switching due to higher gate charge	Prefer for ultra-low-loss DC applications where switching frequency <100 kHz.

Compared with STP75NF55 and IXTP75N055T, IRF3305PBF offers optimal balance of low R_DS(on), moderate Q_g, and proven avalanche ruggedness-making it preferred for 48 V motor drives and high-current DC-DC converters operating at 200–300 kHz.

Availability

IRF3305PBF is available at Aetrix Electronics and suitable for DC-DC converters, brushed DC motor drives, and UPS inverter stages requiring stable component supply and long-term industrial availability.

Supply support for IRF3305PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with headquarters in Munich, Germany.

The IRF3305PBF belongs to the HEXFET® Power MOSFET product line, engineered for high-current, low-voltage switching in industrial power supplies, motor controls, and battery-powered systems demanding ruggedness and efficiency.

FAQ

Is IRF3305PBF RoHS-compliant and lead-free?

Yes, IRF3305PBF is RoHS-compliant and lead-free, as indicated by the "PbF" suffix in its part number. It meets EU Directive 2011/65/EU and is manufactured using lead-free plating and packaging processes verified by Infineon's material declarations.

What is the maximum safe operating temperature for continuous operation?

The IRF3305PBF has a maximum junction temperature (T_J) of +175°C and a storage temperature range of –55°C to +175°C. For reliable continuous operation, junction temperature must remain below 175°C, typically achieved with case temperature ≤100°C and proper heatsinking per R_θJC = 0.45°C/W.

Can IRF3305PBF be used in parallel configurations?

Yes, IRF3305PBF supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. Designers must match gate drive impedance, minimize layout asymmetry, and ensure uniform thermal coupling to avoid thermal runaway under high-current conditions.

Does the body diode support continuous bidirectional current flow?

No-the body diode is a parasitic p-n junction optimized for short-duration freewheeling, not continuous reverse conduction. It supports 75 A continuous source current (I_S) and 560 A pulsed source current (I_SM), but sustained reverse bias or high-frequency reverse recovery stresses require external diode supplementation in ORing or bidirectional switch applications.

IRF3305PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3650 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 330W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF3305PBF FAQ

1.How can I place an order for IRF3305PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3305PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3305PBF reliable?

The price and inventory of IRF3305PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3305PBF is usually 5 days.

3.What payment methods are accepted for IRF3305PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3305PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3305PBF?

IRF3305PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3305PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3305PBF?

For technical support, including IRF3305PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3305PBF requirements.

6.How does Aetrix verify that IRF3305PBF is sourced from the original manufacturer or authorized distributors?

All IRF3305PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3305PBF meets industry standards.

7.What is the process for return or replacement of IRF3305PBF?

All IRF3305PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3305PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3305PBF part is unused and in its original packaging.

Return procedure for IRF3305PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…