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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3315

Name: IRF3315
Brand: Infineon Technologies
SKU: IRF3315
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3315

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF3315.pdf

Description:: MOSFET N-CH 150V 27A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:8,350

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Product details

Overview

IRF3315 from Infineon Technologies is a 150 V, 48 A, 21 mΩ N-channel enhancement-mode MOSFET in TO-220AB package, designed for high-efficiency DC-DC converters and motor control power stages where low R_DS(on) and fast switching reduce conduction and switching losses. It supports continuous drain current up to 48 A at T_C = 25 °C and features 100% avalanche-rated ruggedness.

For engineers reviewing the IRF3315 datasheet, IRF3315 pinout, IRF3315 application, or IRF3315 equivalent, key selection criteria include its 150 V V_BR(DSS), 21 mΩ R_DS(on) @ V_GS = 10 V, 100% UIS-tested avalanche capability, gate charge of 97 nC, and thermal resistance R_θJC = 0.65 °C/W - all critical for hard-switched industrial power supplies and BLDC motor drives.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage operation with robust short-circuit withstand time (t_SC ≥ 10 µs at V_DD = 75 V, T_J = 150 °C). Its body diode exhibits low reverse recovery charge (Q_rr = 120 nC) and soft recovery behavior, reducing EMI in synchronous rectification topologies.

The device operates with gate threshold voltage V_GS(th) = 2.0–4.0 V and exhibits normalized R_DS(on) stability over junction temperature (1.0× at 25 °C, 1.8× at 175 °C), enabling predictable thermal design in high-ambient environments such as industrial motor drives and UPS systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	150 V - Withstands 150 V drain-to-source breakdown voltage, enabling use in 48 V and 96 V bus systems with margin.
R_DS(on) @ V_GS = 10 V	21 mΩ - Delivers low conduction loss (P_cond ≈ 0.48 W @ I_D = 15 A), critical for thermally constrained PCB layouts.
I_D (continuous, T_C = 25 °C)	48 A - Supports high-current output stages without forced air cooling in standard TO-220 heatsink configurations.
Q_G	97 nC - Determines gate driver power requirement; enables efficient switching at ≤100 kHz in hard-switched SMPS.
E_AS	470 mJ - Fully rated single-pulse avalanche energy ensures reliability during inductive load turn-off transients.
R_θJC	0.65 °C/W - Enables accurate junction temperature estimation (ΔT_J = P_D × 0.65) for thermal margining in sealed enclosures.
Body Diode t_rr	110 ns - Fast, soft reverse recovery minimizes voltage overshoot and ringing when used in synchronous buck or LLC freewheeling paths.

Pinout & Package

IRF3315 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), featuring three terminals: Source (pin 1), Gate (pin 2), Drain (pin 3 / metal tab). The package provides mechanical robustness and direct heatsinking capability via screw-mount or clip attachment.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (left)	Source	Reference node for gate drive; connects to power ground or low-side switch return path.
Pin 2 (center)	Gate	High-impedance control input requiring <97 nC charge for full enhancement; sensitive to ESD.
Pin 3 / Tab	Drain	High-voltage power output node; electrically connected to metal tab for direct heatsinking and thermal path to chassis.

Key Features

Feature	Design Value
100% Unclamped Inductive Switching (UIS) tested	Guarantees ruggedness against inductive kickback in relay drivers and solenoid controls without external snubbers.
Low gate charge (Q_G = 97 nC)	Reduces driver IC power dissipation and enables use of cost-effective 1-A gate drivers in high-volume motor inverters.
Enhanced body diode softness (Q_rr = 120 nC, t_rr = 110 ns)	Lowers EMI generation and reduces stress on gate drivers during synchronous rectification transitions.
TO-220AB with isolated drain tab	Allows mounting to grounded heat sinks without insulating hardware, simplifying thermal management in AC/DC front-ends.
Specified R_DS(on) over -55 to +175 °C	Enables stable efficiency modeling across automotive under-hood and industrial ambient temperature ranges.

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: Three-phase BLDC inverter stage operating at 20–50 kHz PWM frequency with 48 V DC bus and peak phase current up to 40 A.

IC Role / Device Role / Timing Role: Low-side power switch handling high RMS current and repetitive avalanche stress during commutation.

Use Value: 21 mΩ R_DS(on) and 470 mJ E_AS ensure minimal conduction loss and reliable fault tolerance during rotor lock conditions.

Use Scenario: Active-clamp forward or LLC resonant converter primary-side switch in 1–3 kW server power supply units.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element subjected to 150 V bus and 25 A peak drain current pulses.

Use Value: 150 V rating and 0.65 °C/W R_θJC enable compact heatsink design while maintaining <125 °C junction temperature at full load.

Solar Microinverter DC-DC Stage

UPS Inverter Half-Bridge

Use Scenario: Boost converter switching transistor interfacing PV panel (up to 120 V_OC) with battery storage system in residential microinverters.

IC Role / Device Role / Timing Role: High-efficiency unidirectional switch operating in continuous conduction mode at 60–100 kHz.

Use Value: Low Q_G/R_DS(on) ratio (≈4.6 nC/mΩ) maximizes conversion efficiency above 97% at 50% load point.

Use Scenario: Output H-bridge leg in line-interactive UPS delivering 230 VAC sine wave to critical loads during mains failure.

IC Role / Device Role / Timing Role: Hard-switched power switch enduring bidirectional current flow and high dv/dt during dead-time transitions.

Use Value: Soft-recovery body diode and 100% UIS rating prevent shoot-through failures and eliminate need for external anti-parallel diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP150N10F7	100 V V_BR(DSS), 10.5 mΩ R_DS(on), 120 A I_D, TO-220FP package (non-isolated tab)	Lower voltage rating limits use to ≤48 V systems; higher current rating suits paralleled configurations.	Select only if bus voltage remains ≤80 V and isolation from heatsink is not required.
IXTH30N150	150 V V_BR(DSS), 55 mΩ R_DS(on), 30 A I_D, TO-247 package, higher Q_G (140 nC)	Higher R_DS(on) increases conduction loss by ~2.6×; TO-247 offers better thermal performance but larger footprint.	Prefer for designs prioritizing long-term reliability over efficiency, especially in high-temperature ambient (>85 °C).

Compared with STP150N10F7 and IXTH30N150, IRF3315 uniquely balances 150 V rating, 21 mΩ on-resistance, and TO-220AB isolation - making it optimal for cost-sensitive, medium-power industrial converters where voltage margin and heatsink grounding flexibility are essential.

Availability

IRF3315 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and UPS inverters requiring stable component supply and long-lifecycle support.

Supply support for IRF3315 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and manufacturing infrastructure.

IRF3315 belongs to Infineon's legacy HEXFET® power MOSFET product line, engineered for high-voltage, high-current switching in industrial power conversion, emphasizing ruggedness, thermal stability, and ease of integration into legacy TO-220-based designs.

FAQ

What is the maximum safe operating junction temperature for IRF3315?

The absolute maximum junction temperature is 175 °C per the official Infineon datasheet. Continuous operation above 150 °C requires derating of I_D and careful thermal design using R_θJC = 0.65 °C/W and R_θJA values dependent on PCB copper area and airflow. Thermal shutdown is not built-in; external monitoring is required for safety-critical systems.

Is IRF3315 suitable for synchronous rectification in DC-DC converters?

Yes - its body diode has soft reverse recovery (t_rr = 110 ns, Q_rr = 120 nC) and low forward voltage (V_SD ≈ 1.2 V @ 10 A), enabling efficient synchronous rectification in buck and flyback topologies up to 200 kHz. However, dedicated synchronous rectifier MOSFETs offer lower Q_G and optimized diode characteristics for >500 kHz operation.

Does IRF3315 have integrated gate protection?

No - IRF3315 lacks integrated Zener clamping or gate resistor. External gate protection (e.g., 12 V Zener between gate and source, series gate resistor ≤10 Ω) is mandatory to prevent V_GS overstress from Miller-induced spikes or layout inductance, especially in high-dv/dt applications like motor drives.

Can IRF3315 be paralleled with identical units for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) ensures inherent current sharing. Use matched gate resistors (±5%), symmetrical PCB layout, and individual source resistors (10–50 mΩ) for dynamic balancing. Derate total current by 15% to account for thermal coupling and parameter spread across lots.

IRF3315 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 70mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF3315 FAQ

1.How can I place an order for IRF3315 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3315 reliable?

The price and inventory of IRF3315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3315 is usually 5 days.

3.What payment methods are accepted for IRF3315?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3315 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3315?

IRF3315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3315 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3315?

For technical support, including IRF3315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3315 requirements.

6.How does Aetrix verify that IRF3315 is sourced from the original manufacturer or authorized distributors?

All IRF3315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3315 meets industry standards.

7.What is the process for return or replacement of IRF3315?

All IRF3315 units undergo pre-shipment inspection (PSI). If there is an issue with IRF3315, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3315 part is unused and in its original packaging.

Return procedure for IRF3315:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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