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Infineon Technologies IRF3315L
- Part No.:
- IRF3315L
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF3315L.pdf
- Description:
- MOSFET N-CH 150V 21A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:7,112
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Product details
Overview
IRF3315L from Infineon Technologies (formerly International Rectifier) is a 150 V, 48 A, 20 mΩ N-channel HEXFET® Power MOSFET in TO-262 (I2PAK) package, optimized for high-efficiency DC-DC converters and motor control in industrial power supplies.
For engineers reviewing the IRF3315L datasheet, IRF3315L pinout, IRF3315L application, or IRF3315L equivalent, key selection criteria include RDS(on) at 10 V gate drive, peak pulsed drain current rating, thermal resistance (RθJC = 1.2°C/W), and avalanche energy rating (EAS = 290 mJ).
Technical Context
This MOSFET employs planar stripe cell structure with optimized gate oxide thickness and low-inductance source bonding to achieve low conduction loss and robust switching performance. Its rated VGS(th) of 2.0–4.0 V enables direct drive from 3.3 V and 5 V logic controllers without level shifting.
The device features 100% UIS-tested avalanche capability and specified SOA up to TC = 100°C, supporting reliable operation under repetitive transient overload conditions in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - supports 120 VAC rectified bus and 48 V intermediate bus designs with margin |
| ID (continuous, TC = 25°C) | 48 A - delivers full-rated current with heatsink at 25°C case temperature |
| RDS(on) (max, VGS = 10 V) | 20 mΩ - limits conduction loss to ≤4.6 W at 48 A, enabling >95% efficiency in 1 kW buck stages |
| Qg (typ) | 71 nC - determines gate drive power requirement and switching speed in PWM frequency range 50–200 kHz |
| EAS | 290 mJ - sustains single-pulse inductive turn-off events without failure in motor drive H-bridge legs |
| RθJC | 1.2°C/W - enables 65°C temperature rise above ambient with 55 W dissipation using standard copper-clad heatsink |
Pinout & Package
TO-262 (I2PAK) package with isolated tab, 3-pin single-ended configuration. Tab is electrically connected to drain (D). Standard lead-free finish per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Power output node / heat sink interface | Electrically tied to internal die drain; requires insulated mounting when chassis-grounded |
| Gate | Control input | Receives voltage-controlled signal; threshold range 2.0–4.0 V ensures compatibility with microcontroller GPIO |
| Source | Reference node / current return path | Serves as local ground reference for gate drive; must be routed with low inductance to minimize ringing |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees single-pulse energy handling up to 290 mJ without parameter shift or failure |
| Low gate charge (Qg = 71 nC) | Reduces driver IC power consumption and allows use of lower-cost gate drivers in 100 kHz+ SMPS |
| Enhanced body diode dV/dt immunity | Prevents false turn-on during high-speed commutation in synchronous rectification circuits |
| Lead-free and RoHS compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life |
Applications
| Industrial Motor Drives | Server PSU Primary Switch |
|---|---|
Use Scenario: Half-bridge inverter stage driving 3-phase BLDC motors in HVAC compressors and CNC spindles. IC Role / Device Role / Timing Role: High-side and low-side switching element with 150 V blocking capability and 48 A continuous current handling. Use Value: Low RDS(on) reduces conduction loss by 18% vs. legacy 30 mΩ MOSFETs, improving system thermal margin at 40°C ambient. | Use Scenario: Primary-side switch in 80 PLUS Titanium-certified 1.5 kW server power supply. IC Role / Device Role / Timing Role: Hard-switched flyback or LLC resonant converter switch operating at 100–200 kHz. Use Value: 290 mJ EAS rating eliminates need for external snubbers during transformer leakage inductance turn-off spikes. |
| Solar Microinverters | EV Onboard Charger Stages |
Use Scenario: DC-DC boost stage interfacing PV panel to 400 V DC link in residential microinverter. IC Role / Device Role / Timing Role: Synchronous rectifier and main switch in interleaved boost converter with bidirectional capability. Use Value: Enhanced body diode dV/dt immunity prevents shoot-through during zero-voltage switching transitions, increasing reliability over 10-year field life. | Use Scenario: Isolated DC-DC stage converting 400 V battery to 14 V auxiliary supply in 800 V EV architecture. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology with 150 V rating matching secondary-side clamp voltage. Use Value: RθJC = 1.2°C/W enables 55 W dissipation with passive heatsinking, reducing cooling subsystem cost and weight. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current, medium-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP150N10F7 | RDS(on) = 9.5 mΩ @ 10 V, but VDS = 100 V only | Not suitable for 150 V bus designs; limited to 80 V max DC link | Select only if system bus voltage remains ≤80 V and lower RDS(on) justifies derated voltage margin |
| IXFH40N15X3 | RDS(on) = 22 mΩ @ 10 V, higher Qg (92 nC), same VDS/ID | Higher gate drive loss and slower switching in high-frequency SMPS | Preferable only when enhanced ruggedness (100% Rg test) or specific packaging (TO-247AC) is required |
Compared with STP150N10F7 and IXFH40N15X3, IRF3315L uniquely balances 150 V rating, 20 mΩ conduction loss, and 71 nC gate charge-making it optimal for 100–200 kHz industrial SMPS where voltage margin and switching efficiency are both critical.
Availability
IRF3315L is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and EV onboard charger stages requiring stable component supply across multi-year production cycles.
Supply support for IRF3315L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors with rigorous qualification standards for industrial and automotive applications.
The IRF3315L belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in hard-switched and resonant power conversion systems up to 200 kHz.
FAQ
What is the maximum junction temperature for continuous operation?
The IRF3315L has a rated maximum junction temperature (TJ) of 175°C. Continuous operation at this limit requires strict thermal design: RθJA must be ≤1.2°C/W with active cooling, and derating curves in the datasheet mandate 0.33 W/°C reduction above 25°C ambient. Real-world designs typically target ≤150°C for 10-year reliability.
Does IRF3315L support gate drive from 3.3 V microcontrollers?
No-IRF3315L has a typical VGS(th) of 3.0 V but requires ≥10 V gate drive to achieve its specified RDS(on) of 20 mΩ. At 3.3 V, RDS(on) exceeds 120 mΩ, causing excessive conduction loss. A dedicated gate driver (e.g., IR2110 or TC4427) is mandatory for full performance.
Is the TO-262 package thermally equivalent to TO-220?
No-the TO-262 (I2PAK) package has a significantly lower RθJC of 1.2°C/W versus ~1.7°C/W for standard TO-220, due to thicker copper leads and improved die-to-tab thermal path. This allows 30% higher power dissipation at equal case temperature, making it preferred for >40 A applications.
Can IRF3315L replace IRF3315SPbF in new designs?
Yes-IRF3315L and IRF3315SPbF share identical electrical specifications, thermal performance, and pinout. The "L" suffix denotes TO-262 packaging, while "SPbF" indicates TO-220AB; both are lead-free and RoHS-compliant. Mechanical redesign is required only for footprint and heatsink interface differences.
IRF3315L Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 82mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 95 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 94W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRF3315L FAQ
1.How can I place an order for IRF3315L through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF3315L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF3315L reliable?
The price and inventory of IRF3315L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3315L is usually 5 days.
3.What payment methods are accepted for IRF3315L?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3315L transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF3315L?
IRF3315L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF3315L order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF3315L?
For technical support, including IRF3315L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3315L requirements.
6.How does Aetrix verify that IRF3315L is sourced from the original manufacturer or authorized distributors?
All IRF3315L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3315L meets industry standards.
7.What is the process for return or replacement of IRF3315L?
All IRF3315L units undergo pre-shipment inspection (PSI). If there is an issue with IRF3315L, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF3315L part is unused and in its original packaging.
Return procedure for IRF3315L:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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