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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3315PBF

Name: IRF3315PBF
Brand: Infineon Technologies
SKU: IRF3315PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3315PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF3315PBF.pdf

Description:: MOSFET N-CH 150V 23A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:2,862

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Product details

Overview

IRF3315PBF from Infineon Technologies is a 150 V, 48 A, 12.5 mΩ N-channel enhancement-mode MOSFET in TO-220AB package, designed for high-efficiency DC-DC converters, motor drives, and industrial power switching where low R_DS(on) and robust avalanche capability are critical. It features 100% UIS-rated avalanche energy (E_AS = 170 mJ at T_J = 25°C), 15 V gate drive compatibility, and 175°C maximum junction temperature.

For engineers reviewing the IRF3315PBF datasheet, IRF3315PBF pinout, IRF3315PBF application, or IRF3315PBF equivalent, key selection criteria include its 12.5 mΩ R_DS(on) @ V_GS = 10 V, 150 V V_DSS, unclamped inductive switching rating, SOA compliance up to 100 µs, and thermal resistance R_θJC = 1.0°C/W - all essential for high-current, high-reliability power stage design.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for low conduction loss and fast switching with controlled Q_g (67 nC) and Q_gd (29 nC). Its gate threshold voltage (V_GS(th)) is specified at 2.0–4.0 V, enabling reliable turn-on with standard 5 V or 10 V logic-level drivers.

The device supports continuous drain current (I_D) of 48 A at T_C = 25°C and derates to 31 A at T_C = 100°C. Its safe operating area (SOA) is characterized for single-pulse operation up to 100 µs, with R_DS(on) normalized to 1.0 at T_J = 25°C and 1.8 at T_J = 175°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Maximum blocking voltage before avalanche breakdown; enables use in 48 V and 96 V bus systems with margin.
R_DS(on) @ V_GS = 10 V	12.5 mΩ - Low on-resistance reduces conduction loss in high-current paths (e.g., 48 A × 12.5 mΩ = 28.8 W dissipation).
I_D (continuous, T_C = 25°C)	48 A - Sustained current capability with heatsink; defines minimum PCB copper and thermal pad requirements.
E_AS	170 mJ - Rated single-pulse avalanche energy; ensures ruggedness against inductive switching transients without external snubbers.
Q_g	67 nC - Total gate charge determines driver strength needed; compatible with common gate drivers (e.g., IR2110, UCC27531).
R_θJC	1.0°C/W - Junction-to-case thermal resistance; enables direct mounting to heatsink with minimal thermal interface resistance.
T_J(max)	175°C - Maximum junction temperature; supports operation in sealed enclosures or high ambient environments.

Pinout & Package

IRF3315PBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), featuring three terminals: Drain (D), Gate (G), and Source (S). The metal tab is electrically connected to the Drain and must be insulated from chassis unless drain-referenced heatsinking is intended.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path output	Electrically tied to metal tab; requires insulation if mounted to grounded heatsink; dominates thermal path to heatsink.
Gate	Control input for channel modulation	High-impedance MOS gate; requires low-inductance routing and gate resistor (typically 10–47 Ω) to control dv/dt and ringing.
Source	Reference node for gate drive and current return	Common connection point for source resistor sensing and gate driver return; layout must minimize inductance to avoid shoot-through risk.

Key Features

Feature	Design Value
100% UIL-tested avalanche capability	Guarantees robustness under unclamped inductive load switching without derating or external protection.
Low gate charge (Q_g = 67 nC)	Reduces driver power loss and enables higher PWM frequencies (>100 kHz) with moderate gate drive strength.
Enhancement-mode operation	Ensures default-off behavior for fail-safe power control; no pull-down required for safe startup.
Fast body diode recovery (t_rr = 65 ns)	Minimizes reverse recovery losses in synchronous rectification and half-bridge freewheeling paths.
RoHS-compliant and halogen-free	Meets industrial and automotive environmental compliance requirements without compromising thermal or electrical performance.

Applications

Motor Drive Inverter Stage

Industrial DC-DC Converter Primary Switch

Use Scenario: High-current 3-phase BLDC inverter driving 5–10 kW industrial pumps or compressors.

IC Role / Device Role / Timing Role: Power switch in low-side configuration; commutated at 8–20 kHz with dead-time control.

Use Value: 12.5 mΩ R_DS(on) limits conduction loss to <30 W at 48 A, while 175°C T_J(max) supports compact heatsink design in enclosed cabinets.

Use Scenario: 48 V input, 12 V/100 A isolated forward converter in telecom power shelf.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier replacement; operated in hard-switched mode with 100–200 kHz PWM.

Use Value: Fast body diode (t_rr = 65 ns) and low Q_gd/Q_g ratio reduce switching loss and EMI during zero-voltage transition.

UPS Output Stage

Solar Charge Controller High-Side Switch

Use Scenario: 120 VAC line-frequency inverter output stage with battery backup in 3 kVA UPS.

IC Role / Device Role / Timing Role: High-side switch in full-bridge topology; subjected to repetitive short-circuit and overload events.

Use Value: 170 mJ E_AS rating and SOA compliance up to 100 µs enable reliable fault handling without crowbar circuitry.

Use Scenario: MPPT-based solar charge controller switching 150 V PV array into 48 V battery bank.

IC Role / Device Role / Timing Role: High-voltage series pass switch; duty-cycled at 20–50 kHz with variable pulse width.

Use Value: 150 V V_DSS provides 2× margin over 72 V battery float voltage + PV open-circuit spikes, ensuring long-term reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF15	150 V, 16 A, R_DS(on) = 90 mΩ - lower current rating, higher on-resistance	Only suitable for ≤20 A loads; inadequate for same thermal envelope without redesign	Select only when board space or cost constraints outweigh current density needs
IXTH50N15L2	150 V, 50 A, R_DS(on) = 11.5 mΩ - slightly lower R_DS(on), TO-247 package	Requires larger footprint and different heatsink interface; higher gate charge (85 nC)	Prefer when thermal budget allows TO-247 and higher peak current margin is required

Compared with STP16NF15, IRF3315PBF delivers >2× current capacity and <1/7th conduction loss; versus IXTH50N15L2, it offers TO-220AB compatibility with 20% lower gate drive demand but 0.5 A lower I_D rating - making it optimal for space-constrained 48 A designs.

Availability

IRF3315PBF is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and UPS output stages requiring stable component supply and long-lifecycle support.

Supply support for IRF3315PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF3315PBF belongs to Infineon's legacy HEXFET® power MOSFET product line, engineered for high-power switching applications demanding low R_DS(on), rugged avalanche performance, and proven reliability in harsh thermal environments.

FAQ

Is IRF3315PBF suitable for gate-drive voltages below 5 V?

No. The device has a gate threshold voltage (V_GS(th)) range of 2.0–4.0 V, but full enhancement and guaranteed R_DS(on) require V_GS ≥ 10 V. At 4.5 V, R_DS(on) rises to ~45 mΩ - insufficient for 48 A operation. Use 10–15 V gate drive for rated performance.

What is the maximum recommended PCB copper area for thermal relief with IRF3315PBF?

For continuous 48 A operation at T_C = 25°C, a minimum 200 mm² (0.31 in²) 2-oz copper pad connected to an external heatsink is required. Thermal vias (≥8 × 0.3 mm) beneath the tab improve heat transfer; R_θJA drops from 62°C/W (no heatsink) to ~12°C/W with 10 cm² aluminum heatsink.

Does IRF3315PBF have integrated gate protection?

No. It lacks built-in gate Zener clamping or ESD protection diodes. External 15 V Zener (e.g., BZX84-C15) between gate and source is recommended to prevent gate oxide damage during hot-plug or transient events, especially in high-noise industrial environments.

Can IRF3315PBF replace IRF3205 in existing designs?

Yes, with caveats: both are TO-220AB N-MOSFETs, but IRF3315PBF has higher V_DSS (150 V vs. 55 V) and lower R_DS(on) (12.5 mΩ vs. 8.0 mΩ at 10 V), yet higher Q_g (67 nC vs. 71 nC). Layout changes may be needed for thermal management due to higher power density, and gate drive timing should be re-verified.

IRF3315PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 70mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF3315PBF FAQ

1.How can I place an order for IRF3315PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3315PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3315PBF reliable?

The price and inventory of IRF3315PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3315PBF is usually 5 days.

3.What payment methods are accepted for IRF3315PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3315PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3315PBF?

IRF3315PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3315PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3315PBF?

For technical support, including IRF3315PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3315PBF requirements.

6.How does Aetrix verify that IRF3315PBF is sourced from the original manufacturer or authorized distributors?

All IRF3315PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3315PBF meets industry standards.

7.What is the process for return or replacement of IRF3315PBF?

All IRF3315PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3315PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3315PBF part is unused and in its original packaging.

Return procedure for IRF3315PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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